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La planéité en microélectronique: Etude et modélisation de l'aplanissement des polymères = Planeity in microelectronics : a cinematical-based model for planarizing with polymer solutionsSchiltz, André; Herino, Roland.1992, 210 p.Thesis

Endpoint detection of Ge2Sb2Te5 during chemical mechanical planarizationAODONG HE; BO LIU; ZHITANG SONG et al.Applied surface science. 2013, Vol 283, pp 304-308, issn 0169-4332, 5 p.Article

Planarized InP/InGaAs heterojunction bipolar transistors with fmax > 500 GHzSAWDAI, D; CHANG, P. C; GAMBIN, V et al.DRC : Device research conference. 2004, pp a14-a15, isbn 0-7803-8284-6, 1VolConference Paper

Mixed upward planarization : Fast and robustSIEBENHALLER, Martin; KAUFMANN, Michael.Lecture notes in computer science. 2006, pp 522-523, issn 0302-9743, isbn 3-540-31425-3, 1Vol, 2 p.Conference Paper

Conformality of photoresist and antireflective coatings over topographyBRUCE, J. A; WALLANDER, E.SPIE proceedings series. 1998, pp 680-684, isbn 0-8194-2779-9Conference Paper

A novel planarization process for providing global planarity for IC manufacturingSHIH, Wu-Sheng; DAFFRON, Mark G.SPIE proceedings series. 2003, pp 813-818, isbn 0-8194-5189-4, 6 p.Conference Paper

Synergetic effect of organic cores and inorganic shells for core/shell structured composite abrasives for chemical mechanical planarizationYANG CHEN; ZHINA LI; NAIMING MIAO et al.Applied surface science. 2014, Vol 314, pp 180-187, issn 0169-4332, 8 p.Article

Chemical roles on Cu-slurry interface during copper chemical mechanical planarizationJING LI; YUHONG LIU; YAN PAN et al.Applied surface science. 2014, Vol 293, pp 287-292, issn 0169-4332, 6 p.Article

Raman modes in oligophenyls under hydrostatic pressureMARTIN, C. M; CAI, Q; GUHA, S et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 14, pp 3339-3344, issn 0370-1972, 6 p.Conference Paper

Polishing and local planarization of plastic spherical capsules using tumble finishingSURATWALA, T. I; STEELE, W. A; FEIT, M. D et al.Applied surface science. 2012, Vol 261, pp 679-689, issn 0169-4332, 11 p.Article

Planarization of clustered graphsDI BATTISTA, Giuseppe; DIDIMO, Walter; MARCANDALLI, A et al.Lecture notes in computer science. 2002, pp 60-74, issn 0302-9743, isbn 3-540-43309-0Conference Paper

Simultaneous mirror polishing of workpiece composed of various glassesWEIMIN LIN; KASAI, T; HORIO, K et al.Sensors and materials. 1999, Vol 11, Num 3, pp 181-195, issn 0914-4935Article

Benzotriazole as a passivating agent during chemical mechanical planarization of Ni-P alloy substratesYAN MU; MINGJIE ZHONG; RUSHING, Kenneth J et al.Applied surface science. 2014, Vol 315, pp 190-195, issn 0169-4332, 6 p.Article

Designs to improve polysilicon micromirror surface topologyBURNS, D. M; BRIGHT, V. M.SPIE proceedings series. 1997, pp 100-110, isbn 0-8194-2419-6Conference Paper

Development of novel process for Ru CMP using ceric ammonium nitrate (CAN)-containing nitric acidLEE, Woo-Jin; PARK, Hyung-Soon.Applied surface science. 2004, Vol 228, Num 1-4, pp 410-417, issn 0169-4332, 8 p.Article

Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarizationKIM, Hyoungjae; JEONG, Haedo.Journal of electronic materials. 2004, Vol 33, Num 1, pp 53-60, issn 0361-5235, 8 p.Article

Effects of tool stiffness and infeed scheme on planarisation (Integrated model for simulation of planarisation process) : Advances in manufacturing of semiconductor materialsLIBO ZHOU; SHIMIZU, Jun; EDA, Hiroshi et al.International journal of manufacturing technology and management. 2005, Vol 7, Num 5-6, pp 490-503, issn 1368-2148, 14 p.Article

Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modelingJING LI; YUHONG LIU; TONGQING WANG et al.Applied surface science. 2013, Vol 265, pp 764-770, issn 0169-4332, 7 p.Article

Planarization process of single crystalline silicon asperity under abrasive rolling effect studied by molecular dynamics simulationLINA SI; DAN GUO; JIANBIN LUO et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 109, Num 1, pp 119-126, issn 0947-8396, 8 p.Article

Tribological issues and modeling of removal rate of low-k films in CMPTHAGELLA, Swetha; SIKDER, Arun K; KUMAR, Ashok et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 3, pp G205-G215, issn 0013-4651Article

Optimization of CMP from the viewpoint of consumable effectsJIANFENG LUO; DORNFELD, David A.Journal of the Electrochemical Society. 2003, Vol 150, Num 12, pp G807-G815, issn 0013-4651Article

Effects of deionized water pressure and purified nitrogen gas on the chemical mechanical polishing processKIM, Sang-Yong; JEONG, So-Young; SEO, Yong-Jin et al.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 5, pp 299-302, issn 0957-4522Article

A novel technique for fabrication of multi-layered micro coils in microelectromechanical systems (MEMS) applicationsCHANG, Hung-Pin; JIANGYUAN QIAN; BACHMAN, Mark et al.SPIE proceedings series. 2002, pp 187-195, isbn 0-8194-4448-0Conference Paper

Submicron particle removal in post-oxide chemical-mechanical planarization (CMP) cleaningZHANG, F; BUSNAINA, A.Applied physics. A, Materials science & processing (Print). 1999, Vol 69, Num 4, pp 437-440, issn 0947-8396Article

Understanding hydrogen silsesquioxane-based dielectric film processingLOBODA, M. J; TOSKEY, G. A.Solid state technology. 1998, Vol 41, Num 5, pp 99-105, issn 0038-111X, 4 p.Article

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