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LASER EMISSION OF (ND, Y) PENTAPHOSPHATE AT 1,32 MU MKRUHLER WW; PLAETTNER RD.1979; OPT. COMMUNIC.; NLD; DA. 1979; VOL. 28; NO 2; PP. 217-220; BIBL. 11 REF.Article

SOLARZELLEN AUS AMORPHEM SILIZIUM = AMORPHOUS SILICON SOLAR CELLS = CELLULES SOLAIRES EN SILICIUM AMORPHEPLAETTNER RD; KRUEHLER WW.1980; SONNENENERGIE. SEMINAR/1980/HAMBURG; DEU; DUESSELDORF: VEREIN DEUTSCHER INGENIEURE; DA. 1980; VOL. 2; PP. 943-955; BIBL. 9 REF.Conference Paper

AMORPHES SILIZIUM - EIN NEUES HALBLEITERMATERIAL FUER SOLARZELLEN = AMORPHOUS SILICONE - A NEW SEMI-CONDUCTOR MATERIAL FOR SOLAR CELLSHEYWANG W; PLAETTNER RD.1983; METALL (BERL.); ISSN 0026-0746; DEU; DA. 1983-01; VOL. 37; NO 1; PP. 49-55; BIBL. 25 REF.Article

GLOW DISCHARGE-DEPOSITED AMORPHOUS SILICON FILMS FOR LOW-COST SOLAR CELLSGRABMAIER JG; PLAETTNER RD; STETTER W et al.1980; SIEMENS FORSCH. U. ENTWICKL.-BER.; DEU; DA. 1980; VOL. 9; NO 2; PP. 94-98; BIBL. 10 REF.Article

ON OSCILLATION AT 1.05 AND 1.32 MU M OF LIND(PO3)4 LASERS IN EXTERNAL RESONATOR AND IN RESONATOR WITH DIRECTLY APPLIED MIRRORSKRUEHLER WW; PLAETTNER RD; STETTER W et al.1979; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1979; VOL. 20; NO 4; PP. 329-334; BIBL. 22 REF.Article

COMPARISON OF OPTICAL AND ELECTRICAL PROPERTIES OF HYDROGENATED A SI FILMS FORMED BY GLOW DISCHARGE OF SIH4 OR SICL4/H2PLAETTNER RD; KROHLER WW; RAUSCHER B et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 860-866; BIBL. 15 REF.;_EUR-6376Conference Paper

THE GROWTH OF LARGE, LASER QUALITY NDXRE1-XP5O14 CRYSTALSPLAETTNER RD; KRUEHLER WW; ZWICKER WK et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 2; PP. 274-290; BIBL. 36 REF.Article

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