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Planarized InP/InGaAs heterojunction bipolar transistors with fmax > 500 GHzSAWDAI, D; CHANG, P. C; GAMBIN, V et al.DRC : Device research conference. 2004, pp a14-a15, isbn 0-7803-8284-6, 1VolConference Paper

Mixed upward planarization : Fast and robustSIEBENHALLER, Martin; KAUFMANN, Michael.Lecture notes in computer science. 2006, pp 522-523, issn 0302-9743, isbn 3-540-31425-3, 1Vol, 2 p.Conference Paper

Conformality of photoresist and antireflective coatings over topographyBRUCE, J. A; WALLANDER, E.SPIE proceedings series. 1998, pp 680-684, isbn 0-8194-2779-9Conference Paper

A novel planarization process for providing global planarity for IC manufacturingSHIH, Wu-Sheng; DAFFRON, Mark G.SPIE proceedings series. 2003, pp 813-818, isbn 0-8194-5189-4, 6 p.Conference Paper

Planarization of clustered graphsDI BATTISTA, Giuseppe; DIDIMO, Walter; MARCANDALLI, A et al.Lecture notes in computer science. 2002, pp 60-74, issn 0302-9743, isbn 3-540-43309-0Conference Paper

Simultaneous mirror polishing of workpiece composed of various glassesWEIMIN LIN; KASAI, T; HORIO, K et al.Sensors and materials. 1999, Vol 11, Num 3, pp 181-195, issn 0914-4935Article

Designs to improve polysilicon micromirror surface topologyBURNS, D. M; BRIGHT, V. M.SPIE proceedings series. 1997, pp 100-110, isbn 0-8194-2419-6Conference Paper

Effects of deionized water pressure and purified nitrogen gas on the chemical mechanical polishing processKIM, Sang-Yong; JEONG, So-Young; SEO, Yong-Jin et al.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 5, pp 299-302, issn 0957-4522Article

A novel technique for fabrication of multi-layered micro coils in microelectromechanical systems (MEMS) applicationsCHANG, Hung-Pin; JIANGYUAN QIAN; BACHMAN, Mark et al.SPIE proceedings series. 2002, pp 187-195, isbn 0-8194-4448-0Conference Paper

Submicron particle removal in post-oxide chemical-mechanical planarization (CMP) cleaningZHANG, F; BUSNAINA, A.Applied physics. A, Materials science & processing (Print). 1999, Vol 69, Num 4, pp 437-440, issn 0947-8396Article

Understanding hydrogen silsesquioxane-based dielectric film processingLOBODA, M. J; TOSKEY, G. A.Solid state technology. 1998, Vol 41, Num 5, pp 99-105, issn 0038-111X, 4 p.Article

Friction Modeling in Linear Chemical-Mechanical PlanarizationJINGANG YI.IEEE control systems. 2008, Vol 28, Num 5, pp 59-78, issn 1066-033X, 20 p.Article

Bimodal Crossing MinimizationBUCHHEIM, Christoph; JÜNGER, Michael; MENZE, Annette et al.Lecture notes in computer science. 2006, pp 497-506, issn 0302-9743, isbn 3-540-36925-2, 1Vol, 10 p.Conference Paper

Method for measuring feature-scale planarization in copper chemical mechanical polishing processingLAURSEN, T; RUNNELS, S. R; BASAK, S et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 4, pp G279-G283, issn 0013-4651Article

Planarization of metallic parts for single and multi-level (S)LIGAKHANMALEK, C; WOOD, R; GENOVA, P et al.SPIE proceedings series. 1998, pp 86-92, isbn 0-8194-2772-1Conference Paper

Bottom-ARC optimization methodology for 0.25 μm lithography and beyondDE BEECK, M. O; VANDENBERGHE, G; VAN WINGERDEN, J et al.SPIE proceedings series. 1998, pp 322-336, isbn 0-8194-2779-9Conference Paper

Characterization and modeling of oxide chemical-mechanical polishing using planarization length and pattern density conceptsOUMA, D. Okumu; BONING, Duane S; CHUNG, James E et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 232-244, issn 0894-6507Article

Etching of buried photoresist layers and its application to the formation of three-dimensional layered structuresWATANABE, T; SAMESHIMA, T; IDE, M et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 4, pp 429-432, issn 0947-8396Article

Development of aluminum chemical mechanical planarizationRONAY, Maria.Journal of the Electrochemical Society. 2001, Vol 148, Num 9, pp G494-G499, issn 0013-4651Article

Exploring CMP solutions to planarity challenges with tungsten plugsMENDONCA, J; MURELLA, K; KIM, I et al.Thin solid films. 1998, Vol 320, Num 1, pp 103-109, issn 0040-6090Conference Paper

Two-layer anti-reflection strategies for implant applicationsGUERRERO, Douglas J; SMITH, Tamara; KATO, Masakazu et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6196-2, 2Vol, Part 1, 61530O.1-61530O.8Conference Paper

An approach for mixed upward planarizationEIGLSPERGER, Markus; KAUFMANN, Michael.Lecture notes in computer science. 2001, pp 352-364, issn 0302-9743, isbn 3-540-42423-7Conference Paper

Present and future role of chemical mechanical polishing in wafer bondingGUI, C; ELWENSPOEK, M; GARDENIERS, J. G. E et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 6, pp 2198-2204, issn 0013-4651Article

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched inp based structuresZEGAOUI, M; HARARI, J; CHOUEIB, N et al.Electronics Letters. 2007, Vol 43, Num 22, pp 1234-1236, issn 0013-5194, 3 p.Article

A fixed-parameter approach to two-layer planarizationDUJMOVIC, V; FELLOWS, M; WHITESIDES, S et al.Lecture notes in computer science. 2002, pp 1-15, issn 0302-9743, isbn 3-540-43309-0Conference Paper

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