HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICONPOHORYLES B.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. K75-K80; BIBL. 8 REF.Article

EFFECT OF HYDROSTATIC PRESSURE ON THE PHOTOCONDUCTIVITY OF PLASTICALLY DEFORMED N-TYPE GERMANIUM.POHORYLES B; PIOTRZKOWSKI R.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 47; NO 2; PP. K115-K117; BIBL. 3 REF.Article

Tunneling transitions in silicon Schottky barriers with dislocationsPOHORYLES, B.Acta physica Polonica. A. 1987, Vol 71, Num 1, pp 43-47, issn 0587-4246Article

Driven reconstruction of dislocation cores in semiconductorsPOHORYLES, B.Philosophical magazine letters. 1988, Vol 58, Num 1, pp 1-5, issn 0950-0839Article

NEW INSIGHT INTO THE NATURE OF DISLOCATION ELECTRON STATES IN GE PROVIDED BY HYDROSTATIC PRESSURE EXPERIMENTSPOHORYLES B; JUNG J; FIGIELSKI T et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 1; PP. K87-K89; BIBL. 7 REF.Article

Surface photovoltage in plastically deformed Ge and SiPOHORYLES, B; MORAWSKI, A.Surface science. 1996, Vol 349, Num 2, pp 155-159, issn 0039-6028Article

Tunneling from dislocation cores in silicon Schottky diodesNITECKI, R; POHORYLES, B.Applied physics. A, Solids and surfaces. 1985, Vol 36, Num 1, pp 55-61, issn 0721-7250Article

Surface charge transfer in plastically deformed SiPOHORYLES, B; MORAWSKI, A.Applied surface science. 1996, Vol 92, Num 1-4, pp 417-420, issn 0169-4332Conference Paper