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Results 1 to 25 of 371

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Band bending at the Si(100)-Si3N4 interface studied by photoreflectance spectroscopyDEV, Kapil; SEEBAUER, E. G.Surface science. 2005, Vol 583, Num 1, pp 80-87, issn 0039-6028, 8 p.Article

Tuning of the high-brightness tapered laser and its applicationsBOHDAN, R; BERCHA, A; MARIANI, O et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 1, pp 213-218, issn 0370-1972, 6 p.Conference Paper

Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxySUZUKI, Hidetoshi; SUZUKI, Akio; FUKUYAMA, Atsuhiko et al.Journal of crystal growth. 2013, Vol 384, pp 5-8, issn 0022-0248, 4 p.Article

International Workshop on Modulation Spectroscopy of Semiconductor Structures (MS3)MISIWICZ, Jan; SITAREK, Piotr.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 319-465, issn 1862-6300, 146 p.Conference Paper

Numerical approximation of thermal conductivity depth distributions by the modulated photoreflectance dataZHU JIANXIN.SPIE proceedings series. 2001, pp 64-68, isbn 0-8194-4341-7Conference Paper

Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe2OZAKI, Shunji; ADACHI, Sadao.Journal of materials science. Materials in electronics. 2007, Vol 18, issn 0957-4522, S25-S28, SUP1Conference Paper

Isotopic dependence of the E'0 and E1 direct gaps in the electronic band structure of SiTSOI, S; RODRIGUEZ, S; RAMDAS, A. K et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153203.1-153203.4, issn 1098-0121Article

Microscale thermal characterization at temperatures up to 1000°C by photoreflectance microscopy. Application to the characterization of carbon fibres : Microscale heat transfert 2ROCHAIS, D; LE HOUËDEC, H; ENGUEHARD, F et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 10, pp 1498-1503, issn 0022-3727, 6 p.Conference Paper

Fermi level pinning of GaAs at room temperature directly determined by the amplitude of photoreflectance spectraYAU HUEI CHEN; RUY MING CHEN.SPIE proceedings series. 2000, pp 422-428, isbn 0-8194-3717-4Conference Paper

Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputteringPORNTHEERAPHAT, S; NUKEAW, J.Applied surface science. 2008, Vol 254, Num 23, pp 7851-7854, issn 0169-4332, 4 p.Conference Paper

Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μmRUDNO-RUDZINSKI, W; RYCZKO, K; SEK, G et al.Solid state communications. 2005, Vol 135, Num 4, pp 232-236, issn 0038-1098, 5 p.Article

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; PUUSTINEN, J et al.Journal of luminescence. 2013, Vol 136, pp 347-350, issn 0022-2313, 4 p.Article

Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure : A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wellsKUDRAWIEC, R; MISIEWICZ, J.Applied surface science. 2006, Vol 253, Num 1, pp 80-84, issn 0169-4332, 5 p.Conference Paper

Photoreflectance spectroscopy study of vertical cavity surface emitting laser structuresMURTAGH, M. E; GUENEBAUT, V; BLAND, S. W et al.Thin solid films. 2004, Vol 450, Num 1, pp 148-150, issn 0040-6090, 3 p.Conference Paper

Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gasMOTYKA, M; KUDRAWIEC, R; SYPEREK, M et al.Thin solid films. 2007, Vol 515, Num 11, pp 4662-4665, issn 0040-6090, 4 p.Article

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopyMISIEWICZ, J; KUDRAWIEC, R; SYPEREK, M et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 442-445, issn 0959-8324, 4 p.Conference Paper

Surface photovoltage and modulation spectroscopy of E_ and E+ transitions in GaNAs layersKUDRAWIEC, R; SITAREK, P; YU, K.-M et al.Thin solid films. 2014, Vol 567, pp 101-104, issn 0040-6090, 4 p.Article

Anisotropic optical characteristics of Au-doped rhenium diselenide single crystalsDUMCENCO, D. O; HUANG, W. Y; HUANG, Y. S et al.Journal of alloys and compounds. 2009, Vol 480, Num 1, pp 104-106, issn 0925-8388, 3 p.Conference Paper

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectanceLEE, Jia-Ren; LU, Chien-Rong; LEE, Wei-I et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 562-568, issn 1386-9477, 7 p.Article

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wellsMISIEWICZ, J; KUDRAWIEC, R; MOTYKA, M et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 446-449, issn 0959-8324, 4 p.Conference Paper

Photoreflectance study of AgGaTe2 single crystalsRAADIK, T; KRUSTOK, J; YAKUSHEV, M. V et al.Physica. B, Condensed matter. 2011, Vol 406, Num 3, pp 418-420, issn 0921-4526, 3 p.Article

Thermal diffusivity estimation in a picosecond photoreflectance experimentBATTAGLIA, Jean-Luc; KUSIAK, Andrzej; BATSALE, Jean-Christophe et al.Journal of heat transfer. 2007, Vol 129, Num 6, pp 756-758, issn 0022-1481, 3 p.Article

Transient photoreflectance in Al0.18Ga0.82N/GaN thin filmNIEHUS, M; SCHWARZ, R.Diamond and related materials. 2007, Vol 16, Num 4-7, pp 1425-1428, issn 0925-9635, 4 p.Conference Paper

A study on photoreflectance characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structuresYU, J. I; LEE, S. J; BAE, I. H et al.Physica. E, low-dimentional systems and nanostructures. 2004, Vol 25, Num 1, pp 131-134, issn 1386-9477, 4 p.Article

Optical properties of carbon materials formed by pyrolysis of novolac-resin/biomass compositesTHEODOROPOULOU, S; PAPADIMITRIOU, D; ZOUMPOULAKIS, L et al.Diamond and related materials. 2004, Vol 13, Num 2, pp 371-375, issn 0925-9635, 5 p.Conference Paper

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