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Assessment of interface roughness during plasma etching through the use of real-time ellipsometryHAN, Chien-Yuan; LAI, Chien-Wen; CHAO, Yu-Faye et al.Applied surface science. 2011, Vol 257, Num 7, pp 2536-2539, issn 0169-4332, 4 p.Article

Modelling of plasma etching using a generalized regression neural networkKIM, Byungwhan; KIM, Sungmo; KIM, Kunho et al.Vacuum. 2003, Vol 71, Num 4, pp 497-503, issn 0042-207X, 7 p.Article

Effects of O2 annealing after etching SrBi2Ta2O9 thin film in Cl2/CF4/Ar plasmaKIM, Dong-Pyo; KIM, Chang-Il; YU, Byoung-Gon et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 904-911, issn 0167-9317, 8 p.Conference Paper

A mathematical model for a parallel plate plasma etching reactorECONOMOU, D. J; ALKIRE, R. C.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2786-2794, issn 0013-4651Article

The physics of plasma etchingULACIA, J. I; SCHWARZL, S.Physica scripta. T. 1991, Vol 35, pp 299-308, issn 0281-1847Conference Paper

Hochrateplasmaätzen von einkristallinem Quarz und Quarzglas = High rate plasma etching of monocrystalline quartz and quartz glassesSCHREITER, S.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1989, Vol 31, Num 3, pp 456-461, issn 0372-7610, 6 p.Article

Fluorocarbon plasmas for nanotexturing of polymers : A route to water-repellent antireflective surfacesDI MUNDO, Rosa; DE BENEDICTIS, Vincenzo; PALUMBO, Fabio et al.Applied surface science. 2009, Vol 255, Num 10, pp 5461-5465, issn 0169-4332, 5 p.Conference Paper

High-performance and damage-free neutral-beam etching processes using negative ions in pulse-time-modulated plasmaSAMUKAWA, Seiji.Applied surface science. 2007, Vol 253, Num 16, pp 6681-6689, issn 0169-4332, 9 p.Article

A Monte Carlo simulation model for surface evolution by plasma etchingFANGFANG CHEN; KAIGUI ZHU; AQING CHEN et al.Applied surface science. 2013, Vol 280, pp 655-659, issn 0169-4332, 5 p.Article

Effects of hydrogen etching process on the structural and optical properties of nano-crystalline diamond filmsLINJUN WANG; JIAN HUANG; QINGKAI ZENG et al.Applied surface science. 2012, Vol 258, Num 6, pp 2173-2175, issn 0169-4332, 3 p.Conference Paper

Micro-machine fabrication using diamond-like carbon filmsMOUSINHO, A. P; MANSANO, R. D; MASSI, M et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 1041-1044, issn 0925-9635, 4 p.Conference Paper

Study on silicon-slicing technique using plasma-etching processingYAMAGUCHI, Mitsutaka; ABE, Yoshinori; MASUDA, Atsushi et al.Solar energy materials and solar cells. 2009, Vol 93, Num 6-7, pp 789-791, issn 0927-0248, 3 p.Conference Paper

Investigation of particle reduction and its transport mechanism in UHF-ECR dielectric etching systemKOBAYASHI, Hiroyuki; YOKOGAWA, Kenetsu; MAEDA, Kenji et al.Thin solid films. 2008, Vol 516, Num 11, pp 3469-3473, issn 0040-6090, 5 p.Conference Paper

Plasma nitriding using high H2 content gas mixtures for a cavitation erosion resistant steelALLENSTEIN, A. N; LEPIENSKI, C. M; BUSCHINELLI, A. J. A et al.Applied surface science. 2013, Vol 277, pp 15-24, issn 0169-4332, 10 p.Article

Prediction of profile surface roughness in CHF3/CF4 plasma using neural networkKIM, Byungwhan; KIM, Kunho.Applied surface science. 2004, Vol 222, Num 1-4, pp 17-22, issn 0169-4332, 6 p.Article

Plasma etch process characterization : an application of atomic force microscopyWENGE YANG; BHANWAR SINGH.SPIE proceedings series. 1998, pp 30-40, isbn 0-8194-2777-2Conference Paper

Dry processHORIIKE, Yasuhiro; HORI, Masaru; MAEDA, Masahiko et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, issn 0021-4922, 136 p., 1Conference Proceedings

Effects of plasma power and reaction gases on the surface properties of ePTFE materials during a plasma modification processCHIEN, Hsi-Hsin; MA, Kung-Jeng; KUO, Chien-Huang et al.Surface & coatings technology. 2013, Vol 228, issn 0257-8972, S477-S481, SUP1Conference Paper

Improvement of SiO2 pattern profiles etched in CF4and SF6 plasmas by using a Faraday cage and neutral beamsMIN, Jae-Ho; LEE, Gyeo-Re; LEE, Jin-Kwan et al.Surface & coatings technology. 2005, Vol 193, Num 1-3, pp 75-80, issn 0257-8972, 6 p.Conference Paper

In situ ellipsometry during plasma etching of SiO2 films on SiHAVERLAG, M; KROESEN, G. M. W; DE ZEEUW, C. J. H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 529-533, issn 0734-211X, 5 p.Article

In situ laser diagnostic studies of plasma-generated particulate contaminationSELWYN, G. S; SINGH, J; BENNETT, R. S et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2758-2765, issn 0734-2101, 8 p.Article

Superhigh-rate plasma jet etching of siliconBARDOS, L; BERG, S; BLOM, H-O et al.Applied physics letters. 1989, Vol 55, Num 16, pp 1615-1617, issn 0003-6951, 3 p.Article

Emission spectroscopic investigation of the decomposition of CCl4 in plasma etching processesTILLER, H.-J; BREITBARTH, F.-W; PFAUCH, G et al.Beiträge aus der Plasmaphysik. 1983, Vol 23, Num 5, pp 519-528, issn 0005-8025Article

Profile control of polysilicon lines with an SF6/O2 plasma etch processLIGHT, R. W; BELL, H. B.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1567-1571, issn 0013-4651Article

Controlled film formation during CCl4 plasma etchingBERNACKI, S. E; KOSICKI, B. B.Journal of the Electrochemical Society. 1984, Vol 131, Num 8, pp 1926-1931, issn 0013-4651Article

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