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High response organic deep ultraviolet photodetector with PEDOT:PSS anodeLU ZHU; QIAN DAI; HU, Zuo-Fu et al.Optics letters. 2011, Vol 36, Num 10, pp 1821-1823, issn 0146-9592, 3 p.Article

Cavity-enhanced multispectral photodetector using phase-tuned propagation: theory and designJIANFEI WANG; JUEJUN HU; XIAOCHEN SUN et al.Optics letters. 2010, Vol 35, Num 5, pp 742-744, issn 0146-9592, 3 p.Article

THz-photomixers - : An overviewSTÖHR, Andreas; JÄGER, Dieter.Proceedings of SPIE, the International SOciety for Optical Engineering. 2006, pp 61409D.1-61940D.8, issn 0277-786X, isbn 0-8194-6250-0, 1VolConference Paper

Comment on : performance limintations of GaAs/AIGaAs infrared superlattices . ReplyLEVINE, B. F; KINCH, M. A; YARIV, A et al.Applied physics letters. 1990, Vol 56, Num 23, pp 2354-2356, issn 0003-6951Article

Ultra-high sensitivity photodetector arrays with integrated amplification and passivation nano-layersJIE YAO; MOKINA, Irina A; HUNT, Jeffrey H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7598, issn 0277-786X, isbn 0-8194-7994-2 978-0-8194-7994-5, 1Vol, 759812.1-759812.8Conference Paper

Experimental study on tunable external cavity photodetectorsXIAOMIN REN; KAI LIU; YONGQING HUANG et al.Optical materials (Amsterdam). 2000, Vol 14, Num 3, pp 243-246, issn 0925-3467Conference Paper

Dark current suppression in an erbium―germanium― erbium photodetector with an asymmetric electrode areaPARK, Jin-Hong; YU, Hyun-Yong.Optics letters. 2011, Vol 36, Num 7, pp 1182-1184, issn 0146-9592, 3 p.Article

Etude expérimentale de l'ionisation par impact dans Ga1-xAlxSb élaboré par épitaxie en phase liquide 0×0,08 = Experimental study of impact ionisation in Ga1-xAlxSb grown by liquid phase 0<x<0,08Karim, Meriem; Luquet, H.1992, 132 p.Thesis

Spatially encoded multibeam laser Doppler vibrometry using a single photodetectorFU, Y; GUO, M; PHUA, P. B et al.Optics letters. 2010, Vol 35, Num 9, pp 1356-1358, issn 0146-9592, 3 p.Article

High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 filmMIN ZHANG; XUEHUI GU; LV, Kaibo et al.Applied surface science. 2013, Vol 268, pp 312-316, issn 0169-4332, 5 p.Article

C-shaped nanoaperture-enhanced germanium photodetectorLIANG TANG; MILLER, David A. B; OKYAY, Ali K et al.Optics letters. 2006, Vol 31, Num 10, pp 1519-1521, issn 0146-9592, 3 p.Article

The linearity and sensitivity of lateral effect position sensitie devices ― an improved geometryWANJUN WANG; BUSCH-VISHNIAC, I. J.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2475-2480, issn 0018-9383, 6 p., part 1Article

Absolute calibration of photodetectors: photocurrent multiplication versus photocurrent subtractionAGAFONOV, I. N; CHEKHOV, M. V; ISKHAKOV, T. S et al.Optics letters. 2011, Vol 36, Num 8, pp 1329-1331, issn 0146-9592, 3 p.Article

Semiconductor photodetectors III (25 January 2006, San Jose, California, USA)Cohen, Marshall J; Dereniak, Eustace L.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6161-X, 1Vol, pagination multiple, isbn 0-8194-6161-XConference Proceedings

Extended dynamical range solid state photon counterPROCHAZKA, I; HAMAL, K; BLAZEJ, J et al.SPIE proceedings series. 1998, pp 336-340, isbn 0-8194-2726-8Conference Paper

Bootstrap transimpedance amplifier: a new configurationGREEN, R. J; MCNEILL, M. G.IEE proceedings. Part G. Electronic circuits and systems. 1989, Vol 136, Num 2, pp 57-61, issn 0143-7089, 5 p.Article

Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode patternKOSCIELNIAK, W. C; PELOUARD, J. L; LITTLEJOHN, M. A et al.Applied physics letters. 1989, Vol 54, Num 6, pp 567-569, issn 0003-6951, 3 p.Article

High-performance Al0.15Ga0.85As/In0.53Ga0.47As MSM photodetectors grown by OMCVDWON-PYO HONG; GEE-KUNG CHANG; RAJARAM BHAT et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 659-662, issn 0018-9383, 4 p.Article

Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 μmLAVCHIEV, Ventsislav; HOLLY, Roman; GANG CHEN et al.Optics letters. 2009, Vol 34, Num 24, pp 3785-3787, issn 0146-9592, 3 p.Article

Study of grating performance for quantum well photodetectorsJIAN WANG; XIAOSHUANG CHEN; ZHIFENG LI et al.Journal of the Optical Society of America. B, Optical physics (Print). 2010, Vol 27, Num 11, pp 2428-2432, issn 0740-3224, 5 p.Article

Four quadrant photo-detector with ultra high common mode rejection ratio and ultra narrow gapPISANI, Marco.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 51-52Conference Paper

Information content of integral-adaptive self-scanning mode of multiscan photodetectorPODLASKIN, B. G; CHEKULAEV, E. A; ALFERIEFF, M. E et al.Technical physics. 1993, Vol 38, Num 11, pp 981-984, issn 1063-7842Article

Intégration monolithique de photodétecteurs et de guides optiques sur matériaux III-V = Monolithic integration of photodetectors and optical waveguides on III-V materialsVinchant, Jean-François; Decoster, Didier.1990, 275 p.Thesis

Semiconductor photodetectors II (San Jose CA, 25-26 January 2005)Cohen, Marshall J; Dereniak, Eustace L.SPIE proceedings series. 2005, isbn 0-8194-5700-0, IX, 170 p, isbn 0-8194-5700-0Conference Proceedings

Research on multiple-integrated-optic-chip of re-entrant fiber optic gyroXIANHUI MAO; QIAN TIAN; ENYAO ZHANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 636-644, issn 0277-786X, isbn 0-8194-5811-2, 1Vol, 9 p.Conference Paper

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