Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET'sHEREMANS, P; BELLENS, R; GROESENEKEN, G et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2194-2209, issn 0018-9383Article

Germanium lasers in the range from far-infrared to millimetre wavesKOMIYAMA, S; KURODA, S; HOSAKO, I et al.Optical and quantum electronics. 1991, Vol 23, Num 2, pp S133-S162, issn 0306-8919Article

Hot carrier reliability of HfSiON NMOSFETs with poly and TiN metal gateSIM, J. H; LEE, B. H; CHOI, R et al.DRC : Device research conference. 2004, pp 99-100, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Suppression of hot-carrier effects in submicrometer CMOS technologyMIN-LIANG CHEN; CHUNG-WAI LEUNG; COCHRAN, W. T et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2210-2220, issn 0018-9383Article

Generalized dynamic-disorder transport rule with application to the study of temporal correlation effectsDRUGER, S. D; RATNER, M. A.Physical review. B, Condensed matter. 1988, Vol 38, Num 17, pp 12589-12599, issn 0163-1829Article

Numerical modeling of hot carriers in submicrometer silico BJT'sHSIN-SHIUNG OU; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1533-1539, issn 0018-9383Article

A poly-framed LDD sub-half-micrometer CMOS technologyPFEISTER, J. R; CRAIN, N; JUNG-HUI LIN et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 529-531, issn 0741-3106, 3 p.Article

RF HCI testing methodology and lifetime model establishmentWEE LOON NG; TOLEDO, Nikholas.IEEE international reliability physics symposium. 2004, pp 412-414, isbn 0-7803-8315-X, 1Vol, 3 p.Conference Paper

Reliability evaluation of gilbert cell mixer based on a hot-carrier stressed device degradation modelLIN, Wei-Cheng; DU, Long-Jei; KING, Ya-Chin et al.IEEE radio frequency integrated circuits symposium. 2004, pp 387-390, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Hot-carrier-induced degradation on 0.1μm SOI CMOSFETYEH, Wen-Kuan; WANG, Wen-Han; FANG, Yean-Kuen et al.IEEE International SOI conference. 2002, pp 107-108, isbn 0-7803-7439-8, 2 p.Conference Paper

Simulation of hot-carrier reliability in MOS integrated circuitsWONG, H; POON, M. C.International conference on microelectronic. 1997, pp 625-628, isbn 0-7803-3664-X, 2VolConference Paper

Electrons et phonons hors d'équilibre dans les semiconducteurs de dimensions finies dans les champs électriquesBOCHKOV, V. S; GREDESKUL, T. S; GUREVICH, YU. G et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 3, pp 396-401, issn 0015-3222Article

New insights on the hot-carrier characteristics of 55nm PD SOI MOSFETsIOANNOU, D. P; ZHAO, E; COOPER, S et al.IEEE international SOI conference. 2004, pp 205-206, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

HOTMOS : A 2-D MOS device simulator for hot carrier effectsSUBBARAMAN, S; SHARMA, D. K; VASI, J et al.SPIE proceedings series. 1998, pp 1064-1067, isbn 0-8194-2756-X, 2VolConference Paper

Hot-carrier effects in polysilicon emitter vertical PNP and NPN transistorsSPARKS, D. R; HANKINS, K. T; LEVITAN, A. J et al.Microelectronics and reliability. 1993, Vol 33, Num 14, pp 2087-2092, issn 0026-2714Article

Absorption non linéaire du rayonnement IR dans le germanium de type p aux basses températuresVASETSKIJ, V. M; POROSHIN, V. N; SARBEJ, O. G et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1610-1613, issn 0015-3222Article

Effect of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistorsCHOI, J. Y; KO, P. K; HU, C et al.Applied physics letters. 1987, Vol 50, Num 17, pp 1188-1190, issn 0003-6951Article

Hot-carrier drifts in submicrometer p-channel MOSFET'sWEBER, W; LAU, F.IEEE electron device letters. 1987, Vol 8, Num 5, pp 208-210, issn 0741-3106Article

Reliability evaluation and redesign of LNALIN, Wei-Cheng; DU, Long-Jei; KING, Ya-Chin et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1727-1732, issn 0026-2714, 6 p.Conference Paper

Hot-carrier thermalization induced self-phase modulation in semiconductor traveling wave amplifiersDELFYETT, P. J; SILBERBERG, Y; ALPHONSE, G. A et al.Applied physics letters. 1991, Vol 59, Num 1, pp 10-12, issn 0003-6951Article

Exact formula for energy-independent recombination heatingLEO, K.Physica status solidi. B. Basic research. 1988, Vol 145, Num 1, pp K31-K33, issn 0370-1972Article

Photon-assisted avalanche spreading in reach-through photodiodesLACAITA, A; COVA, S; SPINELLI, A et al.Applied physics letters. 1993, Vol 62, Num 6, pp 606-608, issn 0003-6951Article

Process dependence of interface state generation due to irradiation and hot carrier stress in rapid thermally nitrited thin gate oxidesJOSHI, A. B; LO, G. Q; KWONG, D. K et al.Electronics Letters. 1990, Vol 26, Num 16, pp 1248-1249, issn 0013-5194Article

Modélisation des phénomènes de transport des porteurs chauds du silicium en champs E/H par la méthode de Monte CarloDODIN, E. P; KRASIL'NIK, Z. F.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 4, pp 585-591, issn 0015-3222Article

Relaxation effects in NMOS transistors after hot-carrier stressingDOYLE, B. S; BOURCERIE, M; MARCHETAUX, J.-C et al.IEEE electron device letters. 1987, Vol 8, Num 5, pp 234-236, issn 0741-3106Article