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Accumulation de défauts ponctuels en régime d'excitation dans une réaction A+B=0 (modèle linéaire continu)ANTONOV-ROMANOVSKIJ, V. V.Fizika tverdogo tela. 1985, Vol 27, Num 4, pp 1116-1120, issn 0367-3294Article

Many-particle effects in accumulation kinetics of Frenkel defects in crystalsKUZOVKOV, V. N; KOTOMIN, E. A.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 13, pp 2283-2292, issn 0022-3719Article

The classification of close-packed clusters of substitutional point defects in crystalsAHMAD, S. A; CROCKER, A. G; FARIDI, B. A. S et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1983, Vol 48, Num 1, pp 31-39, issn 0141-8610Article

Modèles cinétiques de coagulation de défauts ponctuels dans le corps solideBRILLIANTOV, N; KRAPIVSKIJ, P. L.Fizika tverdogo tela. 1989, Vol 31, Num 2, pp 172-178, issn 0367-3294Article

First-principles calculations of transition metal―solute interactions with point defects in tungstenKONG, Xiang-Shan; XUEBANG WU; YOU, Yu-Wei et al.Acta materialia. 2014, Vol 66, pp 172-183, issn 1359-6454, 12 p.Article

Optical anisotropy in dislocation-free silicon single crystalsTAO CHU; YAMADA, Masayoshi; DONECKER, Joerg et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 327-332, issn 0167-9317, 6 p.Conference Paper

On geometry of point defects and dislocations: the meaning of the third identity of curvature tensorGÜNTHER, H; ZORAWSKI, M.Annalen der Physik (Leipzig). 1985, Vol 42, Num 1, pp 41-46, issn 0003-3804Article

Volume changes and dipole tensors for point defects in crystalsSTONEHAM, A. M.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 25, pp L925-L928, issn 0022-3719Article

DISSOLUTION DES MICRODEFAUTS DANS LE SILICIUM SANS DISLOCATIONSMILEVSKIJ LS; VYSOTSKAYA VV; SIDOROV YU A et al.1980; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1980; NO 1; PP. 153-154; BIBL. 6 REF.Article

Parameters for point-defect diffusion and recombinationLAW, M. E.IEEE transactions on computer-aided design of integrated circuits and systems. 1991, Vol 10, Num 9, pp 1125-1131, issn 0278-0070Article

Theoretical studies of the configuration and association energies of point defect aggregates in alkali halide crystalsBERG, G; FRÖHLICH, F; PIPPEL, A et al.Annalen der Physik (Leipzig). 1986, Vol 43, Num 3-5, pp 161-169, issn 0003-3804Article

Focus dependence of the black-white contrast of small point defect clusters on transmission electron microscope images of crystalline specimensGRUSCHEL, W; WILKENS, M.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp 467-482, issn 0031-8965Article

Temperature and impurity concentration dependences of the efficiency of Frenkel defect accumulation in alkali halide crystalsKOTOMIN, E.Solid state communications. 1984, Vol 51, Num 4, pp 225-229, issn 0038-1098Article

Strain glass in doped Ti50(Ni50―xDx) (D = Co, Cr, Mn) alloys: Implication for the generality of strain glass in defect-containing ferroelastic systemsYUMEI ZHOU; DEZHEN XUE; XIANGDONG DING et al.Acta materialia. 2010, Vol 58, Num 16, pp 5433-5442, issn 1359-6454, 10 p.Article

Multiplication des défauts dans les semiconducteurs lors d'un passage multiple des ondes de chocPOLYANINOV, A. V; YANUSHKEVICH, V. A.Fizika i himiâ obrabotki materialov. 1987, Num 4, pp 58-62, issn 0015-3214Article

Realization of high thermoelectric performance in p-type unfilled ternary skutterudites FeSb2+xTe1―x via band structure modification and significant point defect scatteringGANGJIAN TAN; WEI LIU; HANG CHI et al.Acta materialia. 2013, Vol 61, Num 20, pp 7693-7704, issn 1359-6454, 12 p.Article

The concept of production bias and its possible role in defect accumulation under cascade damage conditionsWOO, C. H; SINGH, B. N.Physica status solidi. B. Basic research. 1990, Vol 159, Num 2, pp 609-616, issn 0370-1972Article

The classification of mixed close-packed clusters of substitutional point defects in crystalsMALIK, A. Q; AKHTAR, J. I; AHMAD, S. A et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 51, Num 4, pp 543-550, issn 0141-8610Article

Point defects and the macroscopic host crystal = Défauts ponctuels et le cristal hôte macroscopiqueSCHOBER, H. R.Physica, B + C. 1985, Vol 131, Num 1-2, pp 27-33, issn 0378-4363Article

Atomistic simulation of point defects at low-index surfaces of noble metalsZHANG, Jian-Min; SONG, Xiang-Lei; ZHANG, Xiao-Jun et al.Surface science. 2006, Vol 600, Num 6, pp 1277-1282, issn 0039-6028, 6 p.Article

ANALYTICAL APPROACH TO THE NUCLEATION AND GROWTH OF DEFECT AGGREGATES UNDER IRRADIATION.PFISTER JC.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 4; PP. 215-217; BIBL. 2 REF.Article

DEFAUTS ETENDUS DANS LES OXYDES DES METAUX DE TRANSITIONMROWEC S.1977; ARCH. HUTN.; POLSKA; DA. 1977; VOL. 22; NO 3; PP. 405-440; ABS. ANGL.; BIBL. 2 P. 1/2Article

AMAS ORDONNES DE DEFAUTS PONCTUELS DANS LES CRISTAUXMOKIEVSKIJ VA; DOLIVO DOBROVOL'SKAYA GI.1979; ZAP. VSESOJUZ. MINERAL. OBSHCHEST.; SUN; DA. 1979; VOL. 113; NO 6; PP. 705-709; BIBL. 3 REF.Article

ELASTIC INTERACTIONS OF POINT DEFECTS IN A SEMI-INFINITE MEDIUMMARADUDIN AA; WALLIS RF.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 91; NO 2-3; PP. 423-439; BIBL. 22 REF.Article

Gold-related EPR centres of low symmetry in siliconHÖHNE, M.Physica status solidi. B. Basic research. 1983, Vol 119, Num 2, pp K117-K121, issn 0370-1972Article

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