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WAVE MORPHOLOGIES ON THE SURFACE OF GAAS AND GA50,65)AL0,35)AS GROWN BY LPE.SMALL MB; POTEMSKI RM.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 2; PP. 163-168; BIBL. 26 REF.Article

CONTACT ANGLES BETWEEN (GAAL)AS SOLID AND SOLUTIONSPOTEMSKI RM; SMALL MB.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 62; NO 2; PP. 317-319; BIBL. 5 REF.Article

AN AUTOMATED SYSTEM FOR THE GROWTH OF MULTILAYERED STRUCTURES IN THE (GAAL) AS SYSTEM BY LPESMALL MB; BLACKWELL JC; POTEMSKI RM et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 2; PP. 253-261; BIBL. 20 REF.Article

AN EXPLANATION FOR THE PHENOMENON OF MENISCUS LINES ON THE SURFACES OF (GAAL) AS ALLOYS GROWN BY LPE.SMALL MB; BACHEM KH; POTEMSKI RM et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 39; NO 2; PP. 216-222; BIBL. 15 REF.Article

MENISCUS LINES AS NUCLEATION SITES FOR THE ACTIVE LAYER OF A DOUBLE-HETEROSTRUCTURE LASER GROWN BY LPE.SMALL MB; BLUM JM; POTEMSKI RM et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 1; PP. 42-44; BIBL. 10 REF.Article

AL DIFFUSIVITY AS A FUNCTION OF GROWTH RATE DURING THE FORMATION OF (GAAL) AS HETEROJUNCTIONS BY LIQUID PHASE EPITAXYSMALL MB; GHEZ R; REUTER W et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 814-817; BIBL. 16 REF.Article

THE FORMATION OF GA1-XALXAS LAYERS ON THE SURFACE OF GAAS DURING CONTINUAL DISSOLUTION INTO GA-AL-AS SOLUTIONSSMALL MB; GHEZ R; POTEMSKI RM et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 209-210; BIBL. 11 REF.Article

ANOMALOUS DIFFUSION BEHAVIOR OF MG IN GAASSMALL MB; POTEMSKI RM; REUTER W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1068-1070; BIBL. 14 REF.Article

MISFIT DISLOCATIONS AND THE MORPHOLOGY OF GALLIUM ALUMINUM ARSENIDE EPITAXIAL LAYERS GROWN ON GALLIUM ARSENIDEBOOYENS H; SAMLL MB; POTEMSKI RM et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4328-4329; BIBL. 14 REF.Article

THE DISSOLUTION KINETICS OF GAAS IN UNDERSATURATED ISOTHERMAL SOLUTIONS IN THE GA-AL-AS SYSTEMSMALL MB; GHEZ R; POTEMSKI RM et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1177-1182; BIBL. 20 REF.Article

A PHENOMENOLOGICAL STUDY OF MENISCUS LINES ON THE SURFACES OF GAAS LAYERS GROWN BY LPE.SMALL MB; BLAKESLEE AE; SHIH KK et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 257-266; BIBL. 17 REF.Article

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