Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("PORTEUR CHARGE")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 48249

  • Page / 1930

Export

Selection :

  • and

EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue

INFLUENCE OF DEFORMATION ON THE MOBILITY AND LIFETIMES OF CHARGE-CARRIERS IN ANTHRACENE CRYSTALSARIS FC; LEWIS TJ; THOMAS JM et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 9; PP. 913-917; ABS. FR.; BIBL. 15 REF.Serial Issue

THE ELECTROCHEMICAL CHARACTERIZATION OF N-TYPE GALLIUM ARSENIDEAMBRIDGE T; ELLIOTT CR; FAKTOR MM et al.1973; J. APPL. ELECTROCHEM.; G.B.; DA. 1973; VOL. 3; NO 1; PP. 1-15; BIBL. 16 REF.Serial Issue

DIE ABHAENGIGKEIT DER TRAEGERBEWEGLICHKEIT IN SILIZIUM VON DER KONZENTRATION DER FREIEN LADUNGSTRAEGER. I = LA VARIATION, EN FONCTION DE LA DENSITE DES PORTEURS DE CHARGE LIBRE, DE LA MOBILITE DES PORTEURS DANS LE SILICIUMDANNHAUSER F.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1371-1375; ABS. ANGL.; BIBL. 21 REF.Serial Issue

MONTE-CARLO CALCULATION OF ELECTRON TRANSPORT IN POLAR SEMICONDUCTORS.AAS EJ; BLOTEKAER K.1974; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1974; VOL. 35; NO 9; PP. 1053-1059; BIBL. 13 REF.Article

THE MOBILITY OF FREE CARRIERS IN PBSE CRYSTALSSCHLICHTING U; GOBRECHT KH.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 753-758; BIBL. 11 REF.Serial Issue

TFT CHARACTERISTICS WITH DISTRIBUTED TRAPS IN THE SEMICONDUCTOR. = CARACTERISTIQUES DE TRANSISTORS A COUCHES MINCES AVEC DES PIEGES REPARTIS DANS LE SEMICONDUCTEURDEMASSA TA; REFIOGLU HI.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 315-319; BIBL. 13 REF.Article

GENERATION/RECOMBINATION OF CARRIERS IN P-N JUNCTIONS.MORGAN DV; ASHBURN P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 7; PP. 85-86; BIBL. 6 REF.Article

CARRIER DENSITY DEPENDENCE OF MAGNETORESISTANCE IN EPITAXIAL SNTE.NISHIYAMA A.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 40; NO 2; PP. 471-477; BIBL. 22 REF.Article

CAPTURE DES PORTEURS DANS GE P COMPENSE PAR LIGAVRILOV GM; BORODOVSKIJ YA A; LITOVCHENKO PG et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 6; PP. 1133-1137; BIBL. 21 REF.Article

A PHENOMENOLOGICAL THEORY OF DOUBLE INJECTION WITH TRAPPING.BONHAM JS.1975; AUSTRAL. J. CHEM.; AUSTRAL.; DA. 1975; VOL. 28; NO 8; PP. 1631-1641Article

CHARGE CARRIER SCATTERING BY DISLOCATIONS IN SEMICONDUCTORS.PODOR B.1975; ACTA TECH. ACAD. SCI. HUNGAR.; HONGR.; DA. 1975; VOL. 80; NO 1-2; PP. 231-236; ABS. ALLEM. RUSSE; BIBL. 18 REF.Article

CALCUL APPROCHE DE LA CINETIQUE DE RECOMBINAISON EN TENANT COMPTE DU PHENOMENE DE CAPTURE REPETEEANTONOV ROMANOVSKIJ VV.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 6; PP. 1642-1645; BIBL. 6 REF.Article

DISPOSITIF POUR LES ETUDES, A BASSES TEMPERATURES, DE LA CONCENTRATION ET DE LA MOBILITE DES PORTEURS DANS LES SEMICONDUCTEURSPEKAR GS; KHANDROS LI; SHTRUM EL et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 2; PP. 221-222; BIBL. 1 REF.Article

MEASUREMENT OF THE MOBILITY AND CONCENTRATION OF CARRIERS IN DIFFUSED ZONES IN SI WITH A GATE CONTROLLED STRUCTURE.DARWISH MY.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 397-402; BIBL. 16 REF.Article

DIE ABHAENGIGKEIT DER TRAEGERBEWEGLICHKEIT IN SILIZIUM VON DER KONZENTRATION DER FREIEN LADUNGSTRAEGER. II = LA VARIATION, EN FONCTION DE LA DENSITE DES PORTEURS DE CHARGE LIBRE, DE LA MOBILITE DES PORTEURS DANS LE SILICIUMKRAUSSE J.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1377-1381; ABS. ANGL.; BIBL. 6 REF.Serial Issue

VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERSCASEY HC JR; MILLER BI; PINKAS E et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1281-1287; BIBL. 21 REF.Serial Issue

STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS.ALMAZOV AB; PINCEVICIUS A; VISCAKAS J et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 563-569; ABS. RUSSE; BIBL. 8 REF.Article

CHANNEL ELECTRON CONDUCTION IN LASER-ANNEALED POLYCRYSTALLINE SILICON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORSHAN SHENG LEE.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 770-772; BIBL. 9 REF.Article

MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS.POPESCU C; HENISCH HK.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1563-1568; BIBL. 5 REF.Article

THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODESLEE K; NUSSBAUM A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 655-660; BIBL. 12 REF.Article

DYNAMIQUE DE CAPTURE ET DE RECOMBINAISON DES PORTEURS DANS LE PROCESSUS DE DECHARGE D'UN PHOTORECEPTEUR A SEMICONDUCTEURARKHIPOV VI; RUDENKO AI.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 8; PP. 1527-1531; BIBL. 2 REF.Article

TRANSIENT ISOTHERMAL GENERATION AT THE SILICON-SILICON OXIDE INTERFACE AND THE DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION.SIMMONS JG; MAR HA.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 369-374; BIBL. 13 REF.Article

BARRIERES DE PIEGES - RECOMBINAISON DANS LES SEMICONDUCTEURS A LARGE BANDESTAFEEV VI; EL'TSOV AV.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 5; PP. 930-932; BIBL. 2 REF.Article

CARRIER-DENSITY FLUCTUATIONS AND THE IGFET MOBILITY NEAR THRESHOLD.BREWS JR.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2193-2203; BIBL. 28 REF.Article

  • Page / 1930