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PROPRIETES ELECTRONIQUES DES METAUX ET ALLIAGES1973; PARIS; MASSON; DA. 1973; PP. (543 P.); BIBL. DISSEM.; ISBN 2225361903Book

MOLECULAR ORBITAL CALCULATION OF ELECTRONIC PROPERTIES OF METAL NUCLEIBAETZOLD RC.1973; PHOTOGR. SCI. ENGNG; U.S.A.; DA. 1973; VOL. 17; NO 1; PP. 78-85; BIBL. 24 REF.Serial Issue

MOBILITY-LIFETIME PRODUCT AND INTERFACE PROPERTY IN AMORPHOUS SILICON SOLAR CELLSOKAMOTO H; KIDA H; NONOMURA S et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3236-3243; BIBL. 32 REF.Article

PHOTOCONDUCTIVITY AND HOLE TRANSPORT IN POLYMERS OF AROMATIC AMINE-CONTAINING METHACRYLATESSTOLKA M; PAI DM; RENFER DS et al.1983; JOURNAL OF POLYMER SCIENCE. POLYMER CHEMISTRY EDITION; ISSN 0360-6376; USA; DA. 1983; VOL. 21; NO 4; PP. 969-983; BIBL. 30 REF.Article

STAEBLER-WRONSKI EFFECTS IN HYDROGENATED AMORPHOUS SI1-XGEXNAKAMURA G; SATO K; YUKIMOTO Y et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 1-2; PP. 75-84; BIBL. 15 REF.Article

CRYSTAL DEFECT PROBLEMSSCHWUTTKE GH.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 327-332; BIBL. 4 REF.Conference Paper

DETERMINATION OF LIFETIME AND DIFFUSION LENGTH IN SILICON SOLAR CELLS BY SELF-BIASED (PHOTOVOLTAGE) CAPACITANCE MEASUREMENTSSWARUP P; JAIN VK.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 9; PP. 259-261; BIBL. 10 REF.Article

EVIDENCE FOR STRUCTURAL INHOMOGENICITY IN LIQUID IN2TE3TSUCHIYA Y; TAKEDA S; TAMAKI S et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 12; PP. 2561-2575; BIBL. 24 REF.Article

PAS STUDY OF GAP-STATE PROFILES OF P-DOPED AND UNDOPED A-SI:HTANAKA K; YAMASAKI S.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 8; NO 1-3; PP. 277-283; BIBL. 14 REF.Article

RELATIONSHIP BETWEEN CRYSTALLINITY AND ELECTRONIC PROPERTIES OF SILICON-ON-SAPPHIREJASTRZEBSKI L; DUFFY MT; CORBOY JF et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 1; PP. 37-43; BIBL. 13 REF.Article

A SIMPLE METHOD FOR THE PREDICTION OF NEW INTERMETALLIC PHASES = UNE METHODE SIMPLE POUR LA PREVISION DE NOUVELLES PHASES INTERMETALLIQUESVILLARS P; GIRGIS K; HULLIGER F et al.1982; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1982; VOL. 42; NO 1; PP. 89-100; BIBL. 27 REF.Article

STRUCTURE AND ELECTRONIC PROPERTIES OF CHEMICALLY SPRAYED CDS FILMSCHOW LW; LEE YC; KWOK HL et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 81; NO 4; PP. 307-318; BIBL. 14 REF.Article

POLYMERS AS ELECTRONIC MATERIALSMORT J.1980; ADV. PHYS.; ISSN 0001-8732; GBR; DA. 1980; VOL. 29; NO 2; PP. 367-408; BIBL. 2 P.Article

PROPRIETES ELECTRONIQUES NATURELLES ET INDUITES PAR RAYONNEMENT GAMMA DE VERRES AUX PHOSPHATES ET DE VERRES DE SILICEBARTHE THERESE.1980; ; FRA; DA. 1980; 197 P.: ILL.; 30 CM; ABS. ENG; BIBL. 12 P.; TH.: SCI. PHYS./TOULOUSE 3/1980/922Thesis

OXIDE/SEMICONDUCTOR PHOTOVOLTAIC HETEROJUNCTIONS BASED ON CDTE OR INPBUBE RH; COURREGES FG; FAHRENBRUCH AL et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 432-439; BIBL. 11 REF.;_EUR-6376Conference Paper

ELECTRONIC PROPERTIES OF AMORPHOUS SILICON IN SOLAR CELL OPERATION.WRONSKI CR.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 351-357; BIBL. 11 REF.Article

LES MATERIAUX POUR PHOTOPILES SOLAIRES. = THE MATERIALS FOR SOLAR CELLSRODOT M.1975; ACTA ELECTRON.; FR.; DA. 1975; VOL. 18; NO 4; PP. 345-358; ABS. ANGL. ALLEM.; BIBL. 45 REF.Article

SUR LES PHENOMENES DE RELAXATION DANS LES METAUX ET ALLIAGESMAL'TSEVA GK; PITERIMOV VA.1974; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1974; NO 5; PP. 189-196; BIBL. 12 REF.Article

ELECTRONIC PROPERTIES OF SULFUR CONTAINING CONJUGATES POLYMERSBREDAS JL; ELSENBAUMER RL; CHANCE RR et al.1983; JOURNAL OF CHEMICAL PHYSICS; ISSN 0021-9606; USA; DA. 1983; VOL. 78; NO 9; PP. 5656-5662; BIBL. 40 REF.Article

MASSACHUSETTS INSTITUTE OF TECHNOLOGY. RESEARCH IN MATERIALS: ANNUAL REPORTSMITH KA ED.1983; RESEARCH IN MATERIALS; ISSN 0542-9455; USA; DA. 1983; 425 P.; BIBL. DISSEM.Serial Issue

PHOTO-INDUCED CHANGES IN THE BULK DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS SILICON ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECTCOHEN JD; LANG DV; HARBISON JP et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 1-2; PP. 119-131; BIBL. 18 REF.Article

GROWTH OF GAAS EPITAXIAL LAYERS BY CLOSE SPACED VAPOR TRANSPORTMIMILA ARROYO J; REYNOSO JA; LEGROS R et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 952-954; BIBL. 10 REF.Conference Paper

L'EPITAXIE PAR JETS MOLECULAIRES: APPLICATION A L'ETUDE DE LA SURFACE GAAS (001) ET DE SON INTERACTION AVEC UN METAL = MOLECULAR BEAM EPITAXY: APPLICATION TO GAAS (001) SURFACE STUDY AND ITS INTERACTION WITH METALMASSIES JEAN.1982; ; FRA; DA. 1982; 242 P.-86 PL.; 30 CM; BIBL. DISSEM.; TH.: SCI. PHYS./PARIS 6/1982Thesis

NEW ADDUCTS OF PHTHALOCYANINATOCOBALT (II) WITH BASE MOLECULES. III: CHEMICAL AND SPECTROSCOPIC RELATIONS BETWEEN MONO (LOW- AND HIGH-SPIN) AND BIS ADDUCTSCARIATI F; MICERA G; ANTONIETTA ZORODDU M et al.1981; DALTON TRANS.; ISSN 0300-9246; GBR; DA. 1981; NO 2; PP. 535-538; BIBL. 9 REF.Article

PREPARATION AND ELECTRONIC PROPERTIES OF INTERCALATION COMPOUNDS OF GRAPHITE FIBERSENDO M; KOYAMA T; INAGAKI M et al.1981; SYNTH. METAL.; CHE; DA. 1981; VOL. 3; NO 3-4; PP. 177-186; BIBL. 20 REF.Conference Paper

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