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au.\*:("POROWSKI S")

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Results 1 to 25 of 141

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INFLUENCE OF PRESSURE ON THE ELECTRON CONCENTRATION AND MOBILITY IN HGSE AT 77 K.BAJ M; POROWSKI S.1974; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1974; VOL. 6; NO 1; PP. 95-100; BIBL. 13 REF.Article

HIGH PRESSURE VAPOR GROWTH OF GANKARPINSKI J; POROWSKI S.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 56; NO 1; PP. 77-82; BIBL. 10 REF.Article

OBSERVATION OF METASTABLE DONOR STATES IN N-TYPE INSB UNDER PRESSURE.KONCZYKOWSKI M; POROWSKI S; CHROBOCZEK J et al.1974; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1974; VOL. 6; NO 1; PP. 111-114; BIBL. 4 REF.Article

HIGH MAGNETIC FIELD OBSERVATION OF THE RESONANCE DONOR STATES OF S IN INSBPOROWSKI S; KONCZEWICZ L; KOWALSKI J et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 2; PP. 657-666; ABS. FRE; BIBL. 15 REF.Article

FERROMAGNETIC RESONANCE STUDIES IN HIGH HYDROSTATIC PRESSURE.SLAWSKA WANIEWSKA A; BUJNOWSKI W; POROWSKI S et al.1977; ACTA PHYS. POLON., A; POLOGNE; DA. 1977; VOL. 51; NO 4; PP. 559-563; BIBL. 9 REF.Article

The effect of pressure on deep impurity states with large lattice relaxationPOROWSKI, S; TRZECIAKOWSKI, W.Physica status solidi. B. Basic research. 1985, Vol 128, Num 1, pp 11-22, issn 0370-1972Article

RECOVERY AND RECRYSTALLIZATION OF POLYCRYSTALLINE COPPER DURING HYDROSTATIC EXTRUSION = RESTAURATION ET RECRISTALLISATION DU CUIVRE POLYCRISTALLIN PENDANT LE FILAGE HYDROSTATIQUEPACHLA W; STYCZYNSKI L; POROWSKI S et al.1982; METAL SCIENCE; ISSN 0306-3453; GBR; DA. 1982; VOL. 16; NO 11; PP. 519-524; BIBL. 23 REF.Article

RECOVERY AND RECRYSTALLIZATION OF POLYCRYSTALLINE COPPER DURING HYDROSTATIC EXTRUSION = ERHOLUNG UND REKRISTALLISATION VON POLYKRISTALLINEM KUPFER WAEHREND HYDROSTATISCHEN STRANGPRESSENS = RESTAURATION ET RECRISTALLISATION DU CUIVRE POLYCRISTALLIN AU COURS DU FILAGE HYDROSTATIQUEPACHLA W; STYCZYNSKI L; POROWSKI S et al.1982; MET. SCI.; ISSN 0306-3453; GBR; DA. 1982-11; VOL. 16; NO 11; PP. 519-524; BIBL. 23 REF.Article

NEW PHENOMENA OF LOW TEMPERATURE RESISTIVITY ENHANCEMENT IN QUANTUM FERROELECTRIC SEMICONDUCTORSSUSKI T; TAKAOKA S; MURASE K et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 3; PP. 259-262; BIBL. 29 REF.Article

HIGH-PRESSURE EPR CAVITY.JAWORSKI M; CHENISKI K; BUJNOWSKI W et al.1978; REV. SCI. INSTRUM.; U.S.A.; DA. 1978; VOL. 49; NO 3; PP. 383-384; BIBL. 7 REF.Article

High pressure thermodynamics of GaNKARPINSKI, J; POROWSKI, S.Journal of crystal growth. 1984, Vol 66, Num 1, pp 11-20, issn 0022-0248Article

A NEW EXPLANATION OF THE CL DONOR DEIONIZATION AND ITS KINETICS OBSERVED IN CDTE: CL UNDER HYDROSTATIC PRESSURE.BAJ M; DMOWSKI L; KONCZYKOWSKI M et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 421-426; ABS. ALLEM.; BIBL. 7 REF.Article

High pressure cell for magneto-optical experimentsWASILEWSKI, Z; POROWSKI, S; STRADLING, R. A et al.Journal of physics. E. Scientific instruments. 1986, Vol 19, Num 6, pp 480-482, issn 0022-3735Article

Magneto-optical investigation of a deep centre in n-InSbWASILEWSKI, Z; STRADING, R. A; POROWSKI, S et al.Solid state communications. 1986, Vol 57, Num 2, pp 123-127, issn 0038-1098Article

GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxyGRANDJEAN, N; MASSIES, J; GRZEGORY, I et al.Semiconductor science and technology. 2001, Vol 16, Num 5, pp 358-361, issn 0268-1242Article

Studies of the deep levels in p-type InSb under pressure = Studien der tiefen Niveaus in p-InSb unter DruckALADASHVILI, D.I; KONCZEWICZ, L; POROWSKI, S et al.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp 301-308, issn 0031-8965Article

High pressure growth of GaN - new prospects for blue lasersPOROWSKI, S.Journal of crystal growth. 1996, Vol 166, Num 1-4, pp 583-589, issn 0022-0248Conference Paper

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNKARPINSKI, J; JUN, J; POROWSKI, S et al.Journal of crystal growth. 1984, Vol 66, Num 1, pp 1-10, issn 0022-0248Article

Studies of the deep levels in p-type InSb under pressureALADASHVILI, D. I; KONCZEWICZ, L; POROWSKI, S et al.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp 301-308, issn 0031-8965Article

High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowthKAMLER, G; LUCZNIK, B; PASTUSZKA, B et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3478-3481, issn 0022-0248, 4 p.Article

Chemical polishing of bulk and epitaxial GaNWEYHER, J. L; MÜLLER, S; GRZEGORY, I et al.Journal of crystal growth. 1997, Vol 182, Num 1-2, pp 17-22, issn 0022-0248Article

Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N2 pressurePOROWSKI, S; GRZEGORY, I.Journal of crystal growth. 1997, Vol 178, Num 1-2, pp 174-188, issn 0022-0248Article

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layersTURSKI, H; SIEKACZ, M; WASILEWSKI, Z. R et al.Journal of crystal growth. 2013, Vol 367, pp 115-121, issn 0022-0248, 7 p.Article

Electron spin resonance and Rashba field in GaN-based materialsWOLOS, A; WILAMOWSKI, Z; SKIERBISZEWSKI, C et al.Physica. B, Condensed matter. 2011, Vol 406, Num 13, pp 2548-2554, issn 0921-4526, 7 p.Article

High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates : Analysis of convective transportBOCKOWSKI, M; STRAK, P; KEMPISTY, P et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 259-267, issn 0022-0248, 9 p.Article

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