Forty years of Moore's Law : ever smaller transistors and ever larger wafersDAN HUTCHESON, G.Proceedings - Electrochemical Society. 2006, pp 3-9, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 7 p.Conference Paper

An experimental study of megasonic cleaning of silicon wafersBUSNAINA, A. A; KASHKOUSH, I. I; GALE, G. W et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 8, pp 2812-2817, issn 0013-4651Article

Silicon direct bonding for sensor applications : characterization of the bond qualityHARENDT, C; HÖFFLINGER, B; GRAF, H.-G et al.Sensors and actuators. A, Physical. 1991, Vol 25, Num 1-3, pp 87-92Article

Development of a Novel Methodology for Effective Partial die Inspection and MonitoringLEE, Byoung-Ho; LEE, Tae-Yong; CROSS, Andrew et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7272, issn 0277-786X, isbn 978-0-8194-7525-1 0-8194-7525-4, 72723K.1-72723K.6, 2Conference Paper

The challenge to record correct fast WLR monitoring data from productive wafers and to set reasonable limitsMARTIN, Andreas; FAZEKAS, Josef; PIETSCH, Andreas et al.IEEE international reliability physics symposium. 2004, pp 661-662, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

The challenge of ultra thin chip assemblyFEIL, Michael; ADLER, Cliff; HEMMETZBERGER, Dieter et al.Proceedings - Electronic Components Conference. 2004, issn 0569-5503, isbn 0-7803-8365-6, 2Vol, Vol 1, 35-40Conference Paper

Front end compatible wafer level CSP-technology for FR- and HT-applicationsBURGER, Klaus.SPIE proceedings series. 2003, pp 714-718, isbn 0-8194-5189-4, 5 p.Conference Paper

VLSI reliability challenges : from device physics to wafer scale systemsTAKEDA, E; IKUZAKI, K; KATTO, H et al.Proceedings of the IEEE. 1993, Vol 81, Num 5, pp 653-674, issn 0018-9219Article

A test methodology for wafer scale systemsLANDIS, D. L.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 1, pp 76-82, issn 0278-0070Article

Experimental study of NH₃-O₂ oxidation of si watersYEN-CHUAN TSENG; SHONO, K.Japanese journal of applied physics. 1991, Vol 30, Num 2A, pp L222-L223, issn 0021-4922, 2Article

A simple pre-exposure treatment to improve post-develop photoresist step coverageNAGASWAMI, V; CARLSON, R.Journal of the Electrochemical Society. 1984, Vol 131, Num 6, pp 1369-1372, issn 0013-4651Article

Inspectability of PSM masks for the 32nm node using STARlight2+HUANG, Chain-Ting; CHENG, Yung-Feng; KUO, Shih-Ming et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7028, pp 70282P.1-70282P.8, issn 0277-786X, isbn 978-0-8194-7243-4 0-8194-7243-3, 2Conference Paper

Water usage reduction in a semiconductor fabricatorKLUSEWITZ, Greg; MC VEIGH, Jim.ASMC proceedings. 2002, pp 340-346, issn 1078-8743, isbn 0-7803-7158-5, 7 p.Conference Paper

Introduction of new techniques for matching overlay enhancementKIKUCHI, Takahisa; ISHII, Yuuki; TOKUDA, Noriaki et al.SPIE proceedings series. 2001, pp 1608-1616, isbn 0-8194-4032-9, 2VolConference Paper

Aerial image sensor for self-calibration of wafer steppersHAGIWARA, Tsuneyuki; MIZUTANI, Hideo; KONDO, Naoto et al.SPIE proceedings series. 2001, pp 1635-1643, isbn 0-8194-4032-9, 2VolConference Paper

Formation of pyramids at surface of TMAH etched siliconCHOI, W. K; THONG, J. T. L; LUO, P et al.Applied surface science. 1999, Vol 144-45, pp 472-475, issn 0169-4332Conference Paper

Effects of drying methods and wettability of silicon on the formation of water marks in semiconductor processingJIN-GOO PARK; PAS, M. F.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2028-2031, issn 0013-4651Article

Shuttle fabrication for designs with lifted I/OsLIN, Rung-Bin; WU, Meng-Chiou; TSAI, Shih-Cheng et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67305C.1-67305C.10, issn 0277-786X, isbn 978-0-8194-6887-1Conference Paper

Interrupt reduction by triggering of maintenance activities using APC machine alarm analysisBRÜGGEMANN, Michael.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 57-60, isbn 0-7803-8312-5, 1Vol, 4 p.Conference Paper

Issues for the larger diameter epitaxial waferIMAI, M; MAYUSUMI, M; INOUE, K et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 109-115, issn 0167-9317Conference Paper

Current trends in silicon defect technologyBULLIS, W. M.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 93-98, issn 0921-5107Conference Paper

Thermal properties of semiconductor wafers heated locally by Nd:YAG laser beamKAWAMURA, T.NEC research & development. 1988, Num 91, pp 1-10, issn 0547-051XArticle

Feed forward test methodology utilizing device identificationCABBIBO, A; CONDER, J; JACOBS, M et al.International Test Conference. 2004, pp 655-660, isbn 0-7803-8580-2, 1Vol, 6 p.Conference Paper

Analysis of wafer process duration for ab initio calculation of capacity, throughput and bottleneck equipments in a wafer fabETZEL, H; STAUDT, P; OERTEL, H et al.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 330-333, isbn 0-7803-8312-5, 1Vol, 4 p.Conference Paper

Trace metal contamination analysis of the bevel and edge exclusion area on starting siliconSPARKS, Chris M; BEEBE, Meredith R.Proceedings - Electrochemical Society. 2004, pp 329-333, issn 0161-6374, isbn 1-56677-418-7, 5 p.Conference Paper