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COMMENTS ON "A LINEAR-SWEEP MOS-C TECHNIQUE FOR DETERMINING MINOTORY CARRIER LIFETIMES"GRINTHAL ET; PIERRET RF.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 5; PP. 508-509Serial Issue

DUREE DE VIE EFFECTIVE DES PORTEURS DE CHARGE MINORITAIRES DANS LES MAGNETODIODESKARAKUSHAN EH I; KARAPATINTSKIJ IA; STAFEEV VI et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 7; PP. 1190-1192; BIBL. 10 REF.Article

MEASUREMENT OF THE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED SILICONMERTENS RP; VAN MEERBERGEN JL; NIJS JF et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 949-955; BIBL. 31 REF.Article

TEMPERATURE DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VAPOR-GROWN GAP.WESSELS BW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2143-2146; BIBL. 17 REF.Article

LA PHOTOCONDUCTIVITE NEGATIVE DU CARBURE DE SILICIUM INHOMOGENE DE LA MODIFICATION CUBIQUERODIONOV VN; SHAKALOV AP.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 4; PP. 695-698; BIBL. 9 REF.Article

COMPLETE COLLECTION OF MINORITY CARRIERS FROM THE INVERSION LAYER IN INDUCED JUNCTION DIODESGEIST J; LIANG F; SCHAEFER AR et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4879-4881; BIBL. 12 REF.Article

MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS UNDER ILLUMINATION.POPESCU C; HENISCH HK.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 1; PP. 47-49; BIBL. 3 REF.Article

CONTACT AREA DEPENDENCE OF MINORITY-CARRIER INJECTION IN SCHOTTKY BARRIER DIODES. = VARIATION AVEC L'AIRE DE CONTACT DE L'INJECTION DE PORTEURS MINORITAIRES DANS DES DIODES A BARRIERE DE SCHOTTKYCLARKE RA; GREEN MA; SHEWCHUN J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1442-1443; BIBL. 10 REF.Article

PHOTOVOLTAIC SHORT-CIRCUIT MINORITY CARRIER INJECTION. = INJECTION DE PORTEURS MINORITAIRES DANS UN COURT-CIRCUIT PHOTOVOLTAIQUEBERRY WB.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 195-196; BIBL. 3 REF.Article

EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article

DIFFUSION DES ELECTRONS "MARQUES" PAR LE SPIN DANS UNE HETEROSTRUCTURE DOUBLEGARBUZOV DZ; MERKULOV IA; NOVIKOV VA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 5; PP. 934-939; BIBL. 6 REF.Article

INVESTIGATION OF ESLR EFFECTS IN THE OCVD MEASUREMENT USED FOR MINORITY CARRIER LIFETIME DETERMINATION IN HIGH POWER SILICON DIODES.BASSETT RJ.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 2; PP. 145-158; BIBL. 10 REF.Article

MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 675-681; BIBL. 15 REF.Article

MINORITY CARRIER INJECTION AND EXTRACTION IN NEUTRON BOMBARDED GERMANIUMRIEDER G; MANIFACIER JC; HENISCH HK et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 133-136; BIBL. 14 REF.Article

EFFECT OF LIFETIME ON SOS CAPACITANCE MEASUREMENTSHAMMER S; FARRINGTON D; LEVIS M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 187-189; BIBL. 3 REF.Article

METHODE DIFFERENTIELLE DE MESURE DE LA DUREE DE VIE DES PORTEURS DE CHARGE MINORITAIRES DANS LES TRANSISTORS DE PUISSANCEGRIGOR'EV BI; RUDSKIJ VA; TOGATOV VV et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 4; PP. 226-228; BIBL. 4 REF.Article

TWO-DIMENSIONAL CURRENT DENSITY DISTRIBUTION WITHIN THREE-TERMINAL SEMICONDUCTOR DEVICES.SHIH PEI HU; RABINOVICI BM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 2624-2630; BIBL. 9 REF.Article

MINORY CARRIER DIFFUSION LENGTH MODIFICATION IN GAAS HOMO- AND HETEROJUNCTION SOLAR CELLSHERNANDEZ L; SEURET D; VIGIL O et al.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 1; PP. K12-K16; BIBL. 9 REF.Article

INSTRUMENT MEASURING TEMPERATURE DEPENDENCE OF MINORITY-CARRIER LIFETIME WITHOUT CONTACTOHSAWA A; HONDA K; TAKIZAWA R et al.1983; REVIEW OF SCIENTIFIC INSTRUMENTS; ISSN 0034-6748; USA; DA. 1983; VOL. 54; NO 2; PP. 210-212; BIBL. 13 REF.Article

EFFECT OF DOUBLE REFLECTION ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF A SILICON P+-S-N+ EPITAXIAL DIODERAMANAN S; KAKATI D.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 155-159; BIBL. 18 REF.Article

MINORITY-CARRIER LIFETIME IN GOLD-DIFFUSED SILICON AT HIGH CARRIER CONCENTRATIONSSCHMID W; REINER J.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6250-6252; BIBL. 9 REF.Article

MONTE CARLO MODELING OF THE TRANSPORT OF IONIZING RADIATION CREATED CARRIERS IN INTEGRATED CIRCUITSSAI HALASZ GA; WORDEMAN MR.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 211-213; BIBL. 7 REF.Article

SUR LE FONCTIONNEMENT DE COMMUTATEURS DU SYSTEME METAL-DIELECTRIQUE A TRANSPARENCE TUNNEL-JONCTION P-N EN REGIME DE LIGNE ACTIVE PULSEEMALAKHOV BA.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 3; PP. 249-252; BIBL. 8 REF.Article

MINORITY-CARRIER GENERATION IN N-INP/SIO2 CAPACITORSSTANNARD J; HENRY RL.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 86-88; BIBL. 18 REF.Article

MINORITY-CARRIER LIFETIME: CORRELATION WITH IC PROCESS PARAMETERSHUFF HR; CHIU TL.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1142-1147; BIBL. 37 REF.Article

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