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Results 1 to 25 of 5377

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ALIMENTATION ELECTRIQUE POUR LA PULVERISATION DE COUCHES MINCES DANS UN CHAMP HAUTE FREQUENCEZBIKOWSKI A; KOLATOR W.1971; PRACE PRZEMYSL. INST. ELEKTRON.; POLSKA; DA. 1971; VOL. 12; NO 3-4; PP. 119-124Serial Issue

SILICON NITRIDE FILMS BY DIRECT RF SPUTTER DEPOSITION.KOMINIAK GJ.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1271-1273; BIBL. 58 REF.Article

AN INVESTIGATION OF RF SPUTTER ETCHED SILICON SURFACES USING HELIUM ION BACKSCATTER.SACHSE GW; MILLER WE; GROSS CE et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 431-435; BIBL. 14 REF.Article

BELL-JAR RF SPUTTERING SYSTEM.ROCK FC; SMITH CW.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 943-945; BIBL. 9 REF.Conference Paper

EFFET DE LA QUALITE DU VIDE SUR LA VITESSE DE DEPOT DE SIO2 OBTENU PAR PULVERISATION HAUTE FREQUENCEHOSOKAWA N.1976; J. VACUUM. SOC. JAP.; JAP.; DA. 1976; VOL. 19; NO 3; PP. 82-89; ABS. ANGL.; BIBL. 12 REF.Article

LES CARACTERISTIQUES DU COURANT D'IONS DU CIRCUIT DE CATHODE DANS UN SYSTEME HF DE PULVERISATION PAR BOMBARDEMENT IONIQUETSUKADA T; HOSOKAWA N.1975; J. VACUUM SOC. JAP.; JAP.; DA. 1975; VOL. 18; NO 11; PP. 405-408; BIBL. 2 REF.Article

QUELQUES CARACTERISTIQUES ELECTRIQUES DE COUCHES DE SIO2 OBTENUES PAR PULVERISATIONS DE QUARTZ DANS UNE DECHARGE HAUTE FREQUENCEKOSENKO VE; ONIPKO AF; SVECHNIKOV SV et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 17; PP. 29-33; BIBL. 21 REF.Article

THE INTERACTION OF PHOTORESISTS WITH METALS AND OXIDES DURING RF SPUTTER-ETCHINGVOSSEN JL; DAVIDSON EB.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1708-1714; BIBL. 22 REF.Serial Issue

CONTROLE D'EPAISSEUR DE COUCHES MINCES DE VERRE PULVERISEES SOUS RADIOFREQUENCEYAMAGUCHI T; TAKAHASHI H.1976; J. VACUUM SOC. JAP.; JAP.; DA. 1976; VOL. 19; NO 5; PP. 160-168; ABS. ANGL.; BIBL. 10 REF.Article

LOW VOLTAGE TRIODE SPUTTERING WITH A CONFINED PLASMA: V. APPLICATION TO BACKSPUTTER DEFINITION.TISONE TC; CRUZAN PD.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 3; PP. 677-688; BIBL. 37 REF.Article

R.F. DIODE SPUTTERING IN PERMANENT-MATCH MODECHRISTENSEN O; OLSEN OH; HOLM NE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 3; PP. 181-191; BIBL. 25 REF.Article

ULTRA-STABLE SYSTEM FOR RF SPUTTERING WITH RF-INDUCED SUBSTRATE BIAS.VOSSEN JL; O'NEILL JJ JR.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 5; PP. 1052-1057; BIBL. 19 REF.Article

ATOMIC ARRANGEMENTS IN SPUTTERED THIN FILMS OF VITREOUS SE-AS WITH 36 TO 50 AT % AS.RECHTIN MD; AVERBACH BL.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 283-292; ABS. ALLEM.; BIBL. 26 REF.Article

OXIDATION OF LEAD FILMS BY RF SPUTTER ETCHING IN AN OXYGEN PLASMA.GREINER JH.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 32-37; BIBL. 17 REF.Article

DEPOT DE STRUCTURES MULTICOUCHES A L'AIDE D'UN DISPOSITIF DE PULVERISATION IONIQUE HAUTE FREQUENCE COMPORTANT DEUX CIBLESOBUCHOWICZ F; KAZIMIERCZUK W.1974; PRACE OSRODKA BADAWCZO-ROZWOJOW. ELEKTRON. PROZNIOW.; POLSKA; DA. 1974; VOL. 1; NO 1; PP. 71-77; ABS. ANGL. RUSSE; BIBL. 5 REF.Article

AUFBAU EINES ASYMMETRISCHEN DIODENSYSTEMS FUER DIE HOCHFREQUENZPLASMAZERSTAEUBUNG. = CONCEPTION D'UN SYSTEME DE DIODE ASYMETRIQUE POUR LA PULVERISATION EN HAUTE FREQUENCEKALTOFEN R; THIEMT K; REINHARD G et al.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 5; PP. 479-487; ABS. ANGL.; BIBL. 17 REF.Article

BESTIMMUNG DER PINHOLE-DICHTE VON ISOLATORSCHICHTEN DURCH CHEMISCHES AETZEN (I). DAS SYSTEM SILIZIUM-SILIZIUMDIOXID. = DETERMINATION PAR ATTAQUE CHIMIQUE DE LA DENSITE DES "TROUS D'EPINGLES" DANS DES COUCHES ISOLANTES (I). LE SYSTEME SILICIUM-DIOXYDE DE SILICIUMTHIEMT K; KALTOFEN R.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 3; PP. 305-312; ABS. ANGL.; BIBL. 17 REF.Article

FABRICATION OF SHORT-CHANNEL MOSFETS WITH REFRACTORY METAL GATES USING RF SPUTTER ETCHING.RODRIGUEZ A; MISRA M; HESSELBOM H et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 1; PP. 17-21; H.T. 1; BIBL. 11 REF.Article

R.F. SPUTTERED THIN FILMS FOR INTEGRATED OPTICAL COMPONENTS.PITT CW; GFELLER FR; STEVENS RJ et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 26; NO 1; PP. 25-51; BIBL. 1 P.Article

ETUDES ELECTROCHIMIQUES DES ELECTRODES A COUCHES MINCES SEMICONDUCTEURS. I. PREPARATION DE L'OXYDE DE ZN EN COUCHE MINCE, PAR PULVERISATION REACTIVE RADIOFREQUENCETSUIKI M; MINOURA H.1975; NIPPON KAGAKU KAISHI; JAP.; DA. 1975; NO 1; PP. 48-51; ABS. ANGL.; BIBL. 13 REF.Article

RADIO FREQUENCY PLASMA EXCITATIONBURDEN M ST J; CROSS KB.1979; VACUUM; GBR; DA. 1979; VOL. 29; NO 1; PP. 13-14Article

IMPROVEMENT OF RF SPUTTERING BY CROSSED EM FIELDS.HADEN CR.1975; I.E..E.E. TRANS. INDUSTR. ELECTRON. CONTROL INSTRUMENT.; U.S.A.; DA. 1975; VOL. 22; NO 4; PP. 549-552; BIBL. 4 REF.Article

PROPERTIES OF IRREGULAR BOUNDARY OF RF SPUTTERED GLASS FILM FOR LIGHT GUIDESUEMATSU Y; FURUY K; HAKUTA M et al.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 744-745; BIBL. 6 REF.Serial Issue

PULVERISATION DE COUCHES MINCES METALLIQUES ET DIELECTRIQUES LORS D'UNE DECHARGE HAUTE FREQUENCEBRZEZINSKA D.1971; PRACE PRZEMYSL. INST. ELEKTRON.; POLSKA; DA. 1971; VOL. 12; NO 3-4; PP. 114-118; BIBL. 2 REF.Serial Issue

LSI SURFACE LEVELING BY RF SPUTTER ETCHINGYOSHIO HOM MA; HARADA S; KAJI T et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1531-1533; BIBL. 5 REF.Article

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