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PREPARATION, CRYSTAL STRUCTURE, AND PROPERTIES OF NH4V3O6FPINTCHOVSKI F; SOLED S; WOLD A et al.1976; INORG. CHEM.; U.S.A.; DA. 1976; VOL. 15; NO 2; PP. 330-334; BIBL. 33 REF.Article

THERMAL CHARACTERISTICS OF THE H2SO4-H2O2 SILICON WAFER CLEANING SOLUTIONPINTCHOVSKI F; PRICE JB; TOBIN PJ et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1428-1430; BIBL. 4 REF.Article

PREPARATION, CRYSTAL STRUCTURE, AND PROPERTIES OF NH4REO1,5)F3H2OPINTCHOVSKI F; SOLED S; LAWLER RG et al.1975; INORG. CHEM.; U.S.A.; DA. 1975; VOL. 14; NO 6; PP. 1390-1394; BIBL. 30 REF.Article

The elimination of devitrification defects in antimony buried layer diffusionsALVAREZ, A. R; PINTCHOVSKI, F.Journal of the Electrochemical Society. 1984, Vol 131, Num 6, pp 1438-1440, issn 0013-4651Article

UN NOUVEAU FLUORURE DE PLATINE: PTIIPTIVF6.TRESSAUD A; PINTCHOVSKI F; LOZANO L et al.1976; MATER. RES. BULL.; U.S.A.; DA. 1976; VOL. 11; NO 6; PP. 689-694; ABS. ANGL.; BIBL. 16 REF.Article

Thermochemical and spectroscopic studies of chemically vapor-deposited amorphous silicaHUFFMAN, M; NAVROTSKY, A; PINTCHOVSKI, F. S et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 1, pp 164-171, issn 0013-4651Article

Thermochemistry and structure of low pressure chemically vapor deposited and bulk SiO2-P2O5 and SiO2-GeO2 glassesHUFFMAN, M; NAVROTSKY, A; PINTCHOVSKI, F. S et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 2, pp 431-439, issn 0013-4651Article

Redistribution of excess Si in chemical vapor deposited WSix films upon post-deposition annealingKOTTKE, M; PINTCHOVSKI, F; WHITE, T. R et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2835-2841, issn 0021-8979Article

Antimony diffusion in silicon: effects of ambient gas and timePINTCHOVSKI, F; TOBIN, P. J; KOTTKE, M et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 8, pp 1875-1883, issn 0013-4651Article

Auger electron spectroscopy and Rutherford backscattering characterization of TiNx/TiSiy contact barrier metallizationKOTTKE, M; GREGORY, R; PINTCHOVSKI, F et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 74-88, issn 0734-211XArticle

Effect of interface layer on the microstructure and electromigration resistance of Al-Si-Cu alloy on TiN/Ti substratesOLOWOLAFE, J. O; KAWASAKI, H; LEE, C. C et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2443-2445, issn 0003-6951Article

Ti/borophosphosilicate glass interfacial reactions and their effects on adhesionKOTTKE, M; TRAVIS, E. O; ROGERS, B. R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1124-1132, issn 0734-211XArticle

A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applicationsSHIH WEI SUN; TSUI, P. G. Y; SOMERO, B. M et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2733-2739, issn 0018-9383Article

A high-performance half-micrometer generation CMOS technology for fast SRAM'sHAYDEN, J. D; BAKER, F. K; PARRILLO, L. C et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 4, pp 876-886, issn 0018-9383Article

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