Magnetic susceptibility of compensated Si:PMORI, T; SHIMAZU, Y; IKEHATA, S et al.Solid state communications. 1994, Vol 91, Num 1, pp 13-15, issn 0038-1098Article

Observation of substitutional and interstitial phosphorus on clean Si(100)-(2×1) with scanning tunneling microscopyBROWN, Geoffrey W; UBERUAGA, Bias P; GRUBE, Holger et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195323.1-195323.5, issn 1098-0121Article

Oxynitridation-enhanced diffusion of phosphorus in <100> siliconCHEN, N. K; CHIAPYING LEE.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2051-2054, issn 0013-4651Article

Scanning tunneling microscopy investigation of phosphorus-doped polycrystalline silicon filmsGONZO, L; LUI, A; BISERO, D et al.Materials letters (General ed.). 1993, Vol 18, Num 1-2, pp 50-56, issn 0167-577XArticle

Corrosion behaviour of sintered 434L ferritic stainless steel-Al₂O₃ composites containing phosphorus = Comportement à la corrosion des composites acier inoxydable ferritique 434L fritté-Al₂O₃, contenant du phosphoreMUKHERJEE, S. K; UPADHYAYA, G. S.Corrosion science. 1985, Vol 25, Num 7, pp 463-470, issn 0010-938XArticle

Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in siliconYOSHIDA, M; KAMIURA, Y; TSURUNO, R et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 128-131, issn 0022-0248Conference Paper

Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parametersGHADERI, K; HOBLER, G.Journal of the Electrochemical Society. 1995, Vol 142, Num 5, pp 1654-1658, issn 0013-4651Article

A 3N rule for the electronic properties of doped grapheneZHOU, Ye-Cheng; ZHANG, Hao-Li; DENG, Wei-Qiao et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 22, issn 0957-4484, 225705.1-225705.7Article

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporationKOCINIEWSKI, T; BARJON, J; SAGUY, C et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 12, pp 3136-3141, issn 1862-6300, 6 p.Conference Paper

Dislocation of high quality P-doped ZnTe substrate examined by X-ray topographyYOSHINO, K; KAKENO, T; YONETA, M et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 7, pp 445-448, issn 0957-4522, 4 p.Conference Paper

Field emission characteristics of phosphorus-doped homoepitaxial diamond filmsKIMURA, C; KURIYAMA, K; KOIZUMI, S et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 295-298, issn 0169-4332Conference Paper

Influence of extended defects and native impurities on external gettering in polycrystalline siliconEHRET, E; ALLAIS, V; VALLARD, J.-P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 210-215, issn 0921-5107Article

The effect of production conditions for in situ phosphorus-doped LPCVD polysilicon in monosilane/phosphine system on the deposition process kineticsTURTSEVICH, A. S; KRASNITSKY, V. Y; EMELYANOV, V. A et al.Thin solid films. 1994, Vol 248, Num 1, pp 28-31, issn 0040-6090Article

Highly efficient metal-free phosphorus-doped platelet ordered mesoporous carbon for electrocatalytic oxygen reductionYANG, Dae-Soo; BHATTACHARJYA, Dhrubajyoti; MIN YOUNG SONG et al.Carbon (New York, NY). 2014, Vol 67, pp 736-743, issn 0008-6223, 8 p.Article

Conduction-band tight-binding description for Si applied to P donorsMARTINS, A. S; BOYKIN, Timothy B; KLIMECK, Gerhard et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 193204.1-193204.4, issn 1098-0121Article

Formation of p-n junctions in high-purity germanium by phosphorus ion implantationDEVYATYKH, G. G; VASIL'EV, V. K; GAVVA, V. A et al.Inorganic materials. 1996, Vol 32, Num 12, pp 1258-1261, issn 0020-1685Article

Investigation of micro-segregation in Incoloy 903WANG, A. C; LI, Y. Y; FAN, C. G et al.Materials letters (General ed.). 1994, Vol 19, Num 5-6, pp 251-255, issn 0167-577XArticle

High-resistivity n-type silicon prepared by Czochralski growth and untraditional dopingSAL'NIK, Z. A.Inorganic materials. 1998, Vol 34, Num 3, pp 197-200, issn 0020-1685Article

Self-organization as a means to suppress and control defect formation in siliconGUBENKO, A. Y.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 1-2, pp 100-103, issn 0921-5107Article

Hydrogen passivation of donors and hydrogen states in heavily doped n-type siliconFUKATA, N; SASAKI, S; FUJIMURA, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 7, pp 3937-3941, issn 0021-4922, 1Article

Electron emission by current injection from n-type diamond film surface with negative electron affinityTAKEUCHI, D; MAKINO, T; KATO, H et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 9, pp 2093-2098, issn 1862-6300, 6 p.Conference Paper

³¹P Knight shifts and spin dynamics in Si:P at temperatures comparable to the Fermi temperatureHOCH, M. J. R; HOLCOMB, D. F.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 3, pp 035115.1-035115.6, issn 1098-0121Article

Effect of phosphorus on the magnetic properties of non-oriented electrical steel containing 0.8 wt% siliconPARK, J. T; WOO, J. S; CHANG, S. K et al.Journal of magnetism and magnetic materials. 1998, Vol 182, Num 3, pp 381-388, issn 0304-8853Article

Effect of phosphorus impurity on the lattice parameter of diamondVORONOV, O. A; RAKHMANINA, A. V.Inorganic materials. 1997, Vol 33, Num 3, pp 261-263, issn 0020-1685Article

Scaling behavior of the Hall coefficient of Si:P at the metal-insulator transitionMADEL, O; SCHLAGER, H. G; LÖHNEYSEN, H. V et al.Zeitschrift für Physik. B, Condensed matter. 1997, Vol 102, Num 4, pp 473-478, issn 0722-3277Article