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Results 1 to 25 of 58401

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THE ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM ARSENIDEAMBRIDGE T; ELLIOTT CR; FAKTOR MM et al.1973; J. APPL. ELECTROCHEM.; G.B.; DA. 1973; VOL. 3; NO 1; PP. 1-15; BIBL. 16 REF.Serial Issue

MEASUREMENT OF THE MOBILITY AND CONCENTRATION OF CARRIERS IN DIFFUSED ZONES IN SI WITH A GATE CONTROLLED STRUCTURE.DARWISH MY.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 397-402; BIBL. 16 REF.Article

SCALING LAW FOR HOT-CARRIER INJECTION IN INSULATORS.SHARMA YK; SRIVASTAVA BB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 11; PP. 1214-1215; BIBL. 2 REF.Article

INFLUENCE OF DEFORMATION ON THE MOBILITY AND LIFETIMES OF CHARGE-CARRIERS IN ANTHRACENE CRYSTALSARIS FC; LEWIS TJ; THOMAS JM et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 9; PP. 913-917; ABS. FR.; BIBL. 15 REF.Serial Issue

EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue

DIE ABHAENGIGKEIT DER TRAEGERBEWEGLICHKEIT IN SILIZIUM VON DER KONZENTRATION DER FREIEN LADUNGSTRAEGER. I = LA VARIATION, EN FONCTION DE LA DENSITE DES PORTEURS DE CHARGE LIBRE, DE LA MOBILITE DES PORTEURS DANS LE SILICIUMDANNHAUSER F.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1371-1375; ABS. ANGL.; BIBL. 21 REF.Serial Issue

ZUM NACHWEIS VON MINORITAETSTRAEGER-TRAPS IN HALBLEITERN = MISE EN EVIDENCE DES PIEGES DE PORTEURS MINORITAIRES DANS LES SEMI-CONDUCTEURSLEMKE H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 539-545; ABS. ENG; BIBL. 6 REF.Article

MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS.POPESCU C; HENISCH HK.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1563-1568; BIBL. 5 REF.Article

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

MONTE-CARLO CALCULATION OF ELECTRON TRANSPORT IN POLAR SEMICONDUCTORS.AAS EJ; BLOTEKAER K.1974; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1974; VOL. 35; NO 9; PP. 1053-1059; BIBL. 13 REF.Article

THE BEHAVIOUR OF ARSENIC IN SILICON.MAGDEN IN; KALNEV NA; KONDRATEV AN et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 2; PP. 737-742; ABS. ALLEM.; BIBL. 16 REF.Article

A CARRIER TEMPERATURE MODEL SIMULATION OF A DOUBLE-DRIFT IMPATT DIODEKAFKA HJ; HESS K.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 831-834; BIBL. 9 REF.Article

THE MOBILITY OF FREE CARRIERS IN PBSE CRYSTALSSCHLICHTING U; GOBRECHT KH.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 753-758; BIBL. 11 REF.Serial Issue

CARRIER DENSITY DEPENDENCE OF MAGNETORESISTANCE IN EPITAXIAL SNTE.NISHIYAMA A.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 40; NO 2; PP. 471-477; BIBL. 22 REF.Article

FORMATION D'UN ECHELON DE CONCENTRATION ET DE CHAMP ELECTRIQUE PAR DOUBLE INJECTION DE PORTEURS CHAUDSDMITRIEV AP; STEFANOVICH AE; TSENDIN LD et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1358-1363; BIBL. 10 REF.Article

AVALANCHE INJECTION INTO THE OXIDE IN SILICON GATE-CONTROLLED DEVICES. I. THEORY.BULUCEA C.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 363-374; BIBL. 34 REF.Article

ENERGY TRANSFER BETWEEN HEATED CARRIER SYSTEMS IN A SEMICONDUCTOR BY INTER-CARRIER SCATTERING.HEARN CJ.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 64; NO 2; PP. 527-532; ABS. ALLEM.; BIBL. 7 REF.Article

SUR LE CALCUL DU COEFFICIENT DE CAPTURE DES ELECTRONS CHAUDS EN PRESENCE D'UNE BARRIERE COULOMBIENNE ET D'UNE ANISOTROPIE MAXIMALEBONCH BRUEVICH VL; KACHLISHVILI ZS.1974; VEST. MOSKOV. UNIV., 3; S.S.S.R.; DA. 1974; VOL. 28; NO 5; PP. 580-583; BIBL. 8 REF.Article

THEORY OF HOT ELECTRONS IN STRONG MAGNETIC FIELDS. IYAMADA E; KUROSAWA T.1973; J. PHYS., SOC. JAP.; JAP.; DA. 1973; VOL. 34; NO 3; PP. 603-612; BIBL. 11 REF.Serial Issue

MODIFIELD FORM OF ENERGY DISTRIBUTION FUNCTION FOR HOT CARRIERS IN POLAR SEMICONDUCTORS AT HIGH TEMPERATURES. INCLUSION OF HIGHER-ORDER TERMSSODHA MS; PHADKE UP; CHAKRAVARTI AK et al.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4879-4882; BIBL. 9 REF.Serial Issue

TFT CHARACTERISTICS WITH DISTRIBUTED TRAPS IN THE SEMICONDUCTOR. = CARACTERISTIQUES DE TRANSISTORS A COUCHES MINCES AVEC DES PIEGES REPARTIS DANS LE SEMICONDUCTEURDEMASSA TA; REFIOGLU HI.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 315-319; BIBL. 13 REF.Article

CONTACT AREA DEPENDENCE OF MINORITY-CARRIER INJECTION IN SCHOTTKY BARRIER DIODES. = VARIATION AVEC L'AIRE DE CONTACT DE L'INJECTION DE PORTEURS MINORITAIRES DANS DES DIODES A BARRIERE DE SCHOTTKYCLARKE RA; GREEN MA; SHEWCHUN J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1442-1443; BIBL. 10 REF.Article

ENERGY TRANSFER BETWEEN HEATED CARRIER SYSTEMS IN A SEMICONDUCTOR BY INTER-CARRIER SCATTERING.HEARN CJ.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 64; NO 2; PP. 527-532; ABS. ALLEM.; BIBL. 7 REF.Article

GENERATION/RECOMBINATION OF CARRIERS IN P-N JUNCTIONS.MORGAN DV; ASHBURN P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 7; PP. 85-86; BIBL. 6 REF.Article

PHOTOVOLTAIC SHORT-CIRCUIT MINORITY CARRIER INJECTION. = INJECTION DE PORTEURS MINORITAIRES DANS UN COURT-CIRCUIT PHOTOVOLTAIQUEBERRY WB.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 195-196; BIBL. 3 REF.Article

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