au.\*:("PIROUZ P")
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THIN-CRYSTAL APPROXIMATION IN STRUCTURE IMAGINGPIROUZ P.1981; ACTA CRYSTALLOGR., SECT. A, CRYST. PHYS., DIFFR., THEOR. GEN. CRYSTALLOGR.; ISSN 0567-7394; DNK; DA. 1981; VOL. 37; NO 4; PP. 465-471; BIBL. 19 REF.Article
EFFECT OF ABSORPTION ON LATTICE IMAGESPIROUZ P.1979; OPTIK; DEU; DA. 1979; VOL. 54; NO 1; PP. 69-74; ABS. GER; BIBL. 7 REF.Article
COMPUTER GENERATION OF PSEUDO-KIKUCHI PATTERNS FOR TRICLINIC CRYSTALS.PIROUZ P; BOSWARVA IM.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 2; PP. 407-415; ABS. FR.; BIBL. 8 REF.Article
On twinning and polymorphic transformations in compound semiconductorsPIROUZ, P.Scripta metallurgica. 1989, Vol 23, Num 3, pp 401-406, issn 0036-9748Article
Synchroshear transformations in laves phasesHAZZLEDINE, P. M; PIROUZ, P.Scripta metallurgica et materialia. 1993, Vol 28, Num 10, pp 1277-1282, issn 0956-716XArticle
Formation of misfit dislocations with in-plane burgers vectors in boron diffused (111) siliconNING, X. J; PIROUZ, P.Acta materialia. 1996, Vol 44, Num 5, pp 2127-2143, issn 1359-6454Article
The microstructure of SCS-6 SiC fiberNING, X. J; PIROUZ, P.Journal of materials research. 1991, Vol 6, Num 10, pp 2234-2248, issn 0884-2914Article
HIGH-RESOLUTION LATTICE IMAGING OF CADMIUM TELLURIDEYAMASHITA T; PONCE FA; PIROUZ P et al.1982; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 4; PP. 693-711; BIBL. 16 REF.Article
On diamond-hexagonal germaniumXIAO, S-Q; PIROUZ, P.Journal of materials research. 1992, Vol 7, Num 6, pp 1406-1412, issn 0884-2914Article
Brittle-to-ductile transition temperature applications and materia in InPBAYU-AJI, Leonardus B; PIROUZ, P.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 5, pp 1190-1195, issn 1862-6300, 6 p.Article
Enhanced oxygen diffusion and precipitation in siliconBERGHOLZ, W; HUTCHISON, J. L; PIROUZ, P et al.Journal of microscopy (Print). 1986, Vol 141, Num 2, pp 143-154, issn 0022-2720Article
Doping effects on indentation plasticity and fracture in germaniumROBERTS, S. G; PIROUZ, P; HIRSCH, P. B et al.Journal of materials science. 1985, Vol 20, Num 5, pp 1739-1747, issn 0022-2461Article
Stacking fault energy of 6H-SiC and 4H-SiC single crystalsHONG, M. H; SAMANT, A. V; PIROUZ, P et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2000, Vol 80, Num 4, pp 919-935, issn 1364-2804Article
HRTEM study of 1/6<411> partial dislocations in hot hardness indented GeGEIPEL, T; XIAO, S. Q; PIROUZ, P et al.Philosophical magazine letters. 1993, Vol 67, Num 4, pp 245-251, issn 0950-0839Article
Simultaneous observation of α- and β-dislocation movement and their effect on the fracture behaviour of GaAsWARREN, P. D; PIROUZ, P; ROBERTS, S. G et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1984, Vol 50, Num 5, pp L23-L28, issn 0141-8610Article
On transition temperatures in the plasticity and fracture of semiconductorsPIROUZ, P; DEMENET, J. L; HONG, M. H et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 5, pp 1207-1227, issn 1364-2804Article
On micropipes and nanopipes in SiC and GaNPIROUZ, P.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1998, Vol 78, Num 3, pp 727-736, issn 1364-2804Conference Paper
HRTEM study of a Cu/Al2O3 interfaceERNST, F; PIROUZ, P; HEUER, A. H et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1991, Vol 63, Num 2, pp 259-277, issn 0141-8610, 19 p.Article
Dislocation structures around Vickers indents in 9.4mol%Y2O3-stabilized cubic ZrO2 single crystalsHOLMES, D; HEUER, A. H; PIROUZ, P et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1993, Vol 67, Num 2, pp 325-342, issn 0141-8610Article
Platelets, dislocation loops and voidites in diamondHIRSCH, P. B; PIROUZ, P; BARRY, J. C et al.Proceedings of the royal society of London, series A : mathematical and physical sciences. 1986, Vol 407, Num 1833, pp 239-258, issn 0080-4630Article
The martensitic transformation in silicon. III, Comparison with other workPIROUZ, P; DAHMEN, U; WESTMACOTT, K. H et al.Acta metallurgica. 1990, Vol 38, Num 2, pp 329-336, issn 0001-6160Article
Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayerZHANG, Z; STAHLBUSH, R. E; PIROUZ, P et al.Journal of electronic materials. 2007, Vol 36, Num 5, pp 539-542, issn 0361-5235, 4 p.Article
A quantitative analysis of image contrast from extrinsic stacking faults = Eine quantiative Analyse des Bildkontrastes von extrinsischen StapelfehlernCOCKAYNE, D.J.H; LIU, Z; PIROUZ, P et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 425-439, issn 0031-8965Article
Chemomechanical polishing of silicon carbideZHOU, L; AUDURIER, V; PIROUZ, P et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 6, pp L161-L163, issn 0013-4651Article
The martensitic transformation in silicon. II, Crystallographic analysisDAHMEN, U; WESTMACOTT, K. H; PIROUZ, P et al.Acta metallurgica. 1990, Vol 38, Num 2, pp 323-328, issn 0001-6160Article
