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THE DEPOSITION RATE OF METALLIC THIN FILMS IN THE REACTIVE SPUTTERING PROCESSABE T; YAMASHINA T.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO NO 1; PP. 19-27; BIBL. 15 REF.Article

CARACTERISATION DE COUCHES MINCES D'OXYDES METALLIQUES PREPAREES PAR PULVERISATION CATHODIQUE REACTIVE.VAN CAKENBERGHE J; HECQ M.1975; METALLURGIE; BELG.; DA. 1975; VOL. 15; NO 4; PP. 176-181; BIBL. 9 REF.; (JOURN. ETUD. METAUX ALLIAGES OXYDES NON EQUILIBRE; MONS; 1974)Conference Paper

ETUDE DU PROCESSUS DE PULVERISATION CATHODIQUE REACTIVEBITNER LR; DANILINA TI.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 71-73; BIBL. 6 REF.Article

PARAMETERS CONTROLLING THE REACTIVE SPUTTER DEPOSITION OF THE HAFNIUM TANTALUM NITRIDE RESISTIVE SEA.KNOLLE WR; BALLAMY WC.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 561-565; BIBL. 8 REF.Article

REACTIVE EVAPORATION.BUNSHAH RF.1974; IN: SCI. TECHNOL. SURF. COATING. NATO ADV. STUDY INST.; LONDON; 1972; LONDON; ACAD. PRESS; DA. 1974; PP. 361-368; BIBL. 16 REF.Conference Paper

THE PREPARATION OF TANTALUM NITRIDE TARGETS BY REACTIVE SPUTTERINGWORMALD MR; UNDERWOOD BY; ALLEN KW et al.1973; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1973; VOL. 107; NO 2; PP. 233-235; BIBL. 6 REF.Serial Issue

COMPOSITION ET STRUCTURE DES COUCHES MINCES DE NITRURE ET CARBONITRURE DE NIOBIUM ELABOREES PAR PULVERISATION CATHODIQUE REACTIVE.ABUERT A; SPITZ J.1975; VIDE; FR.; DA. 1975; NO 175; PP. 1-7; ABS. ANGL.; BIBL. 7 REF.Article

SINGLE-CRYSTAL BETA -SIC FILMS BY REACTIVE SPUTTERING.HAQ KE.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 5; PP. 255-256; BIBL. 10 REF.Article

PREPARATION DE COUCHES DE TIC PAR PULVERISATION REACTIVENAKAMURA K; SHINOKI F; ITOH A et al.1974; J. JAP. INST. METALS; JAP.; DA. 1974; VOL. 38; NO 10; PP. 913-919; ABS. ANGL.; BIBL. 30 REF.Article

FERROELECTRIC THIN FILMS BY REACTIVE SPUTTERING AND HIGH-TEMPERATURE CONVERSIONVOGEL SF; BARLOW IC.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 2; PP. 381-385; BIBL. 8 REF.Serial Issue

PULVERISATION CATHODIQUE REACTIVE DU SULFURE DE ZINC ACTIVE AU CUIVRE ET AU CHLORE.DURAND S; BUGNET P; DEFORGES J et al.1975; VIDE; FR.; DA. 1975; NO 175; PP. 8-10; ABS. ANGL.; BIBL. 5 REF.Article

ELECTROCHROMIC IRIDIUM OXIDE FILMS PREPARED BY REACTIVE SPUTTERINGSCHIAVONE LM; DAUTREMONT SMITH WC; BENI G et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 10; PP. 823-825; BIBL. 7 REF.Article

EVALUATION OF IMPURITIES IN REACTIVE SPUTTERED TIN FILMHATANO T; UEMURA Y; UCHIDA K et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 11; PP. L141-L143; BIBL. 6 REF.Article

REALISATION DE COUCHES MINCES SEMI-CONDUCTRICES DU TYPE III-V A BASE D'AZOTE PAR PULVERISATION CATHODIQUE REACTIVE.PUYCHEVRIER N; MENORET M; CACHARD M et al.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 99-103; ABS. ANGL.; BIBL. 3 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

CRYSTAL STRUCTURE OF REACTIVE SPUTTERED SILVER FILMS AND THERMAL DESORPTION OF OXYGEN FROM THESE FILMS.TANAKA S; ABE T; YAMASHINA T et al.1974; CHEM. LETTERS; JAP.; DA. 1974; NO 6; PP. 599-602; BIBL. 6 REF.Article

IMPROVEMENT OF TANTALUM NITRIDE RESISTOR FILM STABILITY THROUGH ANALYSIS ON PLATEAU PHENOMENANAKAMURA M; FUJIMORI M; NISHIMURA Y et al.1973; JAP. J. APPL. PHYS.; JAP.; DA. 1973; VOL. 12; NO 1; PP. 30-39; BIBL. 9 REF.Serial Issue

PROTON IRRADIATION AT 30OK AND ISOCHRONAL ANNEALING OF REACTIVELY SPUTTERED TA THIN-FILM RESISTORSSHEWCHUN J; HARDY WR; PRONKO PP et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 4915-4921; BIBL. 15 REF.Serial Issue

IN-LINE PRODUCTION SYSTEM FOR SPUTTER DEPOSITION OF GRADED INDEX SOLAR ABSORBING FILMSMCKENZIE DR; WINDOW B; HARDING GL et al.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 93-95; BIBL. 8 REF.Article

DIELECTRIC PROPERTIES OF FILMS PREPARED BY THE REACTIVE SPUTTERING OF TA IN O2/N2 MIXTURES.INGREY SJ; WESTWOOD WD; MACLAURIN BK et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 377-381; BIBL. 18 REF.Article

EFFECTS OF DEPOSITION TEMPERATURES ON TA THIN FILM RESISTORS REACTIVELY SPUTTERED IN OXYGENHARDY WR; MILLS D.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 303-306; BIBL. 18 REF.Serial Issue

FABRICATION ET PROPRIETES ELECTRIQUES DES STRUCTURES SI-ALN-ALMIRSH S; RAJMER G.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 40-45; BIBL. 6 REF.Serial Issue

STRUCTURE AND PROPERTIES OF RF SPUTTERED ZNO TRANSDUCERSFAHMY AH; ADLER EL.1972; I.E.E.E. TRANS. SONICS ULTRASON.; U.S.A.; DA. 1972; VOL. 19; NO 3; PP. 346-349; BIBL. 14 REF.Serial Issue

ETUDE PAR SPECTROMETRIE DE MASSE DE LA PULVERISATION CATHODIQUE REACTIVE HAUTE FREQUENCESHINOKI F.1977; BULL. ELECTROTECH. LAB.; JAP.; DA. 1977; VOL. 41; NO 8; PP. 64-70; ABS. ANGL.; BIBL. 16 REF.Article

EFFECT OF A SECONDARY PASSIVATING FILM OF SIO2 DEPOSITED BY CATHODE SPUTTERING ON THE PARAMETERS OF PLANAR TRANSISTORS.ORLINOV VI; GORANCHEV BG; HRISTOV DK et al.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 3; PP. 236-246; ABS. RUSSE; BIBL. 7 REF.Article

REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATESHORWITZ CM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1320-1323; BIBL. 10 REF.Article

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