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Results 1 to 25 of 11937

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Dispersive and nondispersive transport in amorphous semiconductors in presence of bias illuminationZELDOV, E; WEISER, K.Physical review letters. 1984, Vol 53, Num 10, pp 1012-1015, issn 0031-9007Article

PARTICULARITES DE L'EFFET PHOTOREFRINGENT DANS LES CRISTAUX A PHOTOCONDUCTION BIPOLAIRESTEPANOV SI.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2114-2116; BIBL. 9 REF.Article

The influence of light intensity on surface recombination in GaS single crystalsSZALAJKO, Maria; NOWAK, Marian.Applied surface science. 2007, Vol 253, Num 7, pp 3636-3641, issn 0169-4332, 6 p.Article

Study of photoconductivity and photoluminescence of organic/porous silicon complexesYUE ZHAO; DONGSHENG LI; WENBIN SANG et al.Applied surface science. 2007, Vol 253, Num 10, pp 4566-4569, issn 0169-4332, 4 p.Article

Photoconductive sensitivity and trap depths of the sublimated dye filmsNAKATSUI, H; HISHIKI, Y.Journal of Photographic Science. 1983, Vol 31, Num 6, pp 221-225, issn 0022-3638Article

Photostimulated charge carrier transport in a polydiacetylene single crystal (PTS)BLUM, T; RIES, B; BASSLER, H et al.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 19, pp 3659-3668, issn 0022-3719Article

Photoconductive properties of cadmium selenide encapsulated in polymersHAGA, Y; WATANABE, T; YOSOMIYA, R et al.Zairyo. 1991, Vol 40, Num 455, pp 1105-1110, issn 0514-5163Article

Dynamical XPS measurements for probing photoinduced voltage changesSEZEN, Hikmet; SUZER, Sefik.Surface science. 2010, Vol 604, Num 21-22, issn 0039-6028, L59-L62Article

Rapid photoresponse of single-crystalline selenium nanobeltsAIMIAO QIN; ZHOU LI; RUSEN YANG et al.Solid state communications. 2008, Vol 148, Num 3-4, pp 145-147, issn 0038-1098, 3 p.Article

Negative photoconductivity in selenium single crystalsISAEV, A. I; GUSEINOV, T. M; MEKHTIEVA, S. D et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp K87-K90, issn 0031-8965Article

Carrier generation and transport in crocetin crystals in a sandwich cell: steady state semi- and photoconductivity measurementsPRABIR PAL; MISRA, T. N.Journal of physics. D, Applied physics (Print). 1989, Vol 22, Num 9, pp 1358-1363, issn 0022-3727, 6 p.Article

Photoluminescent properties of p-GaAs electrodes related to the photocurrent anomaly: determination of surface electron-capture velocities and depletion widths in photoelectrochemical cellsJOHNSON, P. B; MCMILLAN, C. S; ELLIS, A. B et al.Journal of applied physics. 1987, Vol 62, Num 12, pp 4903-4908, issn 0021-8979Article

Hopping photoconduction in doped silicon in the presence of a microwave electric fieldPOKROVSKII, Ya. E; KHVAL'KOVSKII, N. A.Journal of communications technology & electronics. 2003, Vol 48, Num 9, pp 1030-1038, issn 1064-2269, 9 p.Article

Hydrogenated amorphous boron: transient and steady photoconductivitySCHAFFER, J. P; PARK, H; LIND, J. H et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp K51-K55, issn 0031-8965Article

Photoconductance transient response in polycrystalline siliconPOON, E; HWANG, W; YANG, E. S et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 338-344, issn 0021-8979Article

MECANISME DE LA PHOTOCONDUCTIVITE NEGATIVE DE ZNORUVINSKIJ MA.1978; UKRAIN. FIZ. ZH.; UKR; DA. 1978; VOL. 23; NO 12; PP. 2000-2002; ABS. ENG; BIBL. 16 REF.Article

Photoconductivity decay kinetics in silver bromide photographic filmsDERI, R. J; SPOONHOWER, J. P; HAMILTON, J. F et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 1968-1970, issn 0021-8979Article

TRANSIENT PHOTOCURRENT IN DIELECTRICS.RUDENKO AI.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 1; PP. 1-16; BIBL. 11 REF.Article

Spin-dependent negative photoconductivity in siliconBAGRAEV, N. T; MASHKOV, V. A; POLOSKIN, D. S et al.Solid state communications. 1985, Vol 55, Num 9, pp 791-793, issn 0038-1098Article

The decay rate of transient photocurrents in semiconductorsHALPERN, V.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 4, pp L75-L79, issn 0141-8637Article

INVERSEUR DE SIGNE DU PHOTOCOURANT COMMANDE PAR LA POLARISATION DANS LES SEMICONDUCTEURS ANISOTROPESMEDVEDKIN GA; RUD YU V.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 1952-1958; BIBL. 7 REF.Article

Excitation of polyethylene by visible lightGŁUCHOWSKI, S.Journal of physics. D, Applied physics (Print). 1987, Vol 20, Num 4, pp 555-557, issn 0022-3727Article

The role of oxygen species in photoconduction of surface oxidized Ge filmsSUNADA, J; HASHIMOTO, Y; OISHI, K et al.Physics letters. A. 1990, Vol 151, Num 8, pp 447-451, issn 0375-9601Article

Preparation and properties of SnS film grown by two-stage processFENG JIANG; HONGLIE SHEN; CHAO GAO et al.Applied surface science. 2011, Vol 257, Num 11, pp 4901-4905, issn 0169-4332, 5 p.Article

Application of optical and luminescent techniques to the characterization of oxide thin filmsHAO, J. H; GAO, J.Applied surface science. 2006, Vol 252, Num 15, pp 5590-5593, issn 0169-4332, 4 p.Conference Paper

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