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PARAMETERS CONTROLLING THE REACTIVE SPUTTER DEPOSITION OF THE HAFNIUM TANTALUM NITRIDE RESISTIVE SEA.KNOLLE WR; BALLAMY WC.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 561-565; BIBL. 8 REF.Article

REACTIVE EVAPORATION.BUNSHAH RF.1974; IN: SCI. TECHNOL. SURF. COATING. NATO ADV. STUDY INST.; LONDON; 1972; LONDON; ACAD. PRESS; DA. 1974; PP. 361-368; BIBL. 16 REF.Conference Paper

THE PREPARATION OF TANTALUM NITRIDE TARGETS BY REACTIVE SPUTTERINGWORMALD MR; UNDERWOOD BY; ALLEN KW et al.1973; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1973; VOL. 107; NO 2; PP. 233-235; BIBL. 6 REF.Serial Issue

COMPOSITION ET STRUCTURE DES COUCHES MINCES DE NITRURE ET CARBONITRURE DE NIOBIUM ELABOREES PAR PULVERISATION CATHODIQUE REACTIVE.ABUERT A; SPITZ J.1975; VIDE; FR.; DA. 1975; NO 175; PP. 1-7; ABS. ANGL.; BIBL. 7 REF.Article

PULVERISATION CATHODIQUE REACTIVE DU SULFURE DE ZINC ACTIVE AU CUIVRE ET AU CHLORE.DURAND S; BUGNET P; DEFORGES J et al.1975; VIDE; FR.; DA. 1975; NO 175; PP. 8-10; ABS. ANGL.; BIBL. 5 REF.Article

ELECTROCHROMIC IRIDIUM OXIDE FILMS PREPARED BY REACTIVE SPUTTERINGSCHIAVONE LM; DAUTREMONT SMITH WC; BENI G et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 10; PP. 823-825; BIBL. 7 REF.Article

EVALUATION OF IMPURITIES IN REACTIVE SPUTTERED TIN FILMHATANO T; UEMURA Y; UCHIDA K et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 11; PP. L141-L143; BIBL. 6 REF.Article

REALISATION DE COUCHES MINCES SEMI-CONDUCTRICES DU TYPE III-V A BASE D'AZOTE PAR PULVERISATION CATHODIQUE REACTIVE.PUYCHEVRIER N; MENORET M; CACHARD M et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 99-103; ABS. ANGL.; BIBL. 3 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

CRYSTAL STRUCTURE OF REACTIVE SPUTTERED SILVER FILMS AND THERMAL DESORPTION OF OXYGEN FROM THESE FILMS.TANAKA S; ABE T; YAMASHINA T et al.1974; CHEM. LETTERS; JAP.; DA. 1974; NO 6; PP. 599-602; BIBL. 6 REF.Article

IMPROVEMENT OF TANTALUM NITRIDE RESISTOR FILM STABILITY THROUGH ANALYSIS ON PLATEAU PHENOMENANAKAMURA M; FUJIMORI M; NISHIMURA Y et al.1973; JAP. J. APPL. PHYS.; JAP.; DA. 1973; VOL. 12; NO 1; PP. 30-39; BIBL. 9 REF.Serial Issue

PROTON IRRADIATION AT 30OK AND ISOCHRONAL ANNEALING OF REACTIVELY SPUTTERED TA THIN-FILM RESISTORSSHEWCHUN J; HARDY WR; PRONKO PP et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 4915-4921; BIBL. 15 REF.Serial Issue

ETUDE PAR SPECTROMETRIE DE MASSE DE LA PULVERISATION CATHODIQUE REACTIVE HAUTE FREQUENCESHINOKI F.1977; BULL. ELECTROTECH. LAB.; JAP.; DA. 1977; VOL. 41; NO 8; PP. 64-70; ABS. ANGL.; BIBL. 16 REF.Article

EFFECT OF A SECONDARY PASSIVATING FILM OF SIO2 DEPOSITED BY CATHODE SPUTTERING ON THE PARAMETERS OF PLANAR TRANSISTORS.ORLINOV VI; GORANCHEV BG; HRISTOV DK et al.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 3; PP. 236-246; ABS. RUSSE; BIBL. 7 REF.Article

REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATESHORWITZ CM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1320-1323; BIBL. 10 REF.Article

MECHANISM OF RF REACTIVE SPUTTERINGSHINOKI F; ITOH A.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3381-3384; BIBL. 10 REF.Article

ETUDE AU MICROSCOPE ELECTRONIQUE DES COUCHES DE NITRURE DE THALLIUMPILYANKEVICH AN; SHAGINYAN LR; ANDREEVA AF et al.1974; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1974; VOL. 38; NO 7; PP. 1537-1538; BIBL. 6 REF.Article

DEPOSITION AND PROPERTIES OF RF REACTIVELY SPUTTERED SIO2 LAYERSKORTLANDT J; OOSTING L.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 10; PP. 153-159; BIBL. 14 REF.Article

DISPOSITIF POUR LE DEPOT DE REVETEMENTS OPTIQUES MULTICOUCHES PAR UNE METHODE DE PULVERISATION CATHODIQUE REACTIVEBITNER LR; DANILINA TI; MAR'IN AV et al.1980; OPT.-MEKH. PROMYSHL.; SUN; DA. 1980; NO 3; PP. 43-44; BIBL. 2 REF.Article

BIREFRINGENT WAVEGUIDES PREPARED BY REACTIVE SPUTTERING OF NIOBIUM IN O2-N2 MIXTURES.INGREY SJ; WESTWOOD WD.1976; APPL. OPT.; U.S.A.; DA. 1976; VOL. 15; NO 3; PP. 607-609; BIBL. 10 REF.Article

PROPERTIES OF ZIRCONIUM NITRIDE FILM RESISTORS DEPOSITED BY REACTIVE RF SPUTTERING.IZUMI K; MASANOBU T; ARIYOSHI H et al.1975; I.E.E.E. TRANS. PARTS HYBRID. PACKAG.; U.S.A.; DA. 1975; VOL. 11; NO 2; PP. 105-107; BIBL. 8 REF.Article

DIE HERSTELLUNG DUENNER FILME DURCH KATHODENZERSTAEUBUNG. = LA FABRICATION DES COUCHES MINCES PAR PULVERISATION CATHODIQUEREICHELT K.1975; VAKUUM-TECH.; DTSCH.; DA. 1975; VOL. 24; NO 1; PP. 1-11; ABS. ANGL. FR.; BIBL. 1 P. 1/2Article

PBTE RF-SPUTTERED INFRARED DETECTORS.CORSI C.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 3; PP. 137-139; BIBL. 18 REF.Article

TANTALUM ALUMINIUM NITRIDE THIN FILM RESISTORS WITH HIGH SHEET RESISTANCE.KAMO T; YAMAZAKI J; NAKAMURA M et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 2; PP. 145-164; BIBL. 8 REF.Article

EFFECT OF REACTANT NITROGEN PRESSURE ON THE MICROSTRUCTURE AND PROPERTIES OF REACTIVELY SPUTTERED SILICON NITRIDE FILMS.MAGAB CJ; PETROFF PM; SHENG TT et al.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 122; NO 6; PP. 815-822; BIBL. 12 REF.Article

CONTRIBUTION A L'ETUDE DES PROPRIETES DIELECTRIQUES DES COUCHES MINCES PREPAREES PAR PULVERISATION CATHODIQUE REACTIVESARROCA M.1972; AO-CNRS-7785; FR.; DA. 1972; PP. 1-102; H.T. 17; BIBL. 2 P.; (THESE DOCT. ING.; UNIV. LOUIS-PASTEUR STRASBOURG; 1972)Thesis

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