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Results 1 to 25 of 429

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Picosecond time-resolved Raman studies of the expansion of the electron-hole plasma in SiTSEN, K. T.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 4134-4136, issn 0163-1829Article

Pattern formation as a signature of quantum degeneracy in a cold exciton systemLEVITOV, L. S; SIMONS, B. D; BUTOV, L. V et al.Physical review letters. 2005, Vol 94, Num 17, pp 176404.1-176404.4, issn 0031-9007Article

Integro-differential equations for the volution in the athermal pre-electron-hole plasma state of an irradiated direct semiconductorHEINER, E.Physica status solidi. B. Basic research. 1987, Vol 144, Num 2, pp 653-660, issn 0370-1972Article

Strong dephasing in a laser excited semiconductor due to carrier-plasmon scatteringMANZKE, G; MOLDZIO, U; HENNEBERGER, K et al.Physica status solidi. B. Basic research. 1997, Vol 202, Num 2, pp 961-976, issn 0370-1972Conference Paper

Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article

Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wiresBENNETT, C. R; TANATAR, B; CONSTANTINOU, N. C et al.Solid state communications. 1996, Vol 99, Num 7, pp 509-512, issn 0038-1098Article

Expansion of the electron-hole plasma in Si: a picosecond time-resolved Raman probeTSEN, K. T; SANKEY, O. F.Physical review. B, Condensed matter. 1988, Vol 37, Num 8, pp 4321-4324, issn 0163-1829Article

Electron-hole plasma generation in gallium nitrideCINGOLANI, R; FERRARA, M; LUGARA, M et al.Solid state communications. 1986, Vol 60, Num 9, pp 705-708, issn 0038-1098Article

Many-body effects in the absorption, gain, and luminescence spectra of semiconductor quantum-well structuresSCHMITT-RINK, S; ELL, C; HAUG, H et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1183-1189, issn 0163-1829Article

Plasma électron-trou bidimensionnel sur la surface de séparation germanium-électrolyteASNIN, V. M; ROGACHEV, A. A; STEPANOV, V. I et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 43, Num 6, pp 284-287, issn 0370-274XArticle

Optical electron-hole tweezers in semiconductorsBINDER, R; LINDBERG, M.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 2, pp 729-740, issn 0953-8984, 12 p.Article

Semiconductor microstructure in a squeezed vacuum : Electron-hole plasma luminescenceGINOSSAR, Eran; LEVIT, Shimon.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075333.1-075333.6, issn 1098-0121Article

On the hot and cold autosolitons in dissipative semiconductor structuresKAMILOV, I. K; STEPURENKO, A. A; KOVALEV, A. S et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 25, pp 3843-3850, issn 0953-8984, 8 p.Article

One-dimensional excitonic states and lasing in highly uniform quantum wires formed by cleaved-edge overgrowth with growth-interrupt annealingAKIYAMA, H; YOSHITA, M; PFEIFFER, L. N et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 35, pp S3549-S3566, issn 0953-8984Conference Paper

Pattern formation under bistable electro-optical absorption in quantum wells : IIBONILLA, L. L; KOCHELAP, V. A; VELASCO, C. A et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 33, pp 6413-6426, issn 0953-8984Article

Processus non stationnaires d'accumulation et de dissipation du plasma d'électrons-trous dans les semiconducteurs dans des champs électriques intensesEFANOV, Y. M; KARDO-SYSOEV, A. F; SMIRNOVA, I. A et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 620-625, issn 0015-3222Article

The relation between light absorption and luminescence in laser cooling of two-dimensional semiconductor systemsKWONG, N. H; RUPPER, G; GU, B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64510I.1-64610I.6, issn 0277-786X, isbn 978-0-8194-6574-0, 1VolConference Paper

Electron-hole plasma and its pulsation luminescence in CuBrMASUMOTO, Y; IKEZAWA, M.Solid state communications. 1998, Vol 105, Num 3, pp 151-154, issn 0038-1098Article

Band-gap dynamics and nonlinear propagation of optical pulses in CdTeCOLLET, J. H; PUGNET, M; RÜHLE, W. W et al.Journal of applied physics. 1990, Vol 68, Num 4, pp 1815-1819, issn 0021-8979Article

Subpicosecond plasma dynamics and absorption saturation in GaAsCOLLET, J; OUDAR, J. L; AMAND, T et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 5443-5449, issn 0163-1829, part 1Article

Direct evidence of the self-compression of injected electron-hole plasma in siliconALTUKHOV, Pavel; KUZMINOV, Evgenii.Physica status solidi. B. Basic research. 2008, Vol 245, Num 6, pp 1181-1183, issn 0370-1972, 3 p.Article

Dimensionality dependence of Pauli blocking effects in semiconductor quantum wellsTHILAGAM, A.The Journal of physics and chemistry of solids. 1999, Vol 60, Num 4, pp 497-502, issn 0022-3697Article

Pattern formation under bistable electro-optical absorption in quantum wells : IBONILLA, L. L; KOCHELAP, V. A; VELASCO, C. A et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 33, pp 6395-6411, issn 0953-8984Article

High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructuresBUCKLE, P. D; DAWSON, P.Surface science. 1996, Vol 361-62, Num 1-3, pp 431-434, issn 0039-6028Conference Paper

The effects of carrier transport on the photoluminescence of degenerate electron-hole plasma in GaAs epilayersPOLES, E; GOLDBERG, S. Y; FAINBERG, B et al.Applied surface science. 1996, Vol 106, pp 457-465, issn 0169-4332Conference Paper

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