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Molecular beam epitaxy of metastable, diamond structure SnxGe1-x alloysPUKITE, P. R; HARWIT, A; IYER, S. S et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2142-2144, issn 0003-6951, 3 p.Article

Sensitive reflection high-energy electron diffraction measurement of the local misorientation of vicinal GaAs surfacesPUKITE, P. R; VAN HOVE, J. M; COHEN, P. I et al.Applied physics letters. 1984, Vol 44, Num 4, pp 456-458, issn 0003-6951Article

Diffraction from stepped surfaces. II: Arbitrary terrace distributionsPUKITE, P. R; LENT, C. S; COHEN, P. I et al.Surface science. 1985, Vol 161, Num 1, pp 39-68, issn 0039-6028Article

Ion beam enhanced diffusion of B during Si molecular beam epitaxyPUKITE, P. R; IYER, S. S; SCILLA, G. J et al.Applied physics letters. 1989, Vol 54, Num 10, pp 916-918, issn 0003-6951, 3 p.Article

Properties of diamond structure SnGe films grown by molecular beam epitaxyHARWIT, A; PUKITE, P. R; ANGILELLO, J et al.Thin solid films. 1990, Vol 184, pp 395-401, issn 0040-6090, 7 p.Conference Paper

Shot noise in solid state diodesVAN DER ZIEL, A; ANDERSON, J. B; JINGMING XU et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1069-1071, issn 0038-1101Article

Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scatteringIYER, S. S; TSANG, J. C; COPEL, M. W et al.Applied physics letters. 1989, Vol 54, Num 3, pp 219-221, issn 0003-6951, 3 p.Article

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