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Photoconductive properties of cadmium selenide encapsulated in polymersHAGA, Y; WATANABE, T; YOSOMIYA, R et al.Zairyo. 1991, Vol 40, Num 455, pp 1105-1110, issn 0514-5163Article

Intensity and temperature dependence of steady-state photoconductivity down to 8 K and DOS distribution obtained from these measurements in a-Si:H = Intensitaet und Temperaturabhaengigkeit der stationaeren Photoleitfaehigkeit bis 8 K und die Zustandsdichteverteilung, die aus diesen Messungen in amorphem Si-H erhalten wirdMISRA, D.S; KUMAR, A; AGARWAL, S.C et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 1, pp 297-303, issn 0031-8965Article

Logarithmic conductance and electron-phonon interaction in ultrathin niobium films = Conductance logarithmique et interaction électron-phonon dans les couches ultraminces de niobiumDESAILLY, J; PANNETIER, B; MANEVAL, J. P et al.Physics letters. A. 1983, Vol 99, Num 2-3, pp 125-127, issn 0375-9601Article

Recombination at dislocations in silicon = Recombinaison sur des dislocations dans le silicium = Rekombination an Versetzungen in SiliziumMERGEL, D.Physica status solidi. A. Applied research. 1983, Vol 75, Num 1, pp 255-262, issn 0031-8965Article

Far-infrared photoconductivity spectroscopy of shallow acceptors in InSb = Photoleitfaehigkeits-Spektroskopie im fernen Infraroten der flachen Akzeptoren in InSbMEISELS, R; KUCHAR, F.Physica status solidi. B. Basic research. 1983, Vol 116, Num 2, pp 557-560, issn 0370-1972Article

Photoconductivity in halogenated and hydrogenated amorphous silicon films = Photoleitfaehigkeit in halogenierten und hydrierten amorphen Silizium-DuennschichtenMICOCCI, G; RIZZO, A; TEPORE, A et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp 609-614, issn 0031-8965Article

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Enhanced photoelectrocatalytic activity of Cr-doped TiO₂ nanotubes modified with polyanilineKUN YANG; WENHONG PU; YUANBIN TAN et al.Materials science in semiconductor processing. 2014, Vol 27, pp 777-784, issn 1369-8001, 8 p.Article

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A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC EpilayersVAN BRUNT, Edward; AGARWAL, Anant; AL BURK et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 809-813, issn 0361-5235, 5 p.Conference Paper

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