COMMENTS ON "A LINEAR-SWEEP MOS-C TECHNIQUE FOR DETERMINING MINOTORY CARRIER LIFETIMES"GRINTHAL ET; PIERRET RF.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 5; PP. 508-509Serial Issue

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LA PHOTOCONDUCTIVITE NEGATIVE DU CARBURE DE SILICIUM INHOMOGENE DE LA MODIFICATION CUBIQUERODIONOV VN; SHAKALOV AP.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 4; PP. 695-698; BIBL. 9 REF.Article

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MINORITY CARRIER INJECTION IN RELAXATION SEMICONDUCTORS UNDER ILLUMINATION.POPESCU C; HENISCH HK.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 1; PP. 47-49; BIBL. 3 REF.Article

CONTACT AREA DEPENDENCE OF MINORITY-CARRIER INJECTION IN SCHOTTKY BARRIER DIODES. = VARIATION AVEC L'AIRE DE CONTACT DE L'INJECTION DE PORTEURS MINORITAIRES DANS DES DIODES A BARRIERE DE SCHOTTKYCLARKE RA; GREEN MA; SHEWCHUN J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1442-1443; BIBL. 10 REF.Article

PHOTOVOLTAIC SHORT-CIRCUIT MINORITY CARRIER INJECTION. = INJECTION DE PORTEURS MINORITAIRES DANS UN COURT-CIRCUIT PHOTOVOLTAIQUEBERRY WB.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 195-196; BIBL. 3 REF.Article

EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article

DIFFUSION DES ELECTRONS "MARQUES" PAR LE SPIN DANS UNE HETEROSTRUCTURE DOUBLEGARBUZOV DZ; MERKULOV IA; NOVIKOV VA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 5; PP. 934-939; BIBL. 6 REF.Article

INVESTIGATION OF ESLR EFFECTS IN THE OCVD MEASUREMENT USED FOR MINORITY CARRIER LIFETIME DETERMINATION IN HIGH POWER SILICON DIODES.BASSETT RJ.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 2; PP. 145-158; BIBL. 10 REF.Article

MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 675-681; BIBL. 15 REF.Article

MINORITY CARRIER INJECTION AND EXTRACTION IN NEUTRON BOMBARDED GERMANIUMRIEDER G; MANIFACIER JC; HENISCH HK et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 133-136; BIBL. 14 REF.Article

EFFECT OF LIFETIME ON SOS CAPACITANCE MEASUREMENTSHAMMER S; FARRINGTON D; LEVIS M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 187-189; BIBL. 3 REF.Article

METHODE DIFFERENTIELLE DE MESURE DE LA DUREE DE VIE DES PORTEURS DE CHARGE MINORITAIRES DANS LES TRANSISTORS DE PUISSANCEGRIGOR'EV BI; RUDSKIJ VA; TOGATOV VV et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 4; PP. 226-228; BIBL. 4 REF.Article

TWO-DIMENSIONAL CURRENT DENSITY DISTRIBUTION WITHIN THREE-TERMINAL SEMICONDUCTOR DEVICES.SHIH PEI HU; RABINOVICI BM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 2624-2630; BIBL. 9 REF.Article

MINORY CARRIER DIFFUSION LENGTH MODIFICATION IN GAAS HOMO- AND HETEROJUNCTION SOLAR CELLSHERNANDEZ L; SEURET D; VIGIL O et al.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 1; PP. K12-K16; BIBL. 9 REF.Article

MEASUREMENT OF MINORITY CARRIER LIFETIME IN GAAS AND GAAS_1-XP_X WITH AN INTENSITY-MODULATED ELECTRON BEAMPIETZSCH J.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 4; PP. 295-304; BIBL. 25 REF.Article

NEW EXPERIMENTAL EVIDENCE FOR MINORITY-CARRIER REFLECTION AT NEGATIVE-BARRIER MIS CONTACTSTARR NG; PULFREY DL; ILES PA et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 1018-1021; BIBL. 14 REF.Article

ON THE DARK CURRENTS IN GERMANIUM SCHOTTKY-BARRIER PHOTODETECTORSBUCHANAN DA; CARD HC.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 1; PP. 154-157; BIBL. 11 REF.Article

THE INFLUENCE OF ILLUMINATION ON THE MAJORITY-CARRIER QUASI-FERMI-LEVEL IN THE SCHOTTKY-BARRIER DIODEHEASELL EL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 889-895; BIBL. 11 REF.Article

THE INFLUENCE OF SURFACE PROPERTIES ON MINORITY CARRIER LIFETIME AND SHEET CONDUCTANCE IN SEMICONDUCTORSWHITE AM.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 1; PP. L1-L3; BIBL. 3 REF.Article

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ZUM NACHWEIS VON MINORITAETSTRAEGER-TRAPS IN HALBLEITERN = MISE EN EVIDENCE DES PIEGES DE PORTEURS MINORITAIRES DANS LES SEMI-CONDUCTEURSLEMKE H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 539-545; ABS. ENG; BIBL. 6 REF.Article

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A METHOD TO DETERMINE MINORITY CARRIER LIFETIME IN GAAS LIGHT-EMITTING DIODESMUELLER J; REICHL H; BERNT H et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 3; PP. 257-260; BIBL. 9 REF.Article