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Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectorsSHI, Jin-Wei; LIU, Yin-Hsin; LIU, Chee-Wee et al.Journal of lightwave technology. 2004, Vol 22, Num 6, pp 1583-1590, issn 0733-8724, 8 p.Article

Laser-based light barrier having a rectangular detection areaMUSA, Eldar; DEMIRER, Mutlu.Optics and lasers in engineering. 2010, Vol 48, Num 4, pp 435-440, issn 0143-8166, 6 p.Article

High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 filmMIN ZHANG; XUEHUI GU; LV, Kaibo et al.Applied surface science. 2013, Vol 268, pp 312-316, issn 0169-4332, 5 p.Article

Analysis and circuit modeling of waveguide-separated absorption charge multiplication-avalanche photodetector (WG-SACM-APD)EL-BATAWY, Yasser M; JAMAL DEEN, M.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 3, pp 335-344, issn 0018-9383, 10 p.Article

Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?VALLONE, Marco; GOANO, Michele; BERTAZZI, Francesco et al.Journal of electronic materials. 2014, Vol 43, Num 8, pp 3070-3076, issn 0361-5235, 7 p.Conference Paper

Cavity-enhanced multispectral photodetector using phase-tuned propagation: theory and designJIANFEI WANG; JUEJUN HU; XIAOCHEN SUN et al.Optics letters. 2010, Vol 35, Num 5, pp 742-744, issn 0146-9592, 3 p.Article

THz-photomixers - : An overviewSTÖHR, Andreas; JÄGER, Dieter.Proceedings of SPIE, the International SOciety for Optical Engineering. 2006, pp 61409D.1-61940D.8, issn 0277-786X, isbn 0-8194-6250-0, 1VolConference Paper

Comment on : performance limintations of GaAs/AIGaAs infrared superlattices . ReplyLEVINE, B. F; KINCH, M. A; YARIV, A et al.Applied physics letters. 1990, Vol 56, Num 23, pp 2354-2356, issn 0003-6951Article

Effects of the parasitics on the time response of RCE-PDsEL-BATAWY, Yasser M; DEEN, M. Jamal.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 3, pp 325-334, issn 0018-9383, 10 p.Article

Ultra-high sensitivity photodetector arrays with integrated amplification and passivation nano-layersJIE YAO; MOKINA, Irina A; HUNT, Jeffrey H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7598, issn 0277-786X, isbn 0-8194-7994-2 978-0-8194-7994-5, 1Vol, 759812.1-759812.8Conference Paper

Photoelectric response of polarization sensitive bacteriorhodopsin filmsQUN LI; STUART, Jeffrey A; BIRGE, Robert R et al.Biosensors & bioelectronics. 2004, Vol 19, Num 8, pp 869-874, issn 0956-5663, 6 p.Article

Photodetectors with an HIT structure on p-type crystalline Si wafersLIN, C.-H; TSAI, T.-H; WANG, C.-M et al.Applied surface science. 2013, Vol 275, pp 269-272, issn 0169-4332, 4 p.Conference Paper

Spatially encoded multibeam laser Doppler vibrometry using a single photodetectorFU, Y; GUO, M; PHUA, P. B et al.Optics letters. 2010, Vol 35, Num 9, pp 1356-1358, issn 0146-9592, 3 p.Article

High response organic deep ultraviolet photodetector with PEDOT:PSS anodeLU ZHU; QIAN DAI; HU, Zuo-Fu et al.Optics letters. 2011, Vol 36, Num 10, pp 1821-1823, issn 0146-9592, 3 p.Article

Backward-wave cancellation in distributed traveling-wave photodetectorsMURTHY, Sanjeev; KIM, Seong-Jin; JUNG, Thomas et al.Journal of lightwave technology. 2003, Vol 21, Num 12, pp 3071-3077, issn 0733-8724, 7 p.Article

C-shaped nanoaperture-enhanced germanium photodetectorLIANG TANG; MILLER, David A. B; OKYAY, Ali K et al.Optics letters. 2006, Vol 31, Num 10, pp 1519-1521, issn 0146-9592, 3 p.Article

The linearity and sensitivity of lateral effect position sensitie devices ― an improved geometryWANJUN WANG; BUSCH-VISHNIAC, I. J.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2475-2480, issn 0018-9383, 6 p., part 1Article

Modeling and simulation of HgCdTe based p+-n-n+ LWIR photodetectorSAXENA, P. K.Infrared physics & technology. 2011, Vol 54, Num 1, pp 25-33, issn 1350-4495, 9 p.Article

Semiconductor photodetectors III (25 January 2006, San Jose, California, USA)Cohen, Marshall J; Dereniak, Eustace L.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6161-X, 1Vol, pagination multiple, isbn 0-8194-6161-XConference Proceedings

Extended dynamical range solid state photon counterPROCHAZKA, I; HAMAL, K; BLAZEJ, J et al.SPIE proceedings series. 1998, pp 336-340, isbn 0-8194-2726-8Conference Paper

Bootstrap transimpedance amplifier: a new configurationGREEN, R. J; MCNEILL, M. G.IEE proceedings. Part G. Electronic circuits and systems. 1989, Vol 136, Num 2, pp 57-61, issn 0143-7089, 5 p.Article

Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode patternKOSCIELNIAK, W. C; PELOUARD, J. L; LITTLEJOHN, M. A et al.Applied physics letters. 1989, Vol 54, Num 6, pp 567-569, issn 0003-6951, 3 p.Article

High-performance Al0.15Ga0.85As/In0.53Ga0.47As MSM photodetectors grown by OMCVDWON-PYO HONG; GEE-KUNG CHANG; RAJARAM BHAT et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 659-662, issn 0018-9383, 4 p.Article

Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectorsJIANG, Da-Yong; ZHANG, Xi-Yan; LIU, Quan-Sheng et al.Applied surface science. 2010, Vol 256, Num 21, pp 6153-6156, issn 0169-4332, 4 p.Article

A model for the performance analysis and design of waveguide p-i-n photodetectorsNIKHIL RANJAN DAS; JAMAL DEEN, M.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 465-472, issn 0018-9383, 8 p.Article

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