CHEMICAL IMPURITIES AND STRUCTURAL IMPERFECTIONS IN SEMICONDUCTOR SILICON. IHUFF HR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 89-95; BIBL. 43 REF.Article

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATION. IIELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 91-95; BIBL. 11 REF.Article

ELIMINATION DES IMPURETES MINERALES DES RESISTANCES PHOTOSENSIBLES PAR LA CATIONITE KU-2 X 8MIRONOV MS; TAUSHKANOV VP; MARKOVA TP et al.1981; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1981; VOL. 54; NO 10; PP. 2321-2323; BIBL. 3 REF.Article

CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENTO'TOOLE MM; GRANDE WJ.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 311-313; BIBL. 8 REF.Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

OPTICAL REQUIREMENTS FOR PROJECTION LITHOGRAPHYOLDHAM WG; SUBRAMANIAN S; NEUREUTHER AR et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 975-980; BIBL. 17 REF.Article

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATIONELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 5; PP. 116-120Article

PLASMA FORMATION OF BUFFER LAYERS FOR MULTILAYER RESIST STRUCTURESDOBKIN DM; CANTOS BD.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 222-224; BIBL. 10 REF.Article

MASK CONSIDERATIONS IN THE PLASMA ETCHING OF ALUMINUMTRACY CJ; MATTOX R.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 83-88; BIBL. 13 REF.Article

A DRY DEVELOPMENT MODEL FOR A POSITIVE ELECTRON BEAM RESISTYAMADA M; HATTORI S; MORITA S et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2598-2602; BIBL. 22 REF.Article

PROXIMITY FUNCTION CALCULATION OF PATTERNS IN POSITIVE ELECTRON RESISTSBRANDT J; LAI JH; SHEPHERD LT et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 5; PP. 813-822; BIBL. 12 REF.Article

Characterization of diazonaphthoquinone-novolac resin-type positive photoresist for g-line and i-line exposure using water-soluble contrast enhancement materialsENDO, M; SASAGO, M; UENO, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 565-568, issn 0734-211X, 4 p.Article

Resolution characterization of a novel silicone-based positive photoresistTANAKA, A; BAN, H; IMAMURA, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 572-575, issn 0734-211X, 4 p.Article

FACTORS AFFECTING THE SENSITIVITY OF CROSS-LINKED POSITIVE RESISTSSUZUKI M; OHNISHI Y.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 402-405; BIBL. 12 REF.Article

STUDIES OF METHACRYLONITRILE AND TRICHLOROETHYL METHACRYLATE COPOLYMERS AS ELECTRON SENSITIVE POSITIVE RESISTSLAI JH; KWIATKOWSKI JH; COOK CF JR et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 7; PP. 1596-1599; BIBL. 11 REF.Article

POLY P-SUBSTITUTED PHENYL ISOPROPENYL KETONES FOR POSITIVE PHOTORESISTSNATE K; KOBAYASHI T.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1394-1395; BIBL. 5 REF.Article

POLY(TRIFLUOROETHYL-CHLOROACRYLATE) AS A HIGHLY SENSITIVE POSITIVE ELECTRON RESISTTADA T.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1829-1830; BIBL. 6 REF.Article

EFFET DE L'ATTAQUE DES COUCHES POSITIVES ET X LORS D'UN BOMBARDEMENT PAR DES IONS D'ENERGIE MOYENNEVALIEV KA; DANILOV VA; PESHEKHONOV SV et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 3; PP. 195-199; BIBL. 8 REF.Article

DEEP U.V. HARDENING OF POSITIVE PHOTORESIST PATTERNSALLEN R; FOSTER M; YUNG TSAI YEN et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 6; PP. 1379-1381; BIBL. 9 REF.Article

SELF-ALIGNED ION IMPLANT MASKING FOR CMOS VLSI TECHNOLOGYPIMBLEY JM; GHEZZO M.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 99-100; BIBL. 7 REF.Article

DRY ETCHING DURABILITY OF POSITIVE ELECTRON RESISTSHARADA K.1981; J. APPL. POLYM. SCI.; ISSN 0021-8995; USA; DA. 1981; VOL. 26; NO 10; PP. 3395-3408; BIBL. 28 REF.Article

Electron beam resist system ― A critical review of recent developmentsWATTS, M. P. C.Solid state technology. 1984, Vol 27, Num 2, pp 111-113, issn 0038-111XArticle

Bake effects in positive photoresistBATCHELDER, T; PIATT, J.Solid state technology. 1983, Vol 26, Num 8, pp 211-217, issn 0038-111XArticle

Positive photoresist polymerization through pulsed photomagnetic curingRUGGERIO, P. A.Solid state technology. 1984, Vol 27, Num 3, pp 165-169, issn 0038-111XArticle

Design of a positive resist for projection lithography in the mid-UVWILLSON, G; MILLER, R; MCKEAN, D et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 1004-1011, issn 0032-3888Article