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Results 1 to 25 of 313

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DIODES DE PUISSANCE A BASE D'HETEROJONCTIONS AVEC UN DOMAINE DE BASE MODULE PAR LE RAYONNEMENT DE RECOMBINAISONKOROL'KOV VI; ROMANOVA EP; YUFEREV VS et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 9; PP. 1689-1693; BIBL. 3 REF.Article

INDICES TECHNICO-ECONOMIQUES DES SYSTEMES DE REFROIDISSEMENT DES SEMICONDUCTEURS A STRUCTURE P-N DE GRAND DIAMETREKHAZEN MM; IVANOV VI; SEMENOV GM et al.1977; ELEKTROTEKHNIKA; S.S.S.R.; DA. 1977; NO 12; PP. 25-29; BIBL. 9 REF.Article

COMPARAISON DES PARAMETRES, DES THYRISTORS ET DES DIODES DE PUISSANCE, DOPES A L'OR ET AU PLATINEASINA SS; DUMANEVICH AN; RUKHAMKIN VM et al.1979; RADIOTEKH. E EHLEKTRON.; SUN; DA. 1979; VOL. 24; NO 5; PP. 1050-1054; BIBL. 5 REF.Article

P-I-N DIODES FOR LOW-FREQUENCY HIGH-POWER SWITCHING APPLICATIONSCAULTON M; ROSEN A; STABILE PJ et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 6; PP. 875-882; BIBL. 9 REF.Article

MEDIUM POWER DIODES WITH CONTACTS FORMED BY LASER IRRADIATIONLUTHY W; WITTMER M.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 80; NO 1; PP. 96-98; BIBL. 8 REF.Article

ETUDES DE DIODES DE PUISSANCE CONSTITUEES PAR GAASALFEROV ZH I; BERGMANN YA V; KOROL'KOV VI et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 5; PP. 892-898; BIBL. 8 REF.Article

DOTIEREN VON SILIZIUM DURCHE KERNUMWANDLUNG. = LE DOPAGE DU SILICIUM PAR CONVERSION NUCLEAIREHAAS E; MARTIN J; SCHNOLLER M et al.1976; SIEMENS Z.; DTSCH.; DA. 1976; VOL. 50; NO 7; PP. 509-512; BIBL. 8 REF.Article

COMMENT CHOISIR UNE DIODE RAPIDE.PETER JM; MAURICE B.1977; CAH. TECH. SESCOSEM-INFORM.; FR.; DA. 1977; NO 5; PP. 16-20; BIBL. 5 REF.Article

COMPUTER AIDED DESIGN OF ELECTRONIC CIRCUITS USING SINGLE TERM WALSH SERIESSUBBAYYAN R; MUHAMMAD ZAKARIAH K.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 1; PP. 161-165; BIBL. 7 REF.Article

INTERACTION OF HIGH POWER P-I-N DIODES AND DRIVING CIRCUIT DURING FORWARD-BIAS SWITCHING.GEORGOPOULOS CJ.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 295-302; BIBL. 11 REF.Article

SILICON TECHNOLOGYSPENKE E.1979; Z. WERKSTOFFTECH.; DEU; DA. 1979; VOL. 10; NO 8; PP. 262-275; ABS. GER; BIBL. 30 REF.Article

HIGH POWER GAAS IMPATT DIODES.KOBAYASHI K; HIRACHI Y; TOYAMA Y et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 3; PP. 107-119; BIBL. 1 P.Article

FAST POWER DIODES AND THYRISTORSRAMSBOTTOM MJ.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 4; PP. 27-40; (8 P.)Article

FREQUENCY INCREASE IN PULSED AVALANCHE DIODESSTATZ H; WALLAGE RN.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1064-1067; BIBL. 8 REF.Article

THE ADMITTANCE BEHAVIOR OF LOW-HIGH-LOW GAAS SCHOTTKY IMPATT DIODESEKNOYAN O; KEMERLEY RT; HOURANI SM et al.1979; I.E.E.E. TRANS. COMPON. HYBRIDS MANUFG TECHNOL.; USA; DA. 1979; VOL. 2; NO 2; PP. 254-257; BIBL. 9 REF.Article

THERMAL DESIGN OF MICROWAVE PIN DIODESCHATURVEDI PK; RAMAMURTHI V; KAKATI D et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 129-134; BIBL. 14 REF.Article

LA PLUS GRANDE DIODE DE PUISSANCE ET SES APPLICATIONSMEYFTAH RAGAMA; BERNER M.1979; REV. BROWN BOVERI; CHE; DA. 1979; VOL. 66; NO 7; PP. 495-498; BIBL. 8 REF.Article

THYRIBLOC, RECTIBLOC: REDRESSEURS A SEMI-CONDUCTEUR DE GRANDE PUISSANCE REFROIDIS PAR EAUSPATNY W.1978; REV. BROWN BROVERI; CHE; DA. 1978; VOL. 65; NO 9; PP. 624-626; BIBL. 2 REF.Article

EVALUATION DE LA FIABILITE DES DIODES DE PUISSANCE AU SILICIUM FONCTIONNANT EN REGIME DE CHARGE CYCLIQUEBARDIN SM; BARDIN VM.1978; IZVEST. VYSSH. UCHEBN. ZAVED., ELEKTROMEKH.; SUN; DA. 1978; NO 10; PP. 1136-1138; BIBL. 8 REF.Article

IMPROVEMENTS IN SCHOTTKY POWER DIODESWAGGIT RC.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 610; PP. 42-43Article

MEASUREMENT OF CHARGE-CARRIER BEHAVIOUR IN PIN DIODES USING A LASER TECHNIQUECOOPER RW; PAXMAN DH.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 865-869; BIBL. 8 REF.Article

HOEHERE BELASTBARKEIT VON HALBLEITER-LEISTUNGSDIODEN. = CAPACITE DE CHARGE ACCRUE DES DIODES DE PUISSANCE A SEMI-CONDUCTEURSBATZIES P; HAAS H.1977; B.B.C. NACHR.; DTSCH.; DA. 1977; VOL. 59; NO 2; PP. 78-82; BIBL. 5 REF.Article

CAPTEURS A SEMICONDUCTEURS DU ZERO D'INTENSITE, POUR CONVERTISSEURS D'ENERGIE ELECTRIQUE A THYRISTORSCHAUSOV OG; SIDOROVA NN; FEOKTISTOV VP et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., ELEKTROMEKH.; S.S.S.R.; DA. 1977; NO 4; PP. 401-405; BIBL. 5 REF.Article

OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradientBENDA, V; CERNIK, M; PAPEZ, V et al.Microelectronics journal. 2006, Vol 37, Num 3, pp 217-222, issn 0959-8324, 6 p.Conference Paper

Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode designCOVA, P; MENOZZI, R; PORTESINE, M et al.Microelectronics journal. 2006, Vol 37, Num 5, pp 409-416, issn 0959-8324, 8 p.Article

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