ECHAUFFEMENT DES ELECTRONS AU VOISINAGE DES CONTACTS ET DYNAMIQUE DES DOMAINES DANS LES DIODES GUNN COURTESKAL'FA AA; KONOPLYANNIKOV SN; PORESH SB et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1359-1362; BIBL. 6 REF.Article

A MODEL OF THE P-N JUNCTION WITH EXPONENTIAL DOPING PROFILEPERDOMINI A; GISLON R.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 2; PP. 145-159; BIBL. 9 REF.Serial Issue

MODELLING OF DOUBLE DIFFUSED TRANSISTORS: DOUBLE EXPONENTIAL DISTRIBUTION OF IMPURITY PROFILESRUSTAGI SC; CHATTOPADHYAYA SK.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 3; PP. 166-170; BIBL. 7 REF.Article

IMPURITY PROFILE ON GAP DIODES IN THE NEIGHBOURHOOD OF A P-N JUNCTIONOELGART G; ARNOLD G.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 609-618; ABS. GER; BIBL. 19 REF.Article

FABRICATION OF LATERAL DOPING PROFILES BY A COMPUTER-CONTROLLED FOCUSED ION BEAM.SELIGER RL; WARD JW.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1378-1381; BIBL. 6 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975Conference Paper

INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS:GAAS VOLTAGE VARACTOR.CHO AY; REINHART FK.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 4; PP. 1812-1817; BIBL. 16 REF.Article

PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILESBUEHLER MG.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1171-1178; BIBL. 21 REF.Serial Issue

R-I PROFILING: A NEW TECHNIQUE FOR MEASURING SEMICONDUCTOR DOPING PROFILES.GLOVER GH; TANTRAPORN W.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 6; PP. 348-349; BIBL. 11 REF.Article

DETERMINATION DES PROFILS D'UN DOPAGE IONIQUE DE STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEUR PAR LA METHODE MONTE CARLO ET PAR LA METHODE DES EQUATIONS INTEGRALESMAN'KOVA LN; POLISHCHUK YU YA; SUPRUN AD et al.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 135-139; BIBL. 9 REF.Article

TECHNIQUE FOR PLOTTING NONEQUILIBRIUM C/V CURVES OF AN M.O.S. CAPACITOR.OLENSKI J; MACHALICA P.1975; ELECTRON LETTERS; G.B.; DA. 1975; VOL. 11; NO 11; PP. 232-234; BIBL. 6 REF.Article

CALCULATION OF AVALANCHE BREAKDOWN VOLTAGE AND DEPLETION LAYER THICKNESS IN A P-N JUNCTION WITH A DOUBLE ERROR FUNCTION DOPING PROFILEBAKOWSKI M; LUNDSTROM I.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 611-616; BIBL. 6 REF.Serial Issue

NONUNIFORM LATERAL IONIC IMPURITY DISTRIBUTIONS AT SI-SIO₂ INTERFACESSILVERSMITH DJ.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 11; PP. 1589-1593; BIBL. 12 REF.Serial Issue

ETUDE THEORIQUE DES GENERATEURS A DIODES A TRANSFERT ELECTRONIQUE INTER-VALLEESPORESH SB; TAGER AS.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 4; PP. 834-840; BIBL. 13 REF.Article

DETERMINATION DE LA RESISTANCE REPARTIE PRES DE LA JONCTION P-NBOJTSOV YU P; GARKUSHA TV; KOSTOUSOVA GI et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 4; PP. 198-200; BIBL. 6 REF.Article

MEASUREMENT OF SUBSTRATE IMPURITY PROFILE OF MIS FIELD-EFFECT TRANSISTORSTIHANYI J.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 263-268; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

IDEAL FET DOPING PROFILETEMPLE VAK.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 619-626; BIBL. 8 REF.Article

BASE COMPONENT OF GAIN AND DELAY TIME IN BASE-IMPLANTED BIPOLAR TRANSISTORSELMASRY MI; ROULSTON DJ.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 371-375; BIBL. 15 REF.Article

CARRIER PROFILING OF INP.LILE DL; COLLINS DA.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 457-458; BIBL. 4 REF.Article

INFLUENCE OF AN IMPURITY PROFILE ON THE DETERMINATION OF INTERFACE STATESFELTIL H.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1227-1230; BIBL. 15 REF.Article

LOW-NOISE GAAS FET'S PREPARED BY ION IMPLANTATIONHIGGINS JA; KUVAS RL; EISEN FH et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 587-596; BIBL. 24 REF.Article

NEW CONTACT RESISTANCE PROFILING METHOD FOR THE ASSESSMENT OF III-V ALLOY MULTILAYER STRUCTURES.GOODFELLOW RC; CARTER AC; DAVIS R et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 328-330; BIBL. 3 REF.Article

I.V. IMPURITY PROFILING WITH A SCHOTTKY BARRIER.SHANNON JM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 707-709; BIBL. 6 REF.Article

COMPUTER SOLUTION OF ONE-DIMENSIONAL POISSON'S EQUATION.KLOPFENSTEIN RW; WU CP.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 6; PP. 329-333; BIBL. 8 REF.Article

DOPING PROFILES BY MOSFET DEEP DEPLETION C(V).BROWN DM; CONNERY RJ; GRAY PV et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 1; PP. 121-127; BIBL. 13 REF.Article

FAST AND NONDESTRUCTIVE METHOD OF C (V) PROFILING OF THIN SEMICONDUCTOR LAYERS ON AN INSULATING SUBSTRATE.BINET M.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 24; PP. 580-581; BIBL. 4 REF.Article