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ENERGY LEVELS OF SOME RARE-EARTH RELATED IMPURETIES IN GERMANIUMPEARTON SJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 2; PP. K135-K138; BIBL. 8 REF.Article

CLIMATIC FLUCTUATIONS DUE TO DEEP OCEAN CIRCULATIONWATTS RG; HAYDER ME.1983; SCIENCE; ISSN 0036-8075; USA; DA. 1983; VOL. 219; NO 4583; PP. 387-388; BIBL. 7 REF.Article

BREVET 2.240.959 (A1) (7427958). A 12 AOUT 1974. ACIER AMELIORE POUR EMBOUTISSAGE PROFOND ET SON PROCEDE DE PREPARATIONsdPatent

DEEP-DRAWING ON SINGLE- AND DOUBLE-ACTION PANEL PRESSES AND A CONSIDERATION OF ACCELERATED DRIVE MECHANISMS. II = EMBOUTISSAGE PROFOND SUR DES PRESSES A SIMPLE OU DOUBLE EFFET. IIDOEGE E; FETZER H; KELLENBENZ R et al.1972; SHEET METAL INDUSTR.; G.B.; DA. 1972; VOL. 49; NO 5; PP. 326-334 (7 P.); ABS. FR. ALLEM. ESP.; BIBL. 19 REF.Serial Issue

DEEP WELL PLANNING CAN MINIMIZE DRILLING PROBLEMS = UNE PLANIFICATION DES PUITS PROFONDS PEUT REDUIRE LES PROBLEMES DE FORAGEEATON BA.1972; WORLD OIL; U.S.A.; DA. 1972; VOL. 174; NO 7; PP. 59-62; BIBL. 10 REF.Serial Issue

BREVET 2.159.747 (B) (7140356). A 10 NOVEMBRE 1971. OUTILLAGE DE MACHINE-OUTIL POUR L'EXECUTION DE TROUS PROFONDSsdPatent

BREVET FORET APTE A TRAVAILLER A GRANDE PROFONDEUR1979; ; FRA; DA. 1979-01-26; FR/A1/2.391.801; DEP.78.15059/1978-05-22; PR. DE/P27.24.266.6/1977-05-28Patent

BERECHNUNG DES ZUSCHNITTS RUNDER ZIEHTEILE FUER DAS ZIEHEN AUF STUFENUMFORMAUTOMATEN ODER IM STREIFEN = CALCUL DES FLANS POUR L'EMBOUTISSAGE UNITAIRE OU EN BANDES SUR PRESSES AUTOMATIQUESTHORWARTH J.1974; METALLVERARBEITUNG; DTSCH.; DA. 1974; VOL. 28; NO 4; PP. 111-112Article

CALCUL, BASE SUR LA THERMO-ELASTICITE, D'UN RECIPIENT ETANCHE POUR L'APPAREILLAGE DE CONTROLE DANS UN FORAGE PROFONDKERIMOV ZG; YAGUBOV NI; IBRAGIMOV I KH et al.1972; IZVEST. VYSSH. UCHEBN. ZAVED., NEFT GAZ; S.S.S.R.; DA. 1972; NO 5; PP. 91-96Serial Issue

ECONOMIES SPRING FROM DEEP DRILLED HOLES.1978; METALWORKG PRODUCT.; GBR; DA. 1978; VOL. 122; NO 3; PP. 101-103Article

BESCHNEIDEN VON TIEFZIEHTEILEN AN DER ZARGE = LE DECOUPAGE DU BORD DES PIECES EN FORME DE GODET OBTENUES PAR EMBOUTISSAGE PROFONDHOFMANN H.1974; FERTIG.-TECH. BETRIEB; DTSCH.; DA. 1974; VOL. 24; NO 2; PP. 97-99; ABS. ANGL. RUSSE; BIBL. 2 REF.Article

LUPUS ERYTHEMATEUX PROFOND DE KAPOSI-IRGANGVULCAN P; HOBAI I.1972; DERMATO-VENEROL.; ROMAN.; DA. 1972; VOL. 17; NO 4; PP. 371-373Serial Issue

BREVET 2.126.620 (B) (7104873). A 12 FEVRIER 1971. OUTIL POUR LE PERCAGE DE TROUS DE GRANDE LONGUEUR DANS DES PIECES METALLIQUESsdPatent

QUELQUES ASPECTS DE L'UTILISATION DES FLUIDES DE FORAGE DANS LES FORAGES PROFONDSANA J; MITITEANU L; PITEA T et al.1973; PETROL SI GAZE; ROMAN.; DA. 1973; VOL. 24; NO 4; PP. 205-209; ABS. ANGL. RUSSE ALLEM. FR.; BIBL. 16 REF.Serial Issue

BREVET 2.124.624 (B) (7204562). A 10 FEVRIER 1972. PROCEDE ET APPAREIL DE FORMAGE D'UN FLANsdPatent

BREVET 2.363.393 (A1) (77 26846). - 5 SEPTEMBRE 1977. FORET POUR PERCAGE PROFOND.sdPatent

ENTWICKLUNG UND EINSATZ EINES TIEFSEEBOJENSYSTEMS = PERFECTIONNEMENT ET UTILISATION DES BOUEES EN MER PROFONDEBENGELSDORFF E.1982; BEITR. MEERESKD.; ISSN 0067-5148; DDR; DA. 1982; NO 46; PP. 53-56; BIBL. 4 REF.Article

STATION SISMIQUE DE FOND AUTONOMEGUTSALYUK VM; KARABOVICH SV.1979; GEOFIZ. ZH.; UKR; DA. 1979; VOL. 1; NO 3; PP. 98-102; ABS. ENG; BIBL. 4 REF.Article

FIELD DRIFT AND HYDROGENATION OF DEEP LEVEL DEFECTS ASSOCIATED WITH 1-MEV ION-IMPLANTED OXYGEN IN GERMANIUM DIODESTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3213-3215; BIBL. 36 REF.Article

ABSOLUTE ENERGY OF THE NITROGEN-RELATED ELECTRON TRAP IN GALLIUM PHOSPHIDEZDANSKY K; KRATENA L; MATYAS M JR et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 335-339; ABS. RUS; BIBL. 15 REF.Article

DEEP LEVEL STUDIES OF HG1-XCDXTE. II: CORRELATION WITH PHOTODIODE PERFORMANCEPOLLA DL; REINE MB; JONES CE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5132-5138; BIBL. 15 REF.Article

STUDY OF THE DEEP LEVELS IN A PROTON-BOMBARDED GALLIUM ARSENIDEATANASSOV R; ASANO T; FURUKAVA S et al.1981; BULG. J. PHYS.; ISSN 0323-9217; BGR; DA. 1981; VOL. 8; NO 6; PP. 611-614; ABS. RUS; BIBL. 12 REF.Article

OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS/ALXGA1-XAS INTERFACE GROWN BY MOLECULAR BEAM EPITAXYMCAFEE SR; LANG DV; TSANG WT et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 520-522; BIBL. 13 REF.Article

CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS MESFET'S ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATESSRIRAM S; DAS MB.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 586-592; BIBL. 21 REF.Article

QUENCHED-IN DEEP LEVELS IN BORON-DOPED SILICONIOANNOU DE.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 93-94; BIBL. 8 REF.Article

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