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NEW APPLICATIONS OF THE KELVIN METHOD INVOLVING THE SCANNING OF THE BUCKING VOLTAGERITTY B; WACHTEL F; OTT F et al.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 10; PP. 1421-1423; BIBL. 9 REF.Article

SUR LA MESURE DE LA DIFFERENCE DE POTENTIEL DE CONTACTVETROV AP.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 102-105; BIBL. 6 REF.Serial Issue

ETUDE DE L'APPLICATION DE LA METHODE DE KELVIN DE MESURE DE LA DIFFERENCE DE POTENTIEL DE CONTACT A LA CARACTERISATION ELECTRONIQUE DES SURFACES DE CONDUCTEURS ET DE SEMICONDUCTEURSRITTY BERNARD.1979; ; FRA; DA. 1979; 219 P.: ILL.; 30 CM; BIBL. 54 REF.; TH. 3E CYCLE: CHIM. PHYS./MULHOUSE-STRASBOURG 1/1979Thesis

ELECTRIC CHARGE IN GAAS NATIVE OXIDES: ANNEALING CHARACTERISTICSSIEJKA J; MORAWSKI A; LAGOWSKI J et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 552-554; BIBL. 12 REF.Article

C.P.D. MEASUREMENTS ON OXIDIZED SILICON SURFACESSULI A; MICHAILOVITS L.1972; ACTA PHYS. CHEM.; HONGR.; DA. 1972; VOL. 18; NO 1-2; PP. 27-37; ABS. RUSSE; BIBL. 9 REF.Serial Issue

CORRELATION ENTRE LES PROPRIETES ELECTROPHYSIQUES DU SYSTEME SI-SIO2 ET LA CINETIQUE DE LA CROISSANCE DE LA COUCHE D'OXYDE SUR LE SILICIUMARSLAMBEKOV VA; SAFAROV A.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 1; PP. 54-60; BIBL. 16 REF.Article

PIEZOELECTRIC DRIVEN KELVIN PROBE FOR CONTACT POTENTIAL DIFFERENCE STUDIES.BESOCKE K; BERGER S.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 840-842; BIBL. 10 REF.Article

CONTACT POTENTIAL DIFFERENCES FOR III-V COMPOUND SURFACES.VAN LAAR J; HUIJSER A.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 769-772; BIBL. 15 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

FORCE BETWEEN METAL PLATES ARISING FROM THE CONTACT POTENTIALGUPTILL EW; CALKIN MG; JERICHO MH et al.1972; CANAD. J. PHYS.; CANADA; DA. 1972; VOL. 50; NO 23; PP. 2967-2969; ABS. FR.; BIBL. 4 REF.Serial Issue

MESURE DES VARIATIONS THERMOSTIMULEES D'UNE DIFFERENCE DE POTENTIEL DE CONTACTLYSENKO VS; TURCHANIKOV VI.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 3; PP. 240-243; BIBL. 10 REF.Article

CONTACT POTENTIAL DIFFERENCES IN A CHAIN OF METAL AND PLASMA CONDUCTORS.GRABOWSKI R.1974; REV. SCI. TECH. C.E.C.L.E.S./C.E.R.S.; FR.; DA. 1974; VOL. 6; NO 2; PP. 169-175; ABS. FR.; BIBL. 9 REF.Article

CONDITIONS NECESSARY TO GET MEANINGFUL MEASUREMENTS FROM THE KELVIN METHODRITTY B; WACHTEL F; MANQUENOUILLE R et al.1982; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1982; VOL. 15; NO 3; PP. 310-317; BIBL. 22 REF.Article

NEW WAYS TO MEASURE THE WORK FUNCTION DIFFERENCE IN MOS STRUCTURESKRAWCZYK SK; PRZEWLOCKI HM; JAKUBOWSKI A et al.1982; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1982; VOL. 17; NO 8; PP. 473-480; BIBL. 28 REF.Article

A CRYOSTAT FOR MEASURING CONTACT POTENTIAL DIFFERENCES.SHOTT M; WALTON AJ.1977; J. PHYS. E; G.B.; DA. 1977; VOL. 10; NO 3; PP. 226-228; BIBL. 9 REF.Article

CONTACT POTENTIALS AND BARRIER HEIGHTS IN GOLD-SILICON AND ALUMINUM-SILICON CONTACTSAHMAD K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4706-4713; BIBL. 31 REF.Serial Issue

THE WORK FUNCTION OF CARBURIZED RHENIUMPALLMER PG JR; GORDON RL; DRESSER MJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3776-3779; BIBL. 22 REF.Article

MESURE SIMULTANEE DU POTENTIEL DE CONTACT ET DE LA CONDUCTIVITE D'UN SEMICONDUCTEURKALININ AN; VEDNYJ BI.1977; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1977; NO 1; PP. 242-243; BIBL. 7 REF.Article

NIVEAUX DE CONTACT A LA LIMITE DE 2 SOUS SYSTEMES IDEAUXDARBASYAN AT; KASAMANYAN ZA.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 1; PP. 75-77; ABS. ARM. ANGL.; BIBL. 4 REF.Article

CHARGE TRANSFER FROM METAL TO DIELECTRIC BY CONTACT POTENTIAL.GARTON CG.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 13; PP. 1814-1823; BIBL. 12 REF.Article

MODIFICATION OF A ROTATING DYNAMIC CAPACITOR FOR CONTACT POTENTIAL DIFFERENCE MEASUREMENTSKURTEV I; KALITZOVA M; SIMOV S et al.1983; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1983; VOL. 16; NO 7; PP. 594-595; BIBL. 8 REF.Article

DISPERSION RELATION APPROACH TO THE X-RAY EDGE PROBLEM = APPROCHE PAR LES RELATIONS DE DISPERSION DU PROBLEME DE LA LIMITE DES RAYONS XPENN DR; GIRVIN SM; MAHAN GD et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 12; PP. 6971-6983; BIBL. 20 REF.Article

MESURES DES TENSIONS DE CONTACT SUR DES STRUCTURES SEMICONDUCTEUR-ISOLANTBUCHHEIM G.1978; EXPER. TECH. PHYS.; DDR; DA. 1978; VOL. 26; NO 5; PP. 507-520; ABS. RUS/ENG; BIBL. 14 REF.Article

CINETIQUE D'ADSORPTION DE L'OXYGENE SUR LE DIOXYDE D'ETAIN PAR DES MESURES DU TRAVAIL DE SORTIE DES ELECTRONS ET PAR THERMOGRAVIMETRIE. II: PROPRIETES ELECTRONIQUES DE LA SURFACE DE SNO2. CINETIQUE DE FIXATION DE L'OXYGENELALAUZE R; COUPUT JP; PIJOLAT C et al.1982; J. CHIM. PHYS. PHYSICOCHIM. BIOL.; ISSN 0021-7689; FRA; DA. 1982; VOL. 79; NO 9; PP. 649-653; ABS. ENG; BIBL. 6 REF.Article

BESTIMMUNG DER AUSTRITTSARBEIT VON ELEKTRODEN MIT ADSORPTIONSSCHICHTEN DURCH KONTAKTPOTENTIALMESSUNG IN DAMPFATMOSPHAERE = DETERMINATION DU TRAVAIL DE SORTIE D'ELECTRODES AVEC COUCHES ADSORBEES EN MESURANT LES DIFFERENCES DE POTENTIEL DE CONTACT SOUS ATMOSPHERE DE VAPEURVON BRADKE M.1979; D.F.V. L.R. FORSCH.-BER.; DEU; DA. 1979; NO 79-22; 205 P.; ABS. ENG; BIBL. 112 REF.Article

THERMALLY STIMULATED CONTACT POTENTIAL DIFFERENCE AS A POSSIBILITY TO DETERMINE THE ENERGY POSITION OF SEMICONDUCTOR SURFACE LEVELSVAVREK A; SIMOV S; KALITZOVA M et al.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 1; PP. 152-160; BIBL. 22 REF.Article

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