AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxyRAMAN, Ajay; HURNI, Christophe A; SPECK, James S et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 216-220, issn 1862-6300, 5 p.Article

Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscopeLOPEZ, Iñaki; NOGALES, Emilio; HIDALGO, Pedro et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 113-117, issn 1862-6300, 5 p.Article

Front-side illuminated dye-sensitized solar cells based on bundle shaped titania nanotube membranesSTERGIOPOULOS, T; LIKODIMOS, V; HAHN, R et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 193-198, issn 1862-6300, 6 p.Article

Investigation of _a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related AlloysPANTZAS, K; PATRIARCHE, G; ORSAL, G et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 25-28, issn 1862-6300, 4 p.Article

Oxygen vacancy related relaxation and conduction behavior in (1 ― x)NBT-xBiCrO₃ solid solutionSELVAMANI, R; SINGH, G; TIWARI, V. S et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 118-125, issn 1862-6300, 8 p.Article

A Tersoff-based interatomic potential for wurtzite AINTUNGARE, Mihir; YUNFENG SHI; TRIPATHI, Neeraj et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1569-1572, issn 1862-6300, 4 p.Article

A green and fast way for reduction of graphene oxide in acidic aqueous solution via microwave assistanceTING LU; LIKUN PAN; CHUNYANG NIE et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 10, pp 2325-2327, issn 1862-6300, 3 p.Article

AC conductivity and dielectric spectroscopic studies of polypyrrole―titanium dioxide hybrid nanocompositesKUMAR, A; SARMAH, S.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2203-2210, issn 1862-6300, 8 p.Article

AIGaN/GaN FET for DNA hybridization detectionYUJI WANG; WU LU.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1623-1625, issn 1862-6300, 3 p.Article

Ammonothermal GaN substrates: Growth accomplishments and applicationsDWILINSKI, Robert; DORADZINSKI, Roman; GARCZYNSKI, Jerzy et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1489-1493, issn 1862-6300, 5 p.Article

Annealing effect on local nucleation fields in bistable microwires : Magnetic WiresIPATOV, M; ZHUKOVA, V; GONZALEZ, J et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 549-552, issn 1862-6300, 4 p.Article

Applications of colloidal crystal patterning for synthesis of 1D and 3D nanostructured semiconductors : Porous Semiconductors - Science and TechnologyLEVY-CLEMENT, Claude; XIAODONG WANG; BENOIT-MOEZ, Charlotte et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 6, pp 1426-1432, issn 1862-6300, 7 p.Article

Bipolar resistance switching in chalcogenide materialsPRADEL, Annie; FROLET, Nathalie; RAMONDA, Michel et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 10, pp 2303-2308, issn 1862-6300, 6 p.Article

Capturing triplet emission in white organic light emitting devicesSINGH, Jai.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1809-1812, issn 1862-6300, 4 p.Article

Characterization of Ag/TlInSe₂/Ag structureQASRAWI, A. F; GASANLY, N. M.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1688-1692, issn 1862-6300, 5 p.Article

Characterization of long-term stability of hydrophilized PEG-grafted PDMS within different media for biotechnological and pharmaceutical applications : Engineering of Functional InterfacesDEMMING, Stefanie; LESCHE, Claudia; SCHMOLKE, Hannah et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 6, pp 1301-1307, issn 1862-6300, 7 p.Article

Coherent growth of r-plane GaN films on ZnO substrates at room temperatureKOBAYASHI, Atsushi; UENO, Kohei; OHTA, Jitsuo et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 4, pp 834-837, issn 1862-6300, 4 p.Article

Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactionsDELALLEAU, Julien; PAKFAR, Ardechir; BAZIZI, El-Medhi et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 608-611, issn 1862-6300, 4 p.Article

Correlation of barrier material and applications quantum-well number for InGaN/(In)GaN blue light-emitting diodesCHANG, Jih-Yuan; KUO, Yen-Kuang; TSAI, Miao-Chan et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 729-734, issn 1862-6300, 6 p.Article

Correlation of crystallographic structure and magnetic properties of electrodeposited Co-rich Co-Pt filmsKHATRI, M. S; SCHLÖRB, H; FÄHLER, S et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 104-108, issn 1862-6300, 5 p.Article

Cu₂S nanowires and MnS/Cu₂S nanojunctions derived from γ-MnS nanowires via selective cation-exchange reactionXU, G; ZHU, Y. L; MA, X. L et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 123-128, issn 1862-6300, 6 p.Article

Determination of structural inhomogeneity of synthesized diamonds by backscattering electron diffraction : High-resolution X-ray Diffraction and ImagingFODCHUK, I; BALOVSYAK, S; BORCHA, M et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 11, pp 2591-2596, issn 1862-6300, 6 p.Article

Diamond ultra-microelectrode arrays for achieving maximum Faradaic current with minimum capacitive charging : Fundamentals and Applications of CVD DiamondNIANJUN YANG; SMIRNOV, Waldemar; HEES, Jakob et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2087-2092, issn 1862-6300, 6 p.Article

Effect of argon addition on the growth of thick single crystal diamond by high-power plasma CVD : Fundamentals and Applications of CVD DiamondTALLAIRE, Alexandre; ROND, Catherine; BENEDIC, Fabien et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2028-2032, issn 1862-6300, 5 p.Article

Effect of boron on formation of interstitial-related luminescence centres in ion implanted siliconMCCALLUM, J. C; VILLIS, B. J; JOHNSON, B. C et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 620-623, issn 1862-6300, 4 p.Article