CRYSTAL-GROWING IN SPACE: SIGNIFICANCE STILL UP IN THE AIR.ROBINSON AL.1975; SCIENCE; U.S.A.; DA. 1975; VOL. 187; NO 4176; PP. 527-528; BIBL. 1 REF.Article

Size and perfection of crystals in lake iceBARNS, R. L; LAUDISE, R. A.Journal of crystal growth. 1985, Vol 71, Num 1, pp 104-110, issn 0022-0248Article

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TRICHITES D'OXYDE DE MAGNESIUM ET LEURS PROPRIETESMETUSHEVSKIJ AS; VLASOV AS; TIMASHEV VV et al.1975; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1975; NO 1; PP. 54-56; BIBL. 4 REF.Article

CROISSANCE SELON UNE TECHNIQUE ZONE FLOTTEE AMELIOREE DE MONOCRISTAUX DE SILICIUM SANS OXYGENE, DE HAUTE PERFECTION CRISTALLINE ET DE GRAND DIAMETRE.BOUCHAUD JP.1974; DGRST-7371352; FR.; DA. 1974; PP. (45P.); BIBL. 3 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES MATER.)Report

METHODE D'EVALUATION DE LA QUALITE DES MONOCRISTAUX DE SI A FACES SOUS PETITS ANGLESTUROVSKIJ BM; LAJNER LV.1974; ZAVODSK. LAB.; S.S.S.R.; DA. 1974; VOL. 40; NO 6; PP. 695-697; BIBL. 3 REF.Article

TAUX DE POLARISATION EN FONCTION DE L'INTENSITE INTEGREE DES RAYONS X DIFFUSES PAR LES CRISTAUX DE GERMANIUMOLEKHNOVICH NM.1974; DOKL. AKAD. NAUK B.S.S.R.; S.S.S.R.; DA. 1974; VOL. 18; NO 8; PP. 696-699; BIBL. 10 REF.Article

ION CHANNELING STUDIES OF THE CRYSTALLINE PERFECTION OF EPITAXIAL LAYERSPICRAUX ST.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 587-593; BIBL. 21 REF.Serial Issue

X-RAY PERFECTION AND RESIDUAL DEFECTS IN GADOLINIUM GALLIUM GARNET SUBSTRATESBELT RF; MOSS JP; LATORE JR et al.1973; MATER. RES. BULL.; U.S.A.; DA. 1973; VOL. 8; NO 4; PP. 357-367; BIBL. 11 REF.Serial Issue

INFLUENCE DE LA VITESSE DE CRISTALLISATION SUR LA STRUCTURE DE MONOCRISTAUX DE CORINDONKLYSIK A; JANUSZ C; SZYMANSKI J et al.1972; RUDY METALE NIEZELAZNE; POLSKA; DA. 1972; VOL. 17; NO 7; PP. 282-288; ABS. RUSSE ANGL. FR. ALLEM.; BIBL. 13 REF.Serial Issue

INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES.DE ROCK AJR; FERRIS SD; KIMERLING LC et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 313-315; BIBL. 12 REF.Article

ELABORATION DE CREUSETS SIC/GRAPHITE. TIRAGE ET CARACTERISATION DES LINGOTS DE SILICIUM.ELSTON J; VERDONE M; SPITZ JP et al.1975; DGRST-7371354; FR.; DA. 1975; PP. (15P.); H.T. 38; BIBL. 4 REF.; (RAPP. FINAL ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

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THE GROWTH AND PERFECTION OF PHENANTHRENE SINGLE CRYSTALS. I. PURIFICATION AND SINGLE CRYSTAL GROWTH.MCARDLE BJ; SHERWOOD JN; DAMASK AC et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 3; PP. 193-200; BIBL. 26 REF.Article

MELT GROWTH OF CRYSTALLINE SILICON TUBES BY A CAPILLARY ACTION SHAPING TECHNIQUE.CISZEK TF.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 2; PP. 521-527; ABS. ALLEM.; BIBL. 9 REF.Article

RECRYSTALLIZATION OF THERMALLY EVAPORATED CDS FILMS VIA AN H₂S HEAT-TREATMENT PROCESS.FRAAS LM; BLEHA WP; BRAATZ P et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 491-495; BIBL. 17 REF.Article

PENETRATION DES DEFAUTS DANS LES MONOCRISTAUX DE SILICIUM OBTENUS PAR LA METHODE CZOCHRASKISIROTA NN; DENIS VA; UNYARKHA LS et al.1975; DOKL. AKAD. NAUK B.S.S.R.; S.S.S.R.; DA. 1975; VOL. 19; NO 4; PP. 320-323; BIBL. 10 REF.Article

ANWENDUNG DER UMWEGANREGUNG FUER DIE BESTIMMUNG DER GUETE VON KRISTALLOBERFLAECHEN. = UTILISATION DE L'EXCITATION INDIRECTE POUR LA DETERMINATION DE LA BONNE QUALITE DES SURFACES CRISTALLINESMELLE W.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 5; PP. 511-515; ABS. ANGL.; BIBL. 6 REF.Article

LITHIUM HYDRIDE SINGLE CRYSTALSHOLCOMBE CE JR; JOHNSON DH.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 19; NO 1; PP. 53-57; BIBL. 19 REF.Serial Issue

MELT GROWTH.HURLE DTJ.1973; NORTH-HOLL. SER. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 1; PP. 210-247; BIBL. 36 REF.; (CRYST. GROWTH. INT. SUMMER SCH.; NOORDWIJKERHOUT, NETH.; 1971)Conference Paper