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Results 1 to 25 of 154

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Porous silicon membranes over cavity for efficient local thermal isolation in Si thermal sensorsPAGONIS, D. N; NASSIOPOULOU, A. G; KALTSAS, G et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 8, pp H174-H179, issn 0013-4651Article

Patterning of porous silicon by electron-beam lithographyBORINI, S; ROSSI, A. M; BOARINO, L et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 5, pp G311-G313, issn 0013-4651Article

Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous siliconLUE, H. T; TSENG, C. Y; LUE, J. T et al.Materials chemistry and physics. 2002, Vol 73, Num 2-3, pp 310-313, issn 0254-0584Article

A hygrometer comprising a porous silicon humidity sensor with phase-detection electronicsDAS, Jayoti; DEY, Sagnik; MINHAZ HOSSAIN, Syed et al.IEEE sensors journal. 2003, Vol 3, Num 4, pp 414-420, issn 1530-437X, 7 p.Article

Metastable stage in porous silicon formation: the role of H-terminated low index facesLEWERENZ, H. J; JAKUBOWICZ, J; JUNGBLUT, H et al.Electrochemistry communications. 2004, Vol 6, Num 8, pp 838-842, issn 1388-2481, 5 p.Article

An FTIR study of porous silicon layers exposed to humid air with and without pyridine vapors at room temperatureMATTEI, G; VALENTINI, V; YAKOVLEV, V. A et al.Surface science. 2002, Vol 502-03, pp 58-62, issn 0039-6028Conference Paper

Control of the crystallite size and passivation of defects in porous silicon by a novel methodSHARMA, S. N; BANERJEE, Ratnabali; DAS, Debabrata et al.Applied surface science. 2001, Vol 182, Num 3-4, pp 333-337, issn 0169-4332Conference Paper

Epitaxial growth on porous GaAs substratesGRYM, Jan; NOHAVICA, Dušan; GLADKOV, Petar et al.Comptes rendus. Chimie. 2013, Vol 16, Num 1, pp 59-64, issn 1631-0748, 6 p.Article

Investigations of the optical absorption spectra of porous silicon layers on the Silicon backing by the nondestructive photoacoustic methodMALINSKI, Mirosław; CHROBAK, Lukasz; BYCHTO, Leszek et al.Thin solid films. 2010, Vol 519, Num 1, pp 394-398, issn 0040-6090, 5 p.Article

In situ measurement of the diameter of nanopores in silicon during anodization in hydrofluoric acid solutionTANAKA, H; SHIMADA, A; KINOSHITA, A et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 6, pp C439-C445, issn 0013-4651Article

Back-side etching: A tool for making morphology gradients in porous siliconKARLSSON, L. M; TENGVALL, P; LUNDSTRÖM, I et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 12, pp C648-C652, issn 0013-4651Article

Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACESHAOYUAN LI; WENHUI MA; YANG ZHOU et al.Journal of solid state chemistry (Print). 2014, Vol 213, pp 242-249, issn 0022-4596, 8 p.Article

Functionalization of a porous silicon impedance sensorLIYANAGE, C. N; BLACKWOOD, D. J.Thin solid films. 2014, Vol 550, pp 677-682, issn 0040-6090, 6 p.Article

Sputtered Al-doped ZnO transparent conducting thin films suitable for silicon solar cellsBEN AYADI, Z; MAHDHI, H; DJESSAS, K et al.Thin solid films. 2014, Vol 553, pp 123-126, issn 0040-6090, 4 p.Conference Paper

A new bottom-up methodology to produce silicon layers with a closed porosity nanostructure and reduced refractive indexGODINHO, V; CABALLERO-HERNANDEZ, J; JAMON, D et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 27, issn 0957-4484, 275604.1-275604.10Article

Optical and structural characterization of tungsten oxide electrodeposited on nanostructured porous silicon: Effect of annealing atmosphere and temperatureMENDOZA-AGÜERO, N; AGARWAL, V.Journal of alloys and compounds. 2013, Vol 581, pp 596-601, issn 0925-8388, 6 p.Article

Photoluminescence, time-resolved emission and photoresponse of plasma-modified porous silicon thin filmsBENYAHIA, Be; GUERBOUS, L; GABOUZE, N et al.Thin solid films. 2013, Vol 540, pp 155-161, issn 0040-6090, 7 p.Article

Supercritical fluid deposition of copper into mesoporous siliconLIANHUA JIN; KONDOH, Eiichi; OYA, Toshifumi et al.Thin solid films. 2013, Vol 545, pp 357-360, issn 0040-6090, 4 p.Article

p-DSSCs with BiOCI and BiOBr semiconductor and polybromide electrolyteLUZ, Andreas; CONRADT, Jonas; WOLFF, Michael et al.Solid state sciences. 2013, Vol 19, pp 172-177, issn 1293-2558, 6 p.Article

Insights into Desorption Ionization on Silicon (DIOS)JIN LI; LIPSON, R. H.Journal of physical chemistry. C. 2013, Vol 117, Num 51, pp 27114-27119, issn 1932-7447, 6 p.Article

Porous silicon nanowires for lithium rechargeable batteriesYOO, Jung-Keun; JONGSOON KIM; HOJUN LEE et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 42, issn 0957-4484, 424008.1-424008.7Article

Effect of temperature in electrochemical texturising of multi-crystalline silicon in KOH solutionDINH CONG TRUONG; ABBURI, Madhu; NGUYEN TRAN THUAT et al.International journal of nanotechnology. 2013, Vol 10, Num 3-4, pp 288-295, issn 1475-7435, 8 p.Conference Paper

Fabrication and optical characterization of p-type single macro-porous silicon for detection of nano-sized functionalized superparamagnetic beadsPIL JU KO; ISHIKAWA, Ryousuke; TAKAMURA, Tsukasa et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2327-2330, issn 0022-3093, 4 p.Conference Paper

Strong white light emission from a processed porous silicon and its photoluminescence mechanismKARACALI, T; CICEK, K.Journal of luminescence. 2011, Vol 131, Num 10, pp 2100-2105, issn 0022-2313, 6 p.Article

An abrupt switch between the two photoluminescence bands within alkylated silicon nanocrystalsCOXON, Paul R; QI WANG; YIMIN CHAO et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 49, issn 0022-3727, 495301.1-495301.6Article

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