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ELECTRON TRANSPORT PROPERTIES IN GAAS AT HIGH ELECTRIC FIELDSPOZELA J; REKLAITIS A.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 927-933; BIBL. 20 REF.Article

DIFFUSION COEFFICIENT OF HOT ELECTRONS IN GAASPOZELA J; REKLAITIS A.1978; SOLID STATE COMMUNIC.; USA; DA. 1978; VOL. 27; NO 11; PP. 1073-1077; BIBL. 26 REF.Article

NEGATIVE DIFFERENTIAL CONDUCTIVITY IN HYDROSTATICALLY PRESSED INDIUM ANTIMONIDE AT ROOM TEMPERATUREDOBROVOLSKIS Z; KROTKUS A; POZELA J et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 1; PP. K73-K75; BIBL. 8 REF.Article

MONTE CARLO CALCULATIONS OF HOT-ELECTRON TRANSIENT BEHAVIOUR IN CDTE AND GAAS.MATULIONIS A; POZELA J; REKLAITIS A et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 1; PP. 43-48; ABS. RUSSE; BIBL. 11 REF.Article

HOT ELECTRON VELOCITY CORRELATION AND DIFFUSION IN A MANY LAYERED HETEROSTRUCTUREMATULIONIS A; POZELA J; STARIKOV E et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K149-K152; BIBL. 5 REF.Article

MEASUREMENT OF THE ELECTRON DRIFT VELOCITY IN INSB UP TO FIELDS OF 800V/CM IN THE PRESENCE OF IMPACT IONIZATION.DARGYS A; SEDRAKYAN R; POZELA J et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 387-392; ABS. RUSSE; BIBL. 24 REF.Article

DRIFT VELOCITY OSCILLATIONS IN N-GAAS AT 77 K.MATULIONIS A; POZELA J; REKLAITIS A et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 83-87; ABS. RUSSE; BIBL. 15 REF.Article

MONTE CARLO TREATMENT OF ELECTRON-ELECTRON COLLISIONS.MATULIONIS A; POZELA J; REKLAITIS A et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 10-11; PP. 1133-1137; BIBL. 11 REF.Article

CURRENT-VOLTAGE CHARACTERISTICS OF INSB AT ROOM TEMPERATURE AND HIGH HYDROSTATIC PRESSUREDOBROVOLSKIS Z; KROTKUS A; POZELA J et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. 689-696; ABS. GER; BIBL. 29 REF.Article

Electron-optical phonon scattering rates in 2D structures: effects of independent electron and phonon confinementPOZELA, J; BUTKUS, G; JUCIENE, V et al.Semiconductor science and technology. 1994, Vol 9, Num 8, pp 1480-1483, issn 0268-1242Article

Confined electron-optical phonon scattering rates in 2D structures containing electron and phonon wallsPOZELA, J; JUCIENE, V; POZELA, K et al.Semiconductor science and technology. 1995, Vol 10, Num 8, pp 1076-1083, issn 0268-1242Article

Reduction of electron-optical phonon scattering rates in a quantum well with a phonon wallPOZELA, J; JUCIENE, V; POZELA, K et al.Semiconductor science and technology. 1995, Vol 10, Num 12, pp 1555-1560, issn 0268-1242Article

Collective electron interaction in double-barrier GaAs structuresGRUZINSKIS, V; MICKEVICIUS, R; POZELA, J et al.Europhysics letters (Print). 1988, Vol 5, Num 4, pp 339-341, issn 0295-5075Article

An electronic technique for measuring phase space dimension from chaotic time seriesNAMAJUNAS, A; POZELA, J; TAMASEVICIUS, A et al.Physics letters. A. 1988, Vol 131, Num 2, pp 85-90, issn 0375-9601Article

Period multiplying and chaotic response in driven n-Ge with repulsive defect centresBUMELIENE, S; POZELA, J; TAMASEVICIUS, A et al.Physica status solidi. B. Basic research. 1986, Vol 134, Num 1, pp K71-K74, issn 0370-1972Article

Quantitative characterization of chaotic instabilities in semiconductorsPOZELA, J; NAMAJUNAS, A; TAMASEVICIUS, A et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 2, pp 181-188, issn 0721-7250Article

Semiconductor nondestructive testing by helicon wavesLAURINAVICIUS, A; MALAKAUSKAS, P; POZELA, J et al.International journal of infrared and millimeter waves. 1987, Vol 8, Num 5, pp 573-582, issn 0195-9271Article

Hot electron transport in heterostructuresPOZELA, J; POZELA, K; JUCIENE, V et al.Semiconductor science and technology. 2011, Vol 26, Num 1, issn 0268-1242, 014025.1-014025.5Article

Interaction of terahertz radiation with surface and interface plasmon―phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructuresPOZELA, J; POZELA, K; SILENAS, A et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 110, Num 1, pp 153-156, issn 0947-8396, 4 p.Article

Conductivity of modulation-doped AlGaAs/GaAs/AlGaAs quantum well with an inserted thin AlAs barrierPOZELA, K; POZELA, J; JUCIENË, V et al.Nanotechnology (Bristol. Print). 2001, Vol 12, Num 4, pp 566-569, issn 0957-4484Conference Paper

A new method for quantitative characterization of chaotic oscillations in semiconductorsCENYS, A; NAMAJUNAS, A; POZELA, J et al.Acta physica Polonica. A. 1988, Vol 73, Num 3, pp 365-368, issn 0587-4246Article

Length dependent hot electron noise in doped GaAsBAREIKIS, V; LIBERIS, J; MATULIONIS, A et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1647-1650, issn 0038-1101Conference Paper

Electron-phonon interaction in 2D heterostructuresPOZELA, J; POZELA, K.SPIE proceedings series. 2004, pp 369-376, isbn 0-8194-5324-2, 8 p.Conference Paper

Graded-gap AlxGa1-xAs X-ray detectors with fast photovoltaic responseSILENAS, A; POZELA, J; POZELA, K et al.Materials science forum. 2002, pp 287-290, issn 0255-5476, isbn 0-87849-890-7Conference Paper

The graded-gap AlxGa1-xAs X-ray detectors with high and fast photovoltaic responsePOZELA, J; SILENAS, A; POZELA, K et al.SPIE proceedings series. 2002, pp 158-162, isbn 0-8194-4500-2, 2VolConference Paper

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