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Collective excitations in intercalated compoundsKOBAYASHI, M; TAKAHASHI, T.Journal of the Physical Society of Japan. 1985, Vol 54, Num 1, pp 25-28, issn 0031-9015Article

Pattern formation as a signature of quantum degeneracy in a cold exciton systemLEVITOV, L. S; SIMONS, B. D; BUTOV, L. V et al.Physical review letters. 2005, Vol 94, Num 17, pp 176404.1-176404.4, issn 0031-9007Article

Impact-ionized electron-hole plasma instability in GaAsMICKEVICIUS, R; REKLAITIS, A.International journal of infrared and millimeter waves. 1985, Vol 6, Num 3, pp 235-248, issn 0195-9271Article

Rôle des microinclusions absorbantes dans le mécanisme de rupture par laser de diélectriques à bande largeBABADZHAN, E. I; KOSACHEV, V. V; LOKHOV, YU. N et al.Fizika i himiâ obrabotki materialov. 1985, Num 1, pp 20-25, issn 0015-3214Article

Natural damping of nonlocal surface Bernstein modes in the high-magnetic-field quantum limitGUMBS, G.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 4009-4011, issn 0163-1829Article

Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article

Photoluminescence study of confined electron hole plasma in GaxIn1-xAs heterostructuresGAL, M; VINER, J. M; TAYLOR, P. C et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 948-953, issn 0021-8979Article

Echauffement du plasma d'électrons-trous dans des hétérostructures doublesLUBASHEVSKIJ, I. A; RYZHIJ, V. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2031-2034, issn 0015-3222Article

Integro-differential equations for the volution in the athermal pre-electron-hole plasma state of an irradiated direct semiconductorHEINER, E.Physica status solidi. B. Basic research. 1987, Vol 144, Num 2, pp 653-660, issn 0370-1972Article

Exciton-plasma transition in GaAsCOLLET, J.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 4, pp 417-422, issn 0022-3697Article

Current injected electron-hole plasma in GaP pin-device structuresBOGATZ, A; SCHWABE, R; JACOBS, K et al.Solid state communications. 1984, Vol 52, Num 4, pp 435-439, issn 0038-1098Article

Role of electron-hole pairs in the mechanisms of desorption from semiconductor surfacesWAUTELET, M.Surface science. 1983, Vol 133, Num 1, pp L437-L440, issn 0039-6028Article

Picosecond time-resolved Raman studies of the expansion of the electron-hole plasma in SiTSEN, K. T.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 4134-4136, issn 0163-1829Article

Collective modes of an electron-hole system in a magnetic field. IIINOTO, H.Journal of the Physical Society of Japan. 1985, Vol 54, Num 9, pp 3472-3477, issn 0031-9015Article

Expansion of the electron-hole liquid plasma at GaAs surfaceKORBUTYAK, D. V; LITOVCHENKO, V. G.Physica status solidi. B. Basic research. 1983, Vol 120, Num 1, pp 87-97, issn 0370-1972Article

Strong dephasing in a laser excited semiconductor due to carrier-plasmon scatteringMANZKE, G; MOLDZIO, U; HENNEBERGER, K et al.Physica status solidi. B. Basic research. 1997, Vol 202, Num 2, pp 961-976, issn 0370-1972Conference Paper

Stochastic self-oscillations in a two-temperature electron-hole plasma in a semiconductorBONCH-BRUEVICH, V. L; LE VU KY.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, pp 111-116, issn 0370-1972Article

INSTABILITE AMBIPOLAIRE D'UN PLASMA D'ELECTRONS-TROUS DANS LES SEMICONDUCTEURSKALENKOV SG; RYZHIJ VI.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1987-1990; BIBL. 14 REF.Article

RECOMBINAISON RADIATIVE D'UN PLASMA D'ELECTRONS-TROUS HORS D'EQUILIBRE DANS LES CRISTAUX DE CDSLYSENKO VG; REVENKO VI; TRATAS TG et al.1975; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 68; NO 1; PP. 335-346; ABS. ANGL.; BIBL. 19 REF.Article

THE THEORY OF THE TRANSIENT BEHAVIOR OF A PLASMA INJECTED INTO A TRAP-FREE SEMICONDUCTOR AT CONSTANT CURRENT.ZEE B; LAMPERT MA.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 4416-4421; BIBL. 8 REF.Article

PINCEMENT EN THETA D'UN PLASMA D'ELECTRONS-TROUS DANS LES SEMICONDUCTEURS EN FORME DE TUBESVLADIMIROV VV; GORSHKOV VN; GURIN AA et al.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 11; PP. 3222-3225; BIBL. 4 REF.Article

Optical electron-hole tweezers in semiconductorsBINDER, R; LINDBERG, M.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 2, pp 729-740, issn 0953-8984, 12 p.Article

Semiconductor microstructure in a squeezed vacuum : Electron-hole plasma luminescenceGINOSSAR, Eran; LEVIT, Shimon.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075333.1-075333.6, issn 1098-0121Article

On the hot and cold autosolitons in dissipative semiconductor structuresKAMILOV, I. K; STEPURENKO, A. A; KOVALEV, A. S et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 25, pp 3843-3850, issn 0953-8984, 8 p.Article

One-dimensional excitonic states and lasing in highly uniform quantum wires formed by cleaved-edge overgrowth with growth-interrupt annealingAKIYAMA, H; YOSHITA, M; PFEIFFER, L. N et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 35, pp S3549-S3566, issn 0953-8984Conference Paper

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