Dielectric functions and optical parameters of heavily doped and/or highly excited Si:PBASTA, M; KUZNICKI, Z. T.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7725, issn 0277-786X, isbn 978-0-8194-8198-6, 1Vol, 77251J.1-77251J.9Conference Paper

Des courants de protons = Proton currentsFILLAUX, Francois.Pour la science. 2003, Num 304, pp 54-57, issn 0153-4092, 4 p.Article

Absorption de la lumière due aux impuretés par les porteurs libres dans les semiconducteurs sans bande inerditeLENTSOV, A. A; YAKOVLEV, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 614-617, issn 0015-3222Article

Enhancement of electron capture efficiency in MQW structuresSAFONOV, Ivan M; KLYMENKO, Mykhailo V; SUKHOIVANOV, Igor A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61841K.1-61841K.8, issn 0277-786X, isbn 0-8194-6240-3, 1VolConference Paper

Free-carrier absorption in semiconducting quantum well wiresKUBAKADDI, S. S; MULIMANI, B. G.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 36, pp 6647-6652, issn 0022-3719Article

Screening of polar interaction in quasi-two-dimensional semiconductor microstructuresDAS SARMA, S; MASON, B. A.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5536-5538, issn 0163-1829Article

Colour control and selectivity in TiAlN solar-thermal absorbersSHUXI ZHAO; DECHUN ZHU; RIBBING, Carl-G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8168, issn 0277-786X, isbn 978-0-8194-8794-0, 81680G.1-81680G.9Conference Paper

Free-carrier absorption modulation in silicon nanocrystal slot waveguidesCREAZZO, Tim; REDDING, Brandon; MARCHENA, Elton et al.Optics letters. 2010, Vol 35, Num 21, pp 3691-3693, issn 0146-9592, 3 p.Article

Coherent boson statesORAEVSKII, A. N.Quantum electronics (Woodbury). 1997, Vol 27, Num 12, pp 1094-1103, issn 1063-7818Article

Influence of doping on the dielectric function in narrow-gap semiconductorsQIAN DINGRONG; LIU, L; SZUSZKIEWICZ, W et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5540-5549, issn 0163-1829Article

Electronic Raman scattering in heavily doped p-type germaniumWAGNER, J; CARDONA, M.Physical review. B, Condensed matter. 1985, Vol 32, Num 12, pp 8071-8077, issn 0163-1829Article

Biréfringence naturelle liée aux porteurs libres dans les semiconducteurs à plusieurs vallées de symétrie cubiqueTSITSISHVILI, E. G.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 7, pp 1308-1310, issn 0015-3222Article

A CMOS-based light modulator for contactless data transfer: theory and conceptSERB, Alexandru; NIKOLIC, Konstantin; CONSTANDINOU, Timothy G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7943, issn 0277-786X, isbn 978-0-8194-8480-2, 794317.1-794317.12Conference Paper

Enhanced electro-optical effect in siliconCAIHUA CHEN; BINGLIN MIAO; PRATHER, Dennis W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64770Y.1-64770Y.8, issn 0277-786X, isbn 978-0-8194-6590-0, 1VolConference Paper

Photoluminescence characterization of high-purity synthesized diamondHORIUCHI, K; NAKAMURA, K; YAMASHITA, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 11B, pp L1505-L1507, issn 0021-4922, 2Article

Carrier density fluctuations in single injection solid state diode with thermal free carriersKUMAR, G; SHARMA, Y. K; NAGAYACH, A. V et al.Indian journal of pure & applied physics. 1990, Vol 28, Num 11, pp 659-660, issn 0019-5596Article

Optical absorption by electron plasma in multivalley polar semiconductors with impuritiesGOETTIG, S.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 25, pp 4463-4478, issn 0022-3719Article

10 Gb/s broadband silicon electro-optic absorption modulatorELSHAARI, Ali W; PREBLE, Stefan F.Optics communications. 2010, Vol 283, Num 14, pp 2829-2834, issn 0030-4018, 6 p.Article

Free-carrier absorption in semiconductor lasersHAUG, A.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 373-378, issn 0268-1242Article

Formation of domain structure in ferroelectric films with free charge carriersDARINSKII, B. M; LAZAREV, A. P; SIDORKIN, A. S et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 423-424, issn 0038-5638Article

Recombination-induced heating of free carriers in a semiconductorBIMBERG, D; MYCIELSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5490-5493, issn 0163-1829Article

Choas and broadband noise in extrinsic photoconductorsTEITSWORTH, S. W; WESTERVELT, R. M.Physical review letters. 1984, Vol 53, Num 27, pp 2587-2590, issn 0031-9007Article

Effect of multiphoton absorption and free carriers in slow-light photonic crystal waveguidesHUSKO, Chad; COLMAN, Pierre; COMBRIE, Sylvain et al.Optics letters. 2011, Vol 36, Num 12, pp 2239-2241, issn 0146-9592, 3 p.Article

High temperature (T > 300 K) light emitting diodes for 8-12 μm spectral rangeMALYUTENKO, V; MELNIK, A; MALYUTENKO, O et al.Infrared physics & technology. 2000, Vol 41, Num 6, pp 373-378, issn 1350-4495Article

Scattering of excitons by free carriers in narrow and wide quantum wells in the presence of a transverse electric fieldTONG SAN KOH; YUAN PING FENG; SPECTOR, H. N et al.Solid state communications. 1997, Vol 104, Num 7, pp 407-412, issn 0038-1098Article