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LES DIELECTRIQUES EN COUCHES MINCES PAR PULVERISATION CATHODIQUEREIBER LM.sdIN: C.R. SYMP. PULVERISATION CATHOD. APPL.; NICE; 1972; PARIS; MAPREN; DA. S.D.; PP. 53-90; BIBL. 2 P.Conference Paper

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ETUDE HOLOGRAPHIQUE DE LA PULVERISATION TRES FINE DANS UN BRULEUR A INJECTION TOURBILLONNAIRE. = HOLOGRAPHIE STUDY OF FINE PULVERIZATION IN A TURBULENT INJECTION BORNERCOULON C; ROYER H.1975; ISL-2-75; FR.; DA. 1975; PP. 1-22; H.T. 17; ABS. ALLEM.; BIBL. 9 REF.Report

TEMPERATURE RISE DURING FILM DEPOSITION BY RF AND DC SPUTTERINGLAU SS; MILLS RH; MUTH DG et al.1972; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1972; VOL. 9; NO 4; PP. 1196-1202; BIBL. 13 REF.Serial Issue

CROISSANCE DE COUCHE MINCE DE TANTALE PAR PULVERISATION HFFUJIOKA T; FUJINAMI T.1972; J. VACUUM SOC JAP.; JAP.; DA. 1972; VOL. 15; NO 10; PP. 362-368; BIBL. 7 REF.Serial Issue

ETUDE PAR SPECTROMETRIE DE MASSE DE LA PULVERISATION CATHODIQUE REACTIVE HAUTE FREQUENCESHINOKI F.1977; BULL. ELECTROTECH. LAB.; JAP.; DA. 1977; VOL. 41; NO 8; PP. 64-70; ABS. ANGL.; BIBL. 16 REF.Article

THE INFLUENCE OF SPUTTERING AND TRANSPORT MECHANISMS ON TARGET ETCHING AND THIN FILMS GROWTH IN RF SYSTEMS. II. TRANSPORT AND DEPOSITION PROCESSESHOLLAND L; PRIESTLAND CRD.1972; VACUUM; G.B.; DA. 1972; VOL. 22; NO 4; PP. 143-149; BIBL. 19 REF.Serial Issue

MECHANISM OF RF REACTIVE SPUTTERINGSHINOKI F; ITOH A.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3381-3384; BIBL. 10 REF.Article

PROPERTIES OF ZIRCONIUM NITRIDE FILM RESISTORS DEPOSITED BY REACTIVE RF SPUTTERING.IZUMI K; MASANOBU T; ARIYOSHI H et al.1975; I.E.E.E. TRANS. PARTS HYBRID. PACKAG.; U.S.A.; DA. 1975; VOL. 11; NO 2; PP. 105-107; BIBL. 8 REF.Article

PBTE RF-SPUTTERED INFRARED DETECTORS.CORSI C.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 3; PP. 137-139; BIBL. 18 REF.Article

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CYLINDRICAL DIODE CONTINUOUS VACUUM SPUTTERING EQUIPMENT FOR LABORATORY AND HIGH VOLUME PRODUCTIONGEORGE CH.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 2; PP. 393-397; BIBL. 5 REF.Serial Issue

THE ENERGY SPECTRA OF SPUTTERED IONSDENNIS E; MACDONALD RJ.1972; RAD. EFFECTS; G.B.; DA. 1972; VOL. 13; NO 3; PP. 243-248; BIBL. 8 REF.Serial Issue

A NEW METHOD OF SAMPLING ULV DROPLETS = UNE NOUVELLE METHODE D'ECHANTILLONNAGE DES GOUTTELETTES DE TRES FAIBLE VOLUMEBEIDLER EJ.1975; MOSQUITO NEWS; U.S.A.; DA. 1975; VOL. 35; NO 4; PP. 482-488; BIBL. 3 REF.Article

AN INVESTIGATION OF RF SPUTTER ETCHED SILICON SURFACES USING HELIUM ION BACKSCATTER.SACHSE GW; MILLER WE; GROSS CE et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 431-435; BIBL. 14 REF.Article

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SPECTRES ENERGETIQUES DE LA COMPOSANTE NEUTRE LORS DE LA DIFFUSION PAR UNE CIBLE SOLIDECHICHEROV VM.1972; ZH. EKSPER. TEOR. FIZ., PIS'MA REDAKC.; S.S.S.R.; DA. 1972; VOL. 16; NO 6; PP. 328-331; BIBL. 11 REF.Serial Issue

PARAMETERS CONTROLLING THE REACTIVE SPUTTER DEPOSITION OF THE HAFNIUM TANTALUM NITRIDE RESISTIVE SEA.KNOLLE WR; BALLAMY WC.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 561-565; BIBL. 8 REF.Article