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DEFAUTS ETENDUS DANS LES OXYDES DES METAUX DE TRANSITIONMROWEC S.1977; ARCH. HUTN.; POLSKA; DA. 1977; VOL. 22; NO 3; PP. 405-440; ABS. ANGL.; BIBL. 2 P. 1/2Article

AMAS ORDONNES DE DEFAUTS PONCTUELS DANS LES CRISTAUXMOKIEVSKIJ VA; DOLIVO DOBROVOL'SKAYA GI.1979; ZAP. VSESOJUZ. MINERAL. OBSHCHEST.; SUN; DA. 1979; VOL. 113; NO 6; PP. 705-709; BIBL. 3 REF.Article

ANNEALING OF FATIGUED COPPER IN THE ELECTRON MICROSCOPE.GONZALEZ R; PIQUERAS J; BRU L et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. K9-K12; H.T. 4; BIBL. 13 REF.Article

ANALYTICAL APPROACH TO THE NUCLEATION AND GROWTH OF DEFECT AGGREGATES UNDER IRRADIATION.PFISTER JC.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 4; PP. 215-217; BIBL. 2 REF.Article

TOPOGRAPHIC REPRESENTATION OF MICRODEFECTS (E.G. "SWIRLS") IN NEARLY PERFECT CRYSTALS. A RESTRICTING SUPPLEMENT TO AN EARLIER CLAIMRENNINGER M.1981; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1981; VOL. 14; NO 1; PP. 59; BIBL. 3 REF.Article

RADIATION-INDUCED AGGREGATIZATION OF IMMOBILE DEFECTSKOTOMIN E; KUZOUKOV V.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 2; PP. 351-354; BIBL. 11 REF.Article

THERMODYNAMIC CHARACTERIZATION OF TERNARY COMPOUNDS. II. THE CASE OF EXTENSIVE DEFECT ASSOCIATION.SMYTH DM.1977; J. SOLID STATE CHEM.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 359-364; BIBL. 15 REF.Article

ANOMALOUS X-RAY TRANSMISSION IN DISLOCATION-FREE SILICON AFTER ELECTRON IRRADIATIONFRITSCH G; KOEHLER JS.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1859-1865; BIBL. 17 REF.Article

DISSOLUTION DES MICRODEFAUTS DANS LE SILICIUM SANS DISLOCATIONSMILEVSKIJ LS; VYSOTSKAYA VV; SIDOROV YU A et al.1980; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1980; NO 1; PP. 153-154; BIBL. 6 REF.Article

A MODEL FOR THE FORMATION OF STACKING FAULTS IN SILICON.MAHAJAN S; ROZGONYI GA; BRASEN D et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 2; PP. 73-75; BIBL. 25 REF.Article

DEFECT PROPERTIES FROM X-RAY SCATTERING EXPERIMENTS.PEISL H.1976; J. PHYS., COLLOQ.; FR.; DA. 1976 PARU 1977; PP. 47-53; ABS. FR.; BIBL. 24 REF.; (CONF. INT. DEFAUTS RESEAU CRISTAUX IONIQUES. 2; BERLIN; 1975)Conference Paper

THE KINETICS OF FORMATION AND THE PARAMETERS OF RADIATION DEFECT CLUSTERS IN SILICON.VINETSKII VL; KONDRACHUK AV.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 4; PP. 227-232; BIBL. 9 REF.Article

DEFECTS IN IMPLANTED AND CZOCHRALSKI SILICONSALISBURY IG.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 15-20; BIBL. 18 REF.Article

INFLUENCE DES CHAMPS ELASTIQUES DES DEFAUTS PONCTUELS SUR LA MOBILITE DES DISLOCATIONS DANS LE RELIEF CRISTALLINPETUKHOV BV; SUKHAREV V YA.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 4; PP. 1093-1096; BIBL. 6 REF.Article

ROLE DES IMPURETES DANS LA PRODUCTION D'AMAS DE DEFAUTS PONCTUELS DANS LES METAUX IRRADIESPECHENKIN VA; KONOVEEV YU V.1980; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1980; VOL. 50; NO 11; PP. 2442-2450; BIBL. 13 REF.Article

A NUMERICAL SOLUTION TO THE FOKKER-PLANCK EQUATION DESCRIBING THE EVOLUTION OF THE INTERSTITIAL LOOP MICROSTRUCTURE DURING IRRADIATIONGHONIEM NM; SHARAFAT S.1980; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1980; VOL. 92; NO 1; PP. 121-135; BIBL. 28 REF.Article

HIGH-RESOLUTION DIFFUSE X-RAY SCATTERING STUDY FROM NEARLY PERFECT SILICON SINGLE CRYSTALSKRISHAN LAL; BHANU PRATAP SINGH; AJITRAMVERMA et al.1979; ACTA CRYSTALLOGR., A; DNK; DA. 1979; VOL. 35; NO 2; PP. 286-295; BIBL. 29 REF.Article

THE CONFIGURATIONAL ENTROPY OF DEFECT COMPLEXES IN UO2+XMITRA SK; ALLNATT AR.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 12; PP. 2261-2275; BIBL. 24 REF.Article

ANNEALING AND CLUSTERING DEFECTS IN CASCADES.MARTYNENKO YV.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 3; PP. 129-135; BIBL. 11 REF.Article

POINT DEFECT AGGREGATES IN BORON DOPED DISLOCATION-FREE CZOCHRALSKI SILICON CRYSTALSPIMENTEL CA; BRITO FILHO BC.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 62; NO 1; PP. 129-140; BIBL. 27 REF.Article

STUDY OF POINT-DEFECT AGGREGATES IN NEARLY PERFECT SILICON SINGLE CRYSTALS USING A HIGH-RESOLUTION DIFFUSE X-RAY SCATTERING TECHNIQUEKRISHNAN LAL; BHANU PRATAP SINGH.1980; ACTA CRYSTALLOGR. SECT. A, CRYST. PHYS., DIFFR., THEOR. GEN. CRYSTALLOGR.; ISSN 0567-7394; DNK; DA. 1980; VOL. 36; NO 2; PP. 178-182; BIBL. 22 REF.Article

DIFFUSION EN DIFFRACTION AU VOISINAGE DE SITES DU RESEAU RECIPROQUE DANS LES MONOCRISTAUX DE LIF IRRADIES PAR NEUTRONSKOLONTSOVA EV; KORNEEV AE; RED'KO SV et al.1980; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1980; VOL. 25; NO 5; PP. 1099-1100; BIBL. 6 REF.Article

SWIRL DEFECTS IN SILICON SINGLE CRYSTALSCHIKAWA JI.1979; N.H.K. LAB. NOTE; JPN; DA. 1979; NO 232; 13 P.; BIBL. 36 REF.Serial Issue

ACCUMULATION DE CENTRES V ET X DANS LES CRISTAUX D'HALOGENURES ALCALINS SOUS L'ACTION DE FORTES DOSES D'IRRADIATIONOZERSKIJ V YA.1979; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; SUN; DA. 1979; NO 6; PP. 29-37; ABS. ENG; BIBL. 24 REF.Article

WECHSELWIRKUNG ZWISCHEN LEERSTELLEN UND ZINNATOMEN IM ALUMINIUMGITTER. = INTERACTION ENTRE LACUNES ET ATOMES D'ETAIN DANS LE RESEAU DE L'ALUMINIUMKIRCHGRABER G; EPPERSON JE; GEROLD V et al.1978; Z. METALLKDE; DTSCH.; DA. 1978; VOL. 69; NO 4; PP. 261-265; ABS. ANGL.; BIBL. 13 REF.Article

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