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Choas and broadband noise in extrinsic photoconductorsTEITSWORTH, S. W; WESTERVELT, R. M.Physical review letters. 1984, Vol 53, Num 27, pp 2587-2590, issn 0031-9007Article

Hot-carrier effects in non-radiative multiphonon capture by deep traps in semiconductorsPASSLER, R.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 33, pp 5957-5974, issn 0022-3719Article

Biréfringence naturelle liée aux porteurs libres dans les semiconducteurs à plusieurs vallées de symétrie cubiqueTSITSISHVILI, E. G.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 7, pp 1308-1310, issn 0015-3222Article

Lysotypie de Vibrio NAG isolés en URSSGANIN, V. S; BYSTRYJ, N. F; URBANOVICH, L. YA et al.Žurnal mikrobiologii, epidemiologii i immunobiologii. 1983, Num 9, pp 89-92Article

Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor depositionSCHWARTZ, P. V; STURM, J. C.Applied physics letters. 1990, Vol 57, Num 19, pp 2004-2006, issn 0003-6951, 3 p.Article

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Optical detection of cyclotron resonance for characterization of recombination processes in semiconductorsGODLEWSKI, M; CHEN, W. M; MONEMAR, B et al.Critical reviews in solid state and materials sciences. 1994, Vol 19, Num 4, pp 241-301, issn 1040-8436Article

Minority-carrier lifetime mapping in silicon using a microprocessor-controlled flying-spot scannerNORDLANDER, E; DRUGGE, B; TAPIA, M et al.Journal of physics. E. Scientific instruments. 1985, Vol 18, Num 1, pp 65-68, issn 0022-3735Article

Effect of high oxygen doping on the minority carrier lifetime in heat-treated silicon crystalsGLINCHUK, K. D; LITOVCHENKO, N. M; SALNIC, Z. A et al.Crystal research and technology (1979). 1985, Vol 20, Num 4, pp 485-489, issn 0232-1300Article

New method of measuring relaxation times in semiconductorsMUKHERJEE, P; SHEIK-BAHAEI, M; KWOK, H. S et al.Applied physics letters. 1985, Vol 46, Num 8, pp 770-772, issn 0003-6951Article

Main and higher mode absorption dependencies of open semiconductor plasma waveguide on the percentage of heavy holesBUBNELIS, A; NICKELSON, L.Applied physics. A, Materials science & processing (Print). 2012, Vol 109, Num 4, pp 949-953, issn 0947-8396, 5 p.Conference Paper

Pump-and-probe terahertz method to investigate YBa₂Cu₃O_7-δ thin filmsWALD, Hagen; SEIDEL, Paul; TONOUCHI, Masayoshi et al.Physica. C. Superconductivity and its applications. 2002, Vol 367, Num 1-4, pp 308-316Article

Influence of non-stoichiometry on the recombination activity of dislocations in undoped semi-insulating GaAs crystalsGLINCHUK, K. D; PROKHOROVICH, A. V.Crystal research and technology (1979). 1995, Vol 30, Num 2, pp 201-204, issn 0232-1300Article

Modelling of the accumulation region for a high-low junction at equilibriumDE, S. S; GHOSH, A. K.Physica status solidi. A. Applied research. 1991, Vol 123, Num 1, pp K19-K23, issn 0031-8965Article

A simple circuit to aid direct measurement of capture cross sections of deep level impuritiesMOHAN CHANDRA, M; KUMAR, V.Journal of physics. E. Scientific instruments. 1984, Vol 17, Num 11, pp 949-951, issn 0022-3735Article

Contact less measurement of photoinduced carrier lifetime and injection level in silicon wafer using additional eddy currentMAEKAWA, T; INOUE, S; USAMI, A et al.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 968-974, issn 0021-4922Article

Investigation of ferromagnetic properties of LSMO nanolayers by laser modulated reflectance probePENCHEVA, V; ALIPIEVA, E; PENCHEV, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7747, issn 0277-786X, isbn 978-0-8194-8237-2, 774709.1-774709.7Conference Paper