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ct.\*:("Point defects (vacancies, interstitials, color centers, etc.) and defect clusters")

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Results 1 to 25 of 1609

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Orientation kinetics of the hexavacancies: V6 (B480) in siliconKAMINSKII, A. S.Solid state communications. 2004, Vol 130, Num 11, pp 723-727, issn 0038-1098, 5 p.Article

Observation of dynamic nanostructural and nanochemical changes in ceria-based catalysts during in-situ reductionSHARMA, R; CROZIER, P. A; KANG, Z. C et al.Philosophical magazine (2003. Print). 2004, Vol 84, Num 25-26, pp 2731-2747, issn 1478-6435, 17 p.Conference Paper

Vacancy ordered phases in Al-Cu-Ni as average latticesSUBRAMANIAM, Anandh; RANGANATHAN, S.Journal of non-crystalline solids. 2004, Vol 334-35, pp 114-116, issn 0022-3093, 3 p.Conference Paper

Point defects in Cd0.95Zn0.05TeLI YUJIE; MA GUOLI; JIE WANQI et al.Journal of crystal growth. 2003, Vol 257, Num 3-4, pp 219-224, issn 0022-0248, 6 p.Article

A multi-frequency EPR and ENDOR study of Rh and Ir complexes in alkali and silver halidesCALLENS, F; VRIELINCK, H; MATTHYS, P et al.Radiation effects and defects in solids. 2003, Vol 158, Num 1-6, pp 11-19, issn 1042-0150, 9 p.Conference Paper

Detection of hydrogen trap distribution in steel using a microprint techniqueOHMISAWA, T; UCHIYAMA, S; NAGUMO, M et al.Journal of alloys and compounds. 2003, Vol 356-57, pp 290-294, issn 0925-8388, 5 p.Conference Paper

Defects-induced volume deviations in ZnSeEBE, H; SAKURAI, F; CHEN, Z. Q et al.Journal of crystal growth. 2002, Vol 237-39, pp 1566-1569, issn 0022-0248, 2Conference Paper

Point defects in B2-type intermetallic compoundsKOGACHI, Mineo; HARAGUCHI, Tomohide.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2001, Vol 312, Num 1-2, pp 189-195, issn 0921-5093Article

Native point defects in non-stoichiometric GaAs doped with berylliumGEBAUER, J; ZHAO, R; SPECHT, P et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 812-815, issn 0921-4526Conference Paper

Role of dislocations in aggregation of photoproduced vacancies in crystalsRATNER, M. A.Physica. B, Condensed matter. 2000, Vol 291, Num 1-2, pp 66-74, issn 0921-4526Article

Formation of the 350 nm intrinsic color center in PbWO4 crystalsQISHENG LIN; XIQI FENG; ZHENYONG MAN et al.Physica status solidi. A. Applied research. 2000, Vol 181, Num 1, pp R1-R3, issn 0031-8965Conference Paper

Complex surface treatment by powerful source of multi-component atomic fluxesCHURKIN, I. N; STESHOV, A. G; VOLOSOV, V. I et al.Surface & coatings technology. 1999, Vol 114, Num 1, pp 90-93, issn 0257-8972Article

Observation of vacancies by positron trapping in cerium-doped zirconolitesHADLEY, J. H; HSU, F. H; YONG HU et al.Journal of the American Ceramic Society. 1999, Vol 82, Num 1, pp 203-205, issn 0002-7820Article

Visualization of hydrogen location in pure vanadium using an imaging plate detectorSAITOH, H; MISAWA, T; NOYA, Y et al.Materials transactions - JIM. 1999, Vol 40, Num 7, pp 692-695, issn 0916-1821Article

Investigation of indium-defect pairs in CdTe by PAC spectroscopyREISLÖHNER, U; ACHTZIGER, N; WITTHUHN, W et al.Journal of crystal growth. 1999, Vol 197, Num 3, pp 576-580, issn 0022-0248Conference Paper

NMR study of intrinsic defects in congruent lithium niobateYATSENKO, A; MAKSIMOVA, H; SERGEEV, N et al.Crystal research and technology (1979). 1999, Vol 34, Num 5-6, pp 709-713, issn 0232-1300Article

Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantationOHSHIMA, T; UEDONO, A; ABE, K et al.Applied physics. A, Materials science & processing (Print). 1998, Vol 67, Num 4, pp 407-412, issn 0947-8396Article

Point defect clusters in Pb1-xInxTe single crystals revealed by X-ray diffuse scattering methodZLOMANOV, V. P; CHTCHERBATCHEV, K. D; TKALICH, A. K et al.Journal of solid state chemistry (Print). 1998, Vol 137, Num 1, pp 119-121, issn 0022-4596Article

Athermal dislocational anomalies in microcontact spectra of zinc single crystalsNIKIFORENKO, V. N.Journal of engineering physics and thermophysics. 1997, Vol 70, Num 1, pp 23-26, issn 1062-0125Article

Point defect concentrations and hardening in binary B2 intermetallicsPIKE, L. M; CHANG, Y. A; LIU, C. T et al.Acta materialia. 1997, Vol 45, Num 9, pp 3709-3719, issn 1359-6454Article

Deformation bleaching of coloration in alkali halide crystalsCHANDRA, B. P; VISHWAKARMA, H. L; KHARE, P. K et al.Physica status solidi. B. Basic research. 1997, Vol 204, Num 2, pp 625-633, issn 0370-1972Article

Defect chemistry analysis of the defect structure in Mg-doped LiNbO3 crystalsLIU, J; ZHANG, W; ZHANG, G et al.Physica status solidi. A. Applied research. 1996, Vol 156, Num 2, pp 285-291, issn 0031-8965Article

Impurity atoms responsible for the void formation in quenched pure aluminumSHIMOMURA, Y; MUKOUDA, I; CHEN, Q. R et al.Materials transactions - JIM. 1995, Vol 36, Num 3, pp 413-419, issn 0916-1821Article

Structure and thermodynamic behavior of In3+-2VAg defects in AgBrAUSTIN, J. C; PRICE, K. J; PATNAIK, B. K et al.Radiation effects and defects in solids. 1995, Vol 134, Num 1-4, pp 385-388, issn 1042-0150Conference Paper

Nonlinear analysis of complexities in striations of Czochralski silicon crystalsMIYANO, T; SHINTANI, A.Applied physics letters. 1993, Vol 63, Num 26, pp 3574-3576, issn 0003-6951Article

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