Atomistic simulation of point defects at low-index surfaces of noble metalsZHANG, Jian-Min; SONG, Xiang-Lei; ZHANG, Xiao-Jun et al.Surface science. 2006, Vol 600, Num 6, pp 1277-1282, issn 0039-6028, 6 p.Article

Accurate mean field void bias factors for radiation swelling calculations : Plutonium science: modeling and simulation of agingSURH, Michael P; WOLFER, Wilhelm G.Journal of computer-aided materials design. 2007, Vol 14, Num 3, pp 419-424, issn 0928-1045, 6 p.Article

Possible rectified frictionless transport of localized vacancies in solid ⁴HeKWANG-HUA, Chu W.Solid state sciences. 2012, Vol 14, Num 7, pp 894-896, issn 1293-2558, 3 p.Article

Radiation damage and point defectsBULLOUGH, R.Philosophical magazine (2003. Print). 2013, Vol 93, Num 28-30, pp 3760-3771, issn 1478-6435, 12 p.Article

Deformation behaviour induced by point defects near a Cu(0 0 1) surfaceSAID-ETTAOUSSI, M; JIMENEZ-SAEZ, J. C; PEREZ-MARTIN, A. M. C et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 249-253, issn 0169-4332, 5 p.Conference Paper

The dislocation bias : Plutonium science: modeling and simulation of agingWOLFER, W. G.Journal of computer-aided materials design. 2007, Vol 14, Num 3, pp 403-417, issn 0928-1045, 15 p.Article

Charged point defects in semiconductorsSEEBAUER, Edmund G; KRATZER, Meredith C.Materials science & engineering. R, Reports. 2006, Vol 55, Num 3-6, pp 57-149, issn 0927-796X, 93 p.Article

Radiation enhanced diffusion of B in crystalline GeBRUNO, E; MIRABELLA, S; SCAPELLATO, G et al.Thin solid films. 2010, Vol 518, Num 9, pp 2386-2389, issn 0040-6090, 4 p.Conference Paper

Complex atomic-diffusion mechanism in ionic superconductors : The case of the lithium-oxide antifluoriteHAYOUN, Marc; MEYER, Madeleine; DENIEPORT, Aurélie et al.Acta materialia. 2005, Vol 53, Num 10, pp 2867-2874, issn 1359-6454, 8 p.Article

Accumulation de défauts ponctuels en régime d'excitation dans une réaction A+B=0 (modèle linéaire continu)ANTONOV-ROMANOVSKIJ, V. V.Fizika tverdogo tela. 1985, Vol 27, Num 4, pp 1116-1120, issn 0367-3294Article

The enumeration and transformation of dislocation dipoles. I. The dipole strengths of closed and open dislocation arraysNABARRO, F. R. N; BROWN, L. M.Philosophical magazine (2003. Print). 2004, Vol 84, Num 3-5, pp 429-439, issn 1478-6435, 11 p.Conference Paper

Defects properties in plastically deformed silicon studied by positron lifetime measurementsWANG, Z; LEIPNER, H. S; KRAUSE-REHBERG, R et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 358-366, issn 0167-9317, 9 p.Conference Paper

Electron spin resonance probing of fundamental point defects in nanometer-sized silica particlesSTESMANS, A; CLEMER, K; AFANAS'EV, V. V et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155335.1-155335.12, issn 1098-0121Article

Deducing atomic models for point defects in diamond : The relevance of their mechanism of formationBAKER, J. M.Diamond and related materials. 2007, Vol 16, Num 2, pp 216-219, issn 0925-9635, 4 p.Article

First-principles calculations of transition metal―solute interactions with point defects in tungstenKONG, Xiang-Shan; XUEBANG WU; YOU, Yu-Wei et al.Acta materialia. 2014, Vol 66, pp 172-183, issn 1359-6454, 12 p.Article

DISSOLUTION DES MICRODEFAUTS DANS LE SILICIUM SANS DISLOCATIONSMILEVSKIJ LS; VYSOTSKAYA VV; SIDOROV YU A et al.1980; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1980; NO 1; PP. 153-154; BIBL. 6 REF.Article

Mesure de frottement interne = Measurement of internal frictionMARTINEZ-VEGA, Juan-Jorge; RIVIERE, André.Techniques de l'ingénieur. Analyse et caractérisation. 2000, Vol P2, Num P1310, pp p1310.1-p1310.8, issn 1762-8717Article

Anomalous mobility of particles in crystals containing point defectsPETUKOV, B. V; DASGUPTA, G.Crystallography reports. 1993, Vol 38, Num 4, pp 425-428, issn 1063-7745Article

Electronic localization for point defect computationsVAIL, John M.Radiation effects and defects in solids. 2001, Vol 154, Num 3-4, pp 211-215, issn 1042-0150Conference Paper

Equilibrium point defect concentration in a growing silicon crystalTANAHASHI, K; INOUE, N; AKUTSU, N et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 133-137, issn 0167-9317Conference Paper

Imaging defects in metals with a positron re-emission microscopeCANTER, K; XIE, R.Materials chemistry and physics. 1998, Vol 52, Num 3, pp 221-227, issn 0254-0584Article

Solute point defect interactions in crystalsSCHMALZEIED, H; LIDIARD, A. B.Berichte der Bunsen-Gesellschaft. 1997, Vol 101, Num 9, issn 0940-483X, 214 p.Conference Proceedings

Oxygen content of substrates and tunnel oxide quality : an in-line systematic analysisSOTTOCASA, E; ILLUZZI, F; NAHMAD, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 187-191, issn 0921-5107Conference Paper

Relationship between N-doping induced point defects by annealing in ammonia and enhanced thermal stability for anodized titania nanotube arraysLIU, S. J; MA, Q; GAO, F et al.Journal of alloys and compounds. 2012, Vol 543, pp 71-78, issn 0925-8388, 8 p.Article

Electronic and magnetic properties of silicon adsorption on grapheneHU, C. H; ZHENG, Y; ZHANG, Y et al.Solid state communications. 2011, Vol 151, Num 17, pp 1128-1130, issn 0038-1098, 3 p.Article