FLUORIDE ION CONTAMINATION AND TIO FILM MIGRATION IN THE TI-PT-AU METALLIZATION.CHRISTOU A; DAY HM.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1710-1713; BIBL. 10 REF.Article

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ETUDE DES CREUX DES FIGURES DE CORROSION AUX DISLOCATIONS DE NH₄CLO₄ DOPE AU CUIVRETOMAS DM; VIL'YAMS DO; BODDYREV VV et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 1035-1037; BIBL. 9 REF.Article

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COUCHE SUPERFICIELLE ET PUITS DE DISLOCATION DE L'ATTAQUE SUR LA FACE (100) DES CRISTAUX DE LIFZUEV LB; TOKMASHEV MG.1976; ELEKTROKHIMIYA; S.S.S.R.; DA. 1976; VOL. 12; NO 1; PP. 106-108; BIBL. 11 REF.Article

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ETCH HILLOCKS ON SELENIUM.VAISHAMPAYAN NV.1975; CURR. SCI.; INDIA; DA. 1975; VOL. 44; NO 16; PP. 581; BIBL. 2 REF.Article

THE GROWTH AND PERFECTION OF PHENANTHRENE SINGLE CRYSTALS. II. DISLOCATION ETCHING AND PLASTIC DEFORMATION.NARANG RS; SHAH BS; SHERWOOD JN et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 3; PP. 201-209; BIBL. 26 REF.Article

DISLOCATION ETCH HILLOCK FORMATION IN WHITE TIN SINGLE CRYSTALHONDA K; KIROKAWA T.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 12; PP. 1763-1774; BIBL. 21 REF.Serial Issue

OXIDATION STACKING FAULTS IN EPITAXIAL SILICON CRYSTALS.CONTI M; CORDA G; MATTEUCCI R et al.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 4; PP. 705-713; BIBL. 27 REF.Article

THERMAL ETCH PITS ON SINGLE CRYSTALS OF SILVER CHLORIDE. I. LACK OF CORRESPONDENCE WITH DISLOCATIONS.SARAN D; PARASNIS AS.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 11; PP. 725-730; BIBL. 22 REF.Article

DIE ANWENDUNG DES QUANTIMET ZUR ATZGRUBENDICHTEBESTIMMUNG AN SILIZIUM-EINKRISTALLEN = UTILISATION DU QUANTIMET POUR DETERMINER LA DENSITE DES PIQURES D'ATTAQUES DE MONOCRISTAUX DE SIHILDEBRAND H; SCHUBERT R.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1143-1151; ABS. ANGL.; BIBL. 6 REF.Serial Issue

THERMALLY ACTIVATED CROSS SLIP OF SCREW DISLOCATIONS IN GE.MOELLER HJ; HAASEN P.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. K59-K62; BIBL. 10 REF.Article

ELIMINATION OF OXIDATION-INDUCED STACKING FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS. I. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS.ROZGONYI GA; PETROFF PM; READ MH et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1725-1729; BIBL. 25 REF.Article

ETCH PITS ON TE BASAL PLANES.KALINSKI E; LEHMANN G.1976; KRISTALL U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 3; PP. 281-283; ABS. ALLEM.; BIBL. 4 REF.Article

THERMAL ETCH PITS ON SINGLE CRYSTALS OF SILVER CHLORIDE. II. MORPHOLOGY.PARASNIS AS; SARAN D; SWAMY RAO et al.1976; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1976; VOL. 14; NO 1; PP. 1-6; BIBL. 5 REF.Article

REVELATION METALLOGRAPHIQUE DES DEFAUTS CRISTALLINS DANS INP.HUBER A; LINH NT.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 80-84; ABS. ANGL.; BIBL. 20 REF.Article

ZUM EINSATZ DER QUANTITATIVEN LICHTMIKROSKOPIE BEI DER VERSETZUNGSDICHTEBESTIMMUNG VON GAAS-<100>-KRISTALLEN. = MISE EN JEU DE LA MICROSCOPIE OPTIQUE QUANTITATIVE AU COURS DE LA DETERMINATION DE LA DENSITE DE DISLOCATIONS DE CRISTAUX GAAS<100>RICHTER H; FROHLICH H.1976; KRISTALL U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 3; PP. 313-320; BIBL. 13 REF.Article

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