Cinétique de croissance d'une tension photovoltaïque de redressement dans une structure de barrièreBYKOVNIKOV, A. A; IVANOVA, O. V; KONSTANTINOV, O. V et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 7, pp 1256-1262, issn 0015-3222Article

Carrier multiplication applicability for photovoltaics; a critical analysisALHARBI, Fahhad H.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 12, issn 0022-3727, 125102.1-125102.5Article

Improved metal-semiconductor position detector with oscillating lateral photovoltaic effectCHONG QI YU; HUI WANG.Optics letters. 2009, Vol 34, Num 24, pp 3770-3772, issn 0146-9592, 3 p.Article

Numerical study of the decay of photovoltage at metal-semiconductor interfacesCHEN, T. P; AU, H. L; LEE, T. C et al.Solid state communications. 1993, Vol 87, Num 12, pp 1163-1167, issn 0038-1098Article

On the possibility of anomalous bulk photovoltaic effect and of induced absorption in the nominal transparency region of a noncentrosymmetric crystal in a magnetic fieldKRISTOFFEL, N.Physica status solidi. B. Basic research. 1985, Vol 127, Num 1, pp 413-418, issn 0370-1972Article

An improved apparatus for surface photovoltage studies with a bimorphous piezoelectric Kelvin probeGERMANOVA, K; HARDALOV, C; STRASHILOV, V et al.Journal of physics. E. Scientific instruments. 1987, Vol 20, Num 3, pp 273-276, issn 0022-3735Article

Etude d'hétérojonctions dans des conditions hors d'équilibre par la méthode de la tension photovoltaïque à saturationERMAKOV, M. G; POLYAKOV, V. I; PETROV, V. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 568-570, issn 0015-3222Article

Reassessing the use of one-electron energetics in the design and characterization of organic photovoltaicsSAVOIE, Brett M; JACKSON, Nicholas E; MARKS, Tobin J et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 13, pp 4538-4547, issn 1463-9076, 10 p.Article

The Material Research Society Symposium on the Spectroscopy of HeterojunctionsJournal of physics. D, Applied physics (Print). 1997, Vol 30, Num 10, pp 1411-1445, issn 0022-3727Conference Proceedings

PROPRIETES PHOTOVOLTAIQUES D'UNE STRUCTURE PERIODIQUE P-N-P ASYMETRIQUEGULYJ EG; ZHAD'KO IP; ROMANOV VA et al.1982; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 2; PP. 331-336; BIBL. 6 REF.Article

THEORIE DE L'EFFET PHOTOGALVANIQUE DANS LES STRUCTURES A BARRIERE SUPERFICIELLE AVEC CONTACTS DE SCHOTTKYGIL'MAN BI; TRET'YAKOV AP.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1320-1324; BIBL. 19 REF.Article

EFFET PHOTOGALVANIQUE DANS LES CRISTAUX SANS CENTRE D'INVERSIONBASKIN EH M; MAGARILL LI; EHNTIN MV et al.1978; FIZ. TVERD. TELA; SUN; DA. 1978; VOL. 20; NO 8; PP. 2432-2436; BIBL. 8 REF.Article

TENSION PHOTOVOLTAIQUE DE LAMELLES MICROMACLEES DANS DES MONOCRISTAUX DE CARBURE DE SILICIUM DE LA MODIFICATION CUBIQUEAJVAZOVA LS.1978; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1978; VOL. 23; NO 5; PP. 744-747; ABS. ANGL.; BIBL. 7 REF.Article

Simulation of photogenerated current of PN silicon photodetector enhanced by impurity photovoltaic effectMOHAMMED, Wagah F; HUMOODY, Mudhar A; AL-TIKRITI, Munther N et al.Renewable & sustainable energy review. 2013, Vol 26, pp 408-413, issn 1364-0321, 6 p.Article

From electronic grade to solar grade silicon : chances and challenges in photovoltaicsPIZZINI, S; ACCIARRI, M; BINETTI, S et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 15, pp 2928-2942, issn 0031-8965, 15 p.Article

Current-voltage and light-voltage relations for the linear-graded pn junctionVAN OPDORP, C; HOOFT, G. W.Solid-state electronics. 1984, Vol 27, Num 3, pp 261-266, issn 0038-1101Article

Photovoltaic effects from porous SiÜNAL, B; BAYLISS, S. C.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 19, pp 2763-2769, issn 0022-3727Article

Errors and error-avoidance in the Schottky coupled surface photovoltage techniqueHOWLAND, W. H; FONASH, S. J.Journal of the Electrochemical Society. 1995, Vol 142, Num 12, pp 4262-4268, issn 0013-4651Article

Lateral photovoltage as a probe of MODFET channel disorderANAGNOSTAKIS, E. A.Physica status solidi. B. Basic research. 1992, Vol 172, Num 2, pp K61-K63, issn 0370-1972Article

Effet photoélectrique dans les supraconducteursZAJTSEV, A. V.ZETF. Pis′ma v redakciû. 1986, Vol 90, Num 3, pp 993-1009, issn 0044-4510Article

Photoactivité de contacts alliés étain-germanium dans la région infrarouge du spectreMARMUR, I. YA; OKSMAN, YA. A.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 888-892, issn 0015-3222Article

Photovoltaic effect in sensitized crystal violet dyesSHARMA, G. D; TRIPATHI, A. K; MATHUR, S. C et al.Journal of materials science letters. 1983, Vol 2, Num 8, pp 433-436, issn 0261-8028Article

Photovoltage spectra of silicon/porous silicon heterojunctionFENG YAN; XI-MAO BAO; TING GAO et al.Solid state communications. 1994, Vol 91, Num 5, pp 341-343, issn 0038-1098Article

Photocourants balistiques de trousVAS'KO, F. T.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 1, pp 86-92, issn 0015-3222Article

Fabrication of diode arrays for photovoltaic characterization of silicon substratesSOPORI, B. L.Applied physics letters. 1988, Vol 52, Num 20, pp 1718-1720, issn 0003-6951Article