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Recombination dynamics and the fitness landscapeBERGMAN, A; FELDMAN, M. W.Physica. D. 1992, Vol 56, Num 1, pp 57-67, issn 0167-2789Article

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Vacancy-interstitial recombination coefficients in radiation-induced growth models = Leerstellen-Zwischengitteratom-Rekombinationskoeffizienten in strahlungsinduzierten WachstumsmodellenKIDSON, G.V.Journal of nuclear materials. 1983, Vol 118, Num 1, pp 115-120, issn 0022-3115Article

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The average distance between mg-based trapping structures in LiF :Mg, Ti and LiF :Mg, Cu, P and the relevance to microdosimetryHOROWITZ, Y. S.Radiation protection dosimetry. 1999, Vol 82, Num 1, pp 51-54, issn 0144-8420Article

Coupling and ergodic theorems for Fleming-Viot processesETHIER, S. N; KURTZ, T. G.Annals of probability. 1998, Vol 26, Num 2, pp 533-561, issn 0091-1798Article

Improvement of interface properties in μc-SiC/poly-Si/μc-Si double heterojunction solar cellMA, W; OKAMOTO, H; HAMAKAWA, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 2A, pp 640-643, issn 0021-4922, 1Article

New oxygen-induced recombination centres in 600 to 800⁰C heat-treated silicon = Neue Sauerstoff-induzierte Rekombinationszentren in Silizium, das bei 600 bis 800⁰C waermebehandelt wurdeBORIMSKII, V.V; GLINCHUK, K.D; LITOVCHENKO, N.M et al.Physica status solidi. A. Applied research. 1984, Vol 84, Num 1, pp 237-241, issn 0031-8965Article

The isovalent doping effect on recombination-stimulated degradation processes of photodevices based on A₃B₅ semiconductorsALIBEKOV, S. A; OKSENGENDLER, B. L; ISLAMOV, S. A et al.Applied solar energy. 2001, Vol 37, Num 2, pp 69-72, issn 0003-701XArticle

Influence of plasma resistance and fluctuation on probe characteristics in detached recombining plasmasOHNO, N; TANAKA, N; EZUMI, N et al.Contributions to plasma physics (1985). 2001, Vol 41, Num 5, pp 473-480, issn 0863-1042Conference Paper

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Surface recombination via interface defects in field effect transistorsBENDADA, E; RAÏS, K; MIALHE, P et al.Active and passive electronic components. 1998, Vol 21, Num 1, pp 61-71, issn 0882-7516Article

The effect of dislocations on the charge-carrier recombination processes in irradiated silicon = Der Einfluss von Versetzungen auf die Ladungstraeger-Rekombinationsprozesse in bestrahltem SiliziumKAZAKEVICH, L.A; LUGAKOV, P.F; FILIPPOV, I.M et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 511-518, issn 0031-8965Article

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