Multiple-gate silicon-on-insulator MOS transistorsCOLINGE, Jean-Pierre.Proceedings - Electrochemical Society. 2003, pp 2-17, issn 0161-6374, isbn 1-56677-389-X, 16 p.Conference Paper

Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°CBELLODI, Marcello; MARTINO, Joao Antonio.Proceedings - Electrochemical Society. 2003, pp 87-94, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Low temperature electronics: From fundamental physics to emerging silicon technologiesCLAEYS, C; SIMOEN, E.Proceedings - Electrochemical Society. 2003, pp 96-111, issn 0161-6374, isbn 1-56677-389-X, 16 p.Conference Paper

An improved current model for edgeless SOI MOSFETsGIACOMINI, Renato; MARTINO, Joao Antonio.Proceedings - Electrochemical Society. 2003, pp 68-76, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

High quality emitter silicon solar cellsSTEM, N; CID, M.Proceedings - Electrochemical Society. 2003, pp 180-185, issn 0161-6374, isbn 1-56677-389-X, 6 p.Conference Paper

The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°CBELLODI, M; MARTINO, J. A.Proceedings - Electrochemical Society. 2003, pp 28-37, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Performance analysis of single-electron winner-take-all network circuitsGUIMARAES, Janaina; CAMARGO DA COSTA, José.Proceedings - Electrochemical Society. 2003, pp 120-129, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Numerical analysis of the quantum stub transistorGUERRA, Alexandre B; SANTOS, Edval J. P.Proceedings - Electrochemical Society. 2003, pp 197-204, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

A layout compactor using a virtual grid representation and independent hardware platformMOURA, L. G; ANIDO, M. L; OLIVEIRA, C. E. T et al.Proceedings - Electrochemical Society. 2003, pp 222-232, issn 0161-6374, isbn 1-56677-389-X, 11 p.Conference Paper

Comb-shape microresonators modeling for microelectromechanical filter synthesisVASSOLER, Jakson M; FONSECA, Jun S. O; ITURRIOZ, Ignacio et al.Proceedings - Electrochemical Society. 2003, pp 233-240, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H filmsOLIVEIRA, A. R; CARRENO, M. N. P.Proceedings - Electrochemical Society. 2003, pp 267-274, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperaturesPAVANELLO, M. A; MARTINO, J. A; SIMOEN, E et al.Proceedings - Electrochemical Society. 2003, pp 112-119, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Characterization of electrospinning process using blends of polyacrylonitrile and carbon particlesDA SILVA, A. N. R; FURLAN, R; RAMOS, I et al.Proceedings - Electrochemical Society. 2003, pp 284-291, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operationDER AGOPIAN, Paula Ghedini; PAVANELLO, Marcelo Antonio; MARTINO, Joao Antonio et al.Proceedings - Electrochemical Society. 2003, pp 77-86, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

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Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETsFALCE DE ALMEIDA, Galba; SIRLEY NICOLETT, Aparecido; MARTINO, Joao Antonio et al.Proceedings - Electrochemical Society. 2003, pp 58-67, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

ESD defect localization and analysis using pulsed OBIC techniquesBEAUCHENE, T; LEWIS, D; TREMOUILLES, D et al.Proceedings - Electrochemical Society. 2003, pp 156-165, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Low operating voltage of an ITO/MEH-PPV/Al light emmiting deviceNEVES, J. A. R; DIRANI, E. A. T; SANTOS, E. R et al.Proceedings - Electrochemical Society. 2003, pp 173-179, issn 0161-6374, isbn 1-56677-389-X, 7 p.Conference Paper

Effects of C₂H₂ gas content on the characteristics of DLC films deposited by magnetron sputteringLIBARDI, J; MASSI, M; OTANI, C et al.Proceedings - Electrochemical Society. 2003, pp 349-356, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Porous silicon processing for enhancing thin silicon membranes fabricationDANTAS, Michel O. S; GALEAZZO, Elisabete; PERES, Henrique E. M et al.Proceedings - Electrochemical Society. 2003, pp 406-414, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

Influence of RF frequency on production of adsorbent organic films by PECVDNASCIMENTO, A. P; HAMANAKA, C; JESUS, D. P et al.Proceedings - Electrochemical Society. 2003, pp 380-388, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

Orientation-dependent anisotropic etching simulation in silicon waferNELI, Roberto R; DOI, Ioshiaki; RIBAS, Renato P et al.Proceedings - Electrochemical Society. 2003, pp 389-397, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

Electrochemical process for silicon tips fabricationDANTAS, Michel O. S; GALEAZZO, Elisabete; PERES, Henrique E. M et al.Proceedings - Electrochemical Society. 2003, pp 445-452, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Photoconductivity of semi-insulating polysiliconGARROTE LANTIN, Daniela; ONODA, Edyr; DA SILVA ZAMBOM, Luis et al.Proceedings - Electrochemical Society. 2003, pp 340-348, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

Selective silicon nitride etching by ECR plasmas using SF₆and NF₃ based gas mixturesREYES-BETANZO, C; MOSHKALYOV, S. A; RAMOS, A. C. S et al.Proceedings - Electrochemical Society. 2003, pp 292-301, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper