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Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Thermal oxidation of high dose aluminum implanted siliconIACONA, F; RAINERI, V; LA VIA, F et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 7, pp 2762-2765, issn 0013-4651Article

Titanium silicide as a diffusion source for phosphorus : precipitation and activationPRIVITERA, V; LA VIA, F; SPINELLA, C et al.Applied surface science. 1991, Vol 53, pp 190-195, issn 0169-4332Conference Paper

Growth of aligned CNx nanocolumns on silicon by RF-magnetron sputteringSCALESE, S; SCUDERI, V; SIMONE, F et al.Carbon (New York, NY). 2006, Vol 44, Num 14, pp 3123-3126, issn 0008-6223, 4 p.Article

Clustering of ultra-low-energy implanted boron in silicon during activation annealingSCHROER, E; PRIVITERA, V; PRIOLO, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 219-223, issn 0921-5107Conference Paper

Three-dimensional concentration profiles of hybrid diffusers in crystalline siliconCOFFA, S; PRIVITERA, V; FRISINA, F et al.Journal of applied physics. 1993, Vol 74, Num 1, pp 195-200, issn 0021-8979Article

Arsenic redistribution and out-diffusion in TiSi2-Si bilayered structuresLA VIA, F; PRIVITERA, V; RIMINI, E et al.Semiconductor science and technology. 1990, Vol 5, Num 8, pp 831-835, issn 0268-1242Article

Insulator-metal transition in biased finite polyyne systemsLA MAGNA, A; DERETZIS, I; PRIVITERA, V et al.The European physical journal. B, Condensed matter physics (Print). 2009, Vol 70, Num 3, pp 311-316, issn 1434-6028, 6 p.Article

Two-dimensional distributions of ions implanted in channeling and random directions of Si single crystalsPRIVITERA, V; RAINERI, V; RIMINI, E et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2370-2377, issn 0021-8979Article

Lateral straggling of B and P ions implanted in channeling and random directions of Si single crystalsRAINERI, V; PRIVITERA, V; RIMINI, E et al.Applied physics letters. 1992, Vol 61, Num 10, pp 1190-1192, issn 0003-6951Article

Stress-induced precipitation of dopants diffused into Si from TiSi2 and CoSi2 implanted layersLA VIA, F; PRIVITERA, V; SPINELLA, C et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1196-1203, issn 0268-1242Article

A spreading resistance-based technique for two-dimensional carrier profilingPRIVITERA, V; VANDERVORST, W; CLARYSSE, T et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 1, pp 262-270, issn 0013-4651Article

Metallic cluster photoemission = Photoémission d'amas métalliquesFARACI, G; PENNISI, A. R; PRIVITERA, V et al.Physica scripta (Print). 1988, Vol 37, Num 5, pp 728-729, issn 0031-8949Article

Photoemission from small particles of Ag and Au = Photoémission de petites particules de Ag et AuFARACI, G; PENNISI, A. R; PRIVITERA, V et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 18, pp 10542-10546, issn 0163-1829Article

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopySANSON, A; NAPOLITANI, E; IMPELLIZZERI, G et al.Thin solid films. 2013, Vol 541, pp 76-82, issn 0040-6090, 7 p.Conference Paper

Excimer Laser annealing for shallow junction formation in Si power MOS devicesFORTUNATO, G; PRIVITERA, V; SIMON, F et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 2-6, issn 0040-6090, 5 p.Conference Paper

Identification of hydrogen related defects in proton implanted float-zone siliconLEVEQUE, P; HALLEN, A; SVENSSON, B. G et al.EPJ. Applied physics (Print). 2003, Vol 23, Num 1, pp 5-9, issn 1286-0042, 5 p.Conference Paper

Titanium silicide as a diffusion source for arsenicPRIVITERA, V; LA VIA, F; RIMINI, E et al.Journal of applied physics. 1990, Vol 67, Num 11, pp 7174-7176, issn 0021-8979, 3 p.Article

Direct observation of the formation of linear C chain/carbon nanotube hybrid systemsSCUDERI, V; SCALESE, S; BAGIANTE, S et al.Carbon (New York, NY). 2009, Vol 47, Num 8, pp 2134-2137, issn 0008-6223, 4 p.Article

Ex situ and in situ catalyst deposition for CNT synthesis by RF-magnetron sputteringSCALESE, S; SCUDERI, V; SIMONE, F et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 7, pp 2243-2246, issn 1386-9477, 4 p.Conference Paper

Damage profiles determination in ultra-shallow B+ implanted Si by triple crystal X-ray diffraction and transmission electron microscopyBOCCHI, C; GERMINI, F; MUKHAMEDZHANOV, E. Kh et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 457-461, issn 0921-5107Conference Paper

Mechanisms of dopant redistribution and retention in Silicon following ultra-low energy Boron implantation and excimer laser annealingMARIUCCI, L; FORTUNATO, G; WHELAN, S et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 595-598, isbn 88-900847-8-2, 4 p.Conference Paper

High-energy proton radiation induced defects in tin-doped n-type siliconSIMOEN, E; CLAEYS, C; PRIVITERA, V et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 477-480, issn 0921-4526Conference Paper

Rapid thermal processing reliability of titanium silicide implanted with arsenic, boron and phosphorusLA VIA, F; PRIVITERA, V; RIMINI, E et al.Applied surface science. 1991, Vol 53, pp 377-382, issn 0169-4332Conference Paper

Morphology and distribution of carbon nanostructures in a deposit produced by arc discharge in liquid nitrogenSCALESE, S; SCUDERI, V; BAGIANTE, S et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 6, pp 1005-1008, issn 1386-9477, 4 p.Conference Paper

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