CURRENT STATUS OF GROWTH PROCESSES FOR SOLAR GRADE SILICONPIZZINI S.1980; ENERGIA SOLARE E NUOVE PROSPETTIVE. COMPLES. CONFERENZA INTERNAZIONALE. 18/1979/MILANO; ITA; COSENZA: "SVILUPPO"; DA. 1980; VOL. 1; PP. 461-481; BIBL. 24 REF.Conference Paper

SOLAR GRADE SILICON AS A POTENTIAL CANDIDATE MATERIAL FOR LOW-COST TERRESTRIAL SOLAR CELLSPIZZINI S.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 6; NO 3; PP. 253-297; BIBL. 88 REF.Article

LE CELLE FOTOVOLTAICHE = THE SOLAR CELLS = LES PILES PHOTOVOLTAIQUESPIZZINI S.1982; INDUSTR. D. COSTR.; ITA; DA. 1982; VOL. 16; NO 134; PP. 22-25; ABS. ENG/FRE/GER/SPAConference Paper

SOLAR GRADE SILICON PRODUCTION FROM MG-SILICONPIZZINI S.1982; ELECTROCHEMICAL SOCIETY. SPRING MEETING. GENERAL SESSION/1982-05-09/MONTREAL PQ; USA; PENNINGTON: ELECTROCHEMICAL SOCIETY; DA. 1982; PP. 64; BIBL. 3 REF.Conference Paper

Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material : Polycrystalline SemiconductorsPIZZINI, S.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 1, pp 171-188, issn 0947-8396, 18 p.Article

Polycrystalline silicon as against amorphous silicon for photovoltaic applications: a subject for speculation and a challenge for the late 1980SPIZZINI, S.Solar cells. 1984, Vol 12, Num 1-2, pp 163-165, issn 0379-6787Article

DEPOSIZIONE DIRETTA DA FASE VAPORE DI BARRE MONOCRISTALLINE DI SILICIO PER L'IMPIEGO IN CELLE SOLARI = DIRECT DEPOSITION FROM GASEOUS PHASE OF SILICON MONOCRYSTALLINE RODS FOR USE IN SOLAR CELLS = DEPOT DIRECT A PARTIR DE LA PHASE VAPEUR DE BARRES MONOCRISTALLINES DE SILICIUM POUR LEUR UTILISATION DANS DES CELLULES SOLAIRESGIARDA L; PIZZINI S.1979; RIV. COMBUSTIBILI; ITA; DA. 1979; VOL. 33; NO 3-4; PP. 87-92; ABS. ENG; BIBL. 6 REF.Article

The role of the extended defects on the physical properties of electronic ceramicsPIZZINI, S.Materials chemistry and physics. 1989, Vol 23, Num 4, pp 349-363, issn 0254-0584Article

Solar grade silicon versus electronic grade silicon for photovoltaic applicationsPIZZINI, S.Journal of power sources. 1984, Vol 11, Num 1-2, pp 115-118, issn 0378-7753Article

A STRUCTURAL STUDY OF THE ALLOY NI₄MO OXIDIZED AT HIGH TEMPERATURES.RUEDL E; SASAKI T; PIZZINI S et al.1977; J. MIER. SPECTROSC. ELECTRON.; FR.; DA. 1977; VOL. 2; NO 6; PP. 537-552; H.T. 5; BIBL. 14 REF.Article

THE KINETICS OF OXIDATION REACTIONS AT SOLID ELECTROLYTES: INFLUENCE OF THE ELECTRODE MATERIALS ON THE SELECTIVITY OF THE ELECTRODE REACTIONPIZZINI S; MARI CM; ZANDERIGHI L et al.1976; GAZZ. CHIM. ITAL.; ITAL.; DA. 1976; VOL. 106; NO 3-6; PP. 299-308; ABS. ITAL.; BIBL. 16 REF.; (ANNU. CONGR. ITAL. ASSOC. PHYS. CHEM. 10; PADOVA; 1975)Conference Paper

GAS PHASE ELECTROCATALYTIC OXIDATION OF SO₂ BY SOLID STATE ELECTROCHEMICAL TECHNIQUEMARI CM; MOLTENI A; PIZZINI S et al.1979; ELECTROCHIM. ACTA; GBR; DA. 1979; VOL. 24; NO 7; PP. 745-750; BIBL. 8 REF.Article

ON THE EFFECTS OF BORON AND PHOSPHORUS PRIMARY IMPURITIES IN P-TYPE SILICON MATERIAL FOR SOLAR CELLSGIARDA L; PARISI A; PIZZINI S et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 726-733; BIBL. 8 REF.;_EUR-6376Conference Paper

SISTEMA CDS-CDSE: PROPRIETA ELETTRICHE E OTTICHE DELLE POLVERI PIGMENTARIE = SYSTEME CDS-CDSE: PROPRIETES ELECTRIQUES ET OPTIQUES DES POUDRES PIGMENTAIRESRUSTIONI M; BALDUCCI L; PIZZINI S et al.1979; CHIM. E INDUSTR.; ITA; DA. 1979; VOL. 61; NO 4; PP. 270-275; ABS. ENG; BIBL. 9 REF.Article

On the effect of impurities on the photovoltaic behavior of solar-grade silicon. I: The role of boron and phosphorous primary impurities in p-type single-crystal siliconPIZZINI, S; CALLIGARICH, C.Journal of the Electrochemical Society. 1984, Vol 131, Num 9, pp 2128-2132, issn 0013-4651Article

STRUCTURAL, ELECTRICAL AND ELECTROCHEMICAL CHARACTERIZATION OF NI-PR OXIDE THICK FILMS.MARI C; SCOLARI V; FIORI G et al.1977; J. APPL. ELECTROCHEM.; G.B.; DA. 1977; VOL. 7; NO 2; PP. 95-106; BIBL. 15 REF.Article

ABOUT THE USE OF NON STOICHIOMETRIC CEO₂ AS OXYGEN SENSITIVE ELECTRODE IN AN ELECTROCHEMICAL SOLID STATE OXYGEN METERMARI CM; PIZZINI S; GRAZZI R et al.1979; MATER. CHEM.; ITA; DA. 1979; VOL. 4; NO 2; PP. 123-133; BIBL. 13 REF.Article

NOVEL APPROACH TO THE OXYGEN ACTIVITY MICRODETERMINATION OF OXIDES BY EMF MEASUREMENTS.MARI CM; PIZZINI S; MANES L et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 12; PP. 1831-1836; BIBL. 16 REF.Article

ON THE INFLUENCE OF THE ANNEALING TEMPERATURE AND HEAVY CURRENT TREATMENTS ON THE POROUS STRUCTURE OF PLATINUM ELECTRODES AND ON THE KINETICS OF THE OXYGEN REACTION AT HIGH TEMPERATURESPIZZINI S; BIANCHI M; COLOMBO P et al.1973; J. APPL. ELECTROCHEM.; G.B.; DA. 1973; VOL. 3; NO 2; PP. 153-159; H.T. 4; BIBL. 10 REF.Serial Issue

PROCESS OF DEPOSITION OF SINGLE CRYSTAL DIRECTLY FROM THE VAPOUR PHASEFRANZOSI A; GIARDA L; PELOSINI L et al.1981; ; LUX; DA. 1981; EUR/7093/CEE/186-77 ESI; 21 P.-PL.; 30 CM; BIBL. 13 REF.; ENERGYReport

ADVANCED CRYSTALLIZATION TECHNIQUES OF "SOLAR GRADE" SILICONGASPARINI M; CALLIGARICH C; RAVA P et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 74-79; BIBL. 7 REF.Conference Paper

ON THE ACCURATE CALIBRATION OF AN ELECTROCHEMICAL OXYGEN METER IN THE 10^-7 BAR RANGE.MARI CM; PIZZINI S; GIORGI TA et al.1977; J. APPL. ELECTROCHEM.; G.B.; DA. 1977; VOL. 7; NO 3; PP. 215-223; BIBL. 7 REF.Article

Clustering of boron into Si(100) vicinal surfaces: a quantum mechanical study at semiempirical levelMAZZONE, A. M.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 12825-12828, issn 0953-8984, 4 p.Conference Paper

Passivation of extended defects in silicon by catalytically dissociated molecular hydrogenBINETTI, S; BASU, S; ACCIARRI, M et al.Journal de physique. III (Print). 1997, Vol 7, Num 7, pp 1487-1493, issn 1155-4320Conference Paper

Total electron yield exafs studies of (001) Au/Co monocrystalline multilayersBRIZARD, C; PIZZINI, S; REGNARD, J. R et al.Solid state communications. 1994, Vol 90, Num 3, pp 147-149, issn 0038-1098Article