Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogensSRIVASTAVA, G. P; ALZAHRANI, A. Z; USANMAZ, D et al.Applied surface science. 2012, Vol 258, Num 21, pp 8377-8386, issn 0169-4332, 10 p.Conference Paper

Interface analysis of pure Sn, pure Ag and Sn-Ag binary alloys in H₂SO₄AMEER, M. A; GHONEIM, A. A; HEAKAL, F et al.Surface and interface analysis. 2010, Vol 42, Num 2, pp 95-101, issn 0142-2421, 7 p.Article

Conductive properties of foam and cluster structures created from hexanthiol-passivated gold nanoparticlesPLAZA, J. L; CARCELEN, V.Applied surface science. 2009, Vol 255, Num 12, pp 6164-6167, issn 0169-4332, 4 p.Article

Surface passivation technology for III-V semiconductor nanoelectronicsHASEGAWA, Hideki; AKAZAWA, Masamichi.Applied surface science. 2008, Vol 255, Num 3, pp 628-632, issn 0169-4332, 5 p.Conference Paper

Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatmentKUMBHAR, Alka A; SUNIL KUMAR SINGH; DUSANE, R. O et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 329-331, issn 0040-6090, 3 p.Conference Paper

Selective dry etching of (Sc₂O₃)_x(Ga₂O₃)_1-x gate dielectrics and surface passivation films on GaNHLAD, M; VOSS, L; GILA, B. P et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 680-684, issn 0361-5235, 5 p.Article

Micro-Raman spectroscopy of disordered and ordered sulfur phases on a passivated GaAs surfaceBLACHOWIXZ, T; SALVAN, G; ZAHN, D. R. T et al.Applied surface science. 2006, Vol 252, Num 21, pp 7642-7646, issn 0169-4332, 5 p.Conference Paper

Passivation properties of OLEDs with aluminum cathodes prepared by ion-beam-assisted deposition processSOON MOON JEONG; WON HOI KOO; SANG HUN CHOI et al.Applied surface science. 2005, Vol 241, Num 3-4, pp 352-361, issn 0169-4332, 10 p.Article

Surface film formation on a graphite electrode in Li-ion batteries : AFM and XPS studyLEROY, S; BLANCHARD, F; DEDRYVERE, R et al.Surface and interface analysis. 2005, Vol 37, Num 10, pp 773-781, issn 0142-2421, 9 p.Article

Characterization of oxygen passivated iron nanoparticles and thermal evolution to γ-Fe₂O₃ROJAS, T. C; SANCHEZ-LOPEZ, J. C; GRENECHE, J. M et al.Journal of materials science. 2004, Vol 39, Num 15, pp 4877-4885, issn 0022-2461, 9 p.Article

Passivation process for superfine aluminum powders obtained by electrical explosion of wiresKWON, Young-Soon; GROMOV, Alexander A; ILYIN, Alexander P et al.Applied surface science. 2003, Vol 211, Num 1-4, pp 57-67, issn 0169-4332, 11 p.Article

Electronic properties of sulfur passivated undoped-n⁺ type GaAs surface studied by photoreflectancePENG JIN; PAN, S. H; LI, Y. G et al.Applied surface science. 2003, Vol 218, Num 1-4, pp 210-214, issn 0169-4332, 5 p.Article

Direct image observation of the initial forming of passive thin film on stainless steel surface by PEEMKANG, Tai-Hee; KYUWOOK IHM; PARK, Chong-Yun et al.Applied surface science. 2003, Vol 212-13, pp 630-635, issn 0169-4332, 6 p.Conference Paper

Modification of GaAs(1 0 0) and GaN(0 0 0 1) surfaces by treatment in alcoholic sulfide solutionsKONENKOVA, Elena V.Vacuum. 2002, Vol 67, Num 1, pp 43-52, issn 0042-207X, 10 p.Conference Paper

Characteristics of interfacial bonding distribution of Gd₂O₃-GaAs structureYANG, Jun-Kyu; KANG, Min-Gu; PARK, Hyung-Ho et al.Vacuum. 2002, Vol 67, Num 1, pp 161-167, issn 0042-207X, 7 p.Conference Paper

Surface passivation by dissociative molecular adsorptionSRIVASTAVA, G. P.Vacuum. 2002, Vol 67, Num 1, pp 11-20, issn 0042-207X, 10 p.Conference Paper

Hydrogen plasma passivation of bulk GaAs and Al_0.3Ga_0.7As/GaAs multiple-quantum-well structures on Si substratesWANG, G; OGAWA, T; KUNIMASA, F et al.Journal of electronic materials. 2001, Vol 30, Num 7, pp 845-849, issn 0361-5235Article

Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic propertiesSOPORI, Bhushan; YI ZHANG; RAVINDRA, N. M et al.Journal of electronic materials. 2001, Vol 30, Num 12, pp 1616-1627, issn 0361-5235Conference Paper

Surface analytical study of the corrosion behaviour of chromate passivated Al 2014 A T-6 during salt fog exposureTREACY, G. M; WILCOX, G. D.Applied surface science. 2000, Vol 157, Num 1-2, pp 7-13, issn 0169-4332Article

Passivation of α-Fe nanoparticle by epitaxial γ-Fe₂O₃ shellFUNG, K. K; BOXIONG QIN; ZHANG, X. X et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2000, Vol 286, Num 1, pp 135-138, issn 0921-5093Conference Paper

Electrochemical and analytical (XPS and AES) study of passive layers formed on Fe-Ni alloys in borate solutionsBASILE, F; BERGNER, J; BOMBART, C et al.Surface and interface analysis. 2000, Vol 30, Num 1, pp 154-157, issn 0142-2421Conference Paper

In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layerTAKAHASHI, Hiroshi; HASEGAWA, Hideki.Applied surface science. 2000, Vol 166, pp 526-531, issn 0169-4332Conference Paper

The interface formation of PTCDA on Se-modified GaAs(100) surfacesPARK, S; QUERNER, T; KAMPEN, T. U et al.Applied surface science. 2000, Vol 166, pp 376-379, issn 0169-4332Conference Paper

Photoemission study of the interface reaction between Ag and H₂S treated InP(001)SLOBOSHANIN, S; GEBHARDT, R. K; SCHAEFER, J. A et al.Surface science. 1999, Vol 431, Num 1-3, pp 252-259, issn 0039-6028Article

The (3 x 3) reconstruction and its evolution during the nitridation of GaAs(001)LU, J; WESTWOOD, D. I; HAWORTH, L et al.Thin solid films. 1999, Vol 343-4, pp 567-570, issn 0040-6090Conference Paper