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Results 1 to 25 of 17408

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Endpoint detection of Ge2Sb2Te5 during chemical mechanical planarizationAODONG HE; BO LIU; ZHITANG SONG et al.Applied surface science. 2013, Vol 283, pp 304-308, issn 0169-4332, 5 p.Article

Synergetic effect of organic cores and inorganic shells for core/shell structured composite abrasives for chemical mechanical planarizationYANG CHEN; ZHINA LI; NAIMING MIAO et al.Applied surface science. 2014, Vol 314, pp 180-187, issn 0169-4332, 8 p.Article

Polishing and local planarization of plastic spherical capsules using tumble finishingSURATWALA, T. I; STEELE, W. A; FEIT, M. D et al.Applied surface science. 2012, Vol 261, pp 679-689, issn 0169-4332, 11 p.Article

Benzotriazole as a passivating agent during chemical mechanical planarization of Ni-P alloy substratesYAN MU; MINGJIE ZHONG; RUSHING, Kenneth J et al.Applied surface science. 2014, Vol 315, pp 190-195, issn 0169-4332, 6 p.Article

Planarization of josephson junctions for large-scale integrated Nb SFQ circuits by mechanical polishingSATOH, Tetsuro; HINODE, K; AKAIKE, H et al.Physica. C. Superconductivity. 2004, Vol 412-14, pp 1447-1450, issn 0921-4534, 4 p., 2Conference Paper

Analysis the microscopic solid-based wear process in the chemical mechanical planarizationXUESONG HAN; GAN, Yong X.Surface and interface analysis. 2012, Vol 44, Num 5, pp 590-600, issn 0142-2421, 11 p.Article

Effect of iron(III) nitrate concentration on tungsten chemical-mechanical-planarization performanceLIM, Jae-Hyung; PARK, Jin-Hyung; PARK, Jea-Gun et al.Applied surface science. 2013, Vol 282, pp 512-517, issn 0169-4332, 6 p.Article

Planarization machining of sapphire wafers with boron carbide and colloidal silica as abrasivesXIAOKAI HU; ZHITANG SONG; ZHONGCAI PAN et al.Applied surface science. 2009, Vol 255, Num 19, pp 8230-8234, issn 0169-4332, 5 p.Article

Planarized InP/InGaAs heterojunction bipolar transistors with fmax > 500 GHzSAWDAI, D; CHANG, P. C; GAMBIN, V et al.DRC : Device research conference. 2004, pp a14-a15, isbn 0-7803-8284-6, 1VolConference Paper

A feature scale model for chemical mechanical planarization of damascene structuresSAXENA, Ravi; THAKURTA, Dipto G; GUTMANN, Ronald J et al.Thin solid films. 2004, Vol 449, Num 1-2, pp 192-206, issn 0040-6090, 15 p.Article

Chemical mechanical planarization operation via dynamic programmingLIN, Chia-Shui; LEE, Yung-Chou.Microelectronic engineering. 2007, Vol 84, Num 12, pp 2817-2831, issn 0167-9317, 15 p.Article

Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarizationKIM, Hyoungjae; JEONG, Haedo.Journal of electronic materials. 2004, Vol 33, Num 1, pp 53-60, issn 0361-5235, 8 p.Article

An overview of corrosion-wear interaction for planarizing metallic thin filmsZIOMEK-MOROZ, M; MILLER, A; HAWK, J et al.Wear. 2003, Vol 255, Num 2, pp 869-874, issn 0043-1648, 6 p.Conference Paper

Reliability evaluation of Nb 10 kA/cm2 fabrication process for large-scale SFQ circuitsNAGASAWA, S; HINODE, K; SATOH, T et al.Physica. C. Superconductivity. 2005, Vol 426-31, pp 1525-1532, issn 0921-4534, 8 p., 2Conference Paper

Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnectCHEN, K. W; WANG, Y. L; LIU, C. P et al.Thin solid films. 2004, Vol 447-48, pp 531-536, issn 0040-6090, 6 p.Conference Paper

Multivariate run-to-run Control of arm-to-arm variations in chemical mechanical planarizationCAMPBELL, W. J; RAEDER, C; WENNER, V et al.SPIE proceedings series. 1998, pp 61-68, isbn 0-8194-2966-XConference Paper

Mixed upward planarization : Fast and robustSIEBENHALLER, Martin; KAUFMANN, Michael.Lecture notes in computer science. 2006, pp 522-523, issn 0302-9743, isbn 3-540-31425-3, 1Vol, 2 p.Conference Paper

A novel planarization process for providing global planarity for IC manufacturingSHIH, Wu-Sheng; DAFFRON, Mark G.SPIE proceedings series. 2003, pp 813-818, isbn 0-8194-5189-4, 6 p.Conference Paper

Conformality of photoresist and antireflective coatings over topographyBRUCE, J. A; WALLANDER, E.SPIE proceedings series. 1998, pp 680-684, isbn 0-8194-2779-9Conference Paper

Chemical roles on Cu-slurry interface during copper chemical mechanical planarizationJING LI; YUHONG LIU; YAN PAN et al.Applied surface science. 2014, Vol 293, pp 287-292, issn 0169-4332, 6 p.Article

Raman modes in oligophenyls under hydrostatic pressureMARTIN, C. M; CAI, Q; GUHA, S et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 14, pp 3339-3344, issn 0370-1972, 6 p.Conference Paper

Integrating Ormosil films onto microstructured semiconductor substratesOMBABA, Matthew M; LOGEESWARAN, V. J; IONESCU, Adrian et al.Acta materialia. 2014, Vol 72, pp 159-166, issn 1359-6454, 8 p.Article

Designs to improve polysilicon micromirror surface topologyBURNS, D. M; BRIGHT, V. M.SPIE proceedings series. 1997, pp 100-110, isbn 0-8194-2419-6Conference Paper

Planarization of clustered graphsDI BATTISTA, Giuseppe; DIDIMO, Walter; MARCANDALLI, A et al.Lecture notes in computer science. 2002, pp 60-74, issn 0302-9743, isbn 3-540-43309-0Conference Paper

Simultaneous mirror polishing of workpiece composed of various glassesWEIMIN LIN; KASAI, T; HORIO, K et al.Sensors and materials. 1999, Vol 11, Num 3, pp 181-195, issn 0914-4935Article

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